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IRF9Z24NSPBF

IRF9Z24NSPBF
Mfr. #:
IRF9Z24NSPBF
Produttore:
Infineon / IR
Descrizione:
MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF9Z24NSPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF9Z24NSPBF DatasheetIRF9Z24NSPBF Datasheet (P4-P6)IRF9Z24NSPBF Datasheet (P7-P9)IRF9Z24NSPBF Datasheet (P10-P11)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale P
Vds - Tensione di rottura Drain-Source:
55 V
Id - Corrente di scarico continua:
12 A
Rds On - Resistenza Drain-Source:
175 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
12.7 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
45 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
2.3 mm
Lunghezza:
6.5 mm
Tipo di transistor:
1 P-Channel
Tipo:
MOSFET di potenza HEXFET
Larghezza:
6.22 mm
Marca:
Infineon / IR
Tempo di caduta:
37 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
55 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
23 ns
Tempo di ritardo di accensione tipico:
13 ns
Parte # Alias:
SP001551706
Unità di peso:
0.139332 oz
Tags
IRF9Z24NS, IRF9Z24N, IRF9Z24, IRF9Z2, IRF9Z, IRF9, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
***ical
Trans MOSFET P-CH 55V 12A 3-Pin(2+Tab) D2PAK
***ied Electronics & Automation
MOSFET, P-CHANNEL, -55V, -12A, 175 MOHM, 12.7 NC QG, D2-PAK
***Components
MOSFET P-Channel 55V 12A D2PAK
***i-Key
MOSFET P-CH 55V 12A D2PAK
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-12A; On Resistance, Rds(on):175mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
***nell
MOSFET, P, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:55V; Current, Id Cont:12A; Resistance, Rds On:0.175ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:-4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:48A; External Depth:15.49mm; External Length / Height:4.69mm; Power Dissipation:45W; Power Dissipation on 1 Sq. PCB:3.8W; Power, Pd:45W; SMD Marking:F9Z24NS; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:55V; Width, External:10.54mm
***ment14 APAC
MOSFET, P, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:55V; On Resistance Rds(on):175mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:45W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:-12A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:48A; SMD Marking:F9Z24NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descrizione Azione Prezzo
IRF9Z24NSPBF
DISTI # IRF9Z24NSPBF-ND		Infineon Technologies AGMOSFET P-CH 55V 12A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRF9Z24NSPBF
    DISTI # IRF9Z24NSPBF    		Infineon Technologies AGTrans MOSFET P-CH 55V 12A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: IRF9Z24NSPBF)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 27
      IRF9Z24NSPBF
      DISTI # 97K2242      		Infineon Technologies AGMOSFET Transistor, P Channel, 12 A, 55 V, 175 mohm, -10 V, -4 V RoHS Compliant: Yes0
        IRF9Z24NSPBFInternational RectifierPower Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		26
        • 1000:$0.6100
        • 500:$0.6400
        • 100:$0.6600
        • 25:$0.6900
        • 1:$0.7500
        IRF9Z24NSPBF
        DISTI # 942-IRF9Z24NSPBF        		Infineon Technologies AGMOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
        RoHS: Compliant        		0
          IRF9Z24NSPBFInternational Rectifier 89
          • 2:$2.6880
          • 11:$1.7472
          • 30:$1.3440
          IRF9Z24NSPBFInternational Rectifier 71
          • 11:$1.8000
          • 4:$2.4000
          • 1:$3.6000
          IRF9Z24NSPBF
          DISTI # 9103180          		Infineon Technologies AGMOSFET, P, D2-PAK
          RoHS: Compliant          		0
          • 1:$2.4300
          • 10:$2.1700
          • 100:$1.6900
          • 500:$1.4000
          Immagine Parte # Descrizione
          IRF9Z24PBF

          Mfr.#: IRF9Z24PBF

          OMO.#: OMO-IRF9Z24PBF

          		 MOSFET P-CH -60V HEXFET MOSFET
          IRF9Z24SPBF

          Mfr.#: IRF9Z24SPBF

          OMO.#: OMO-IRF9Z24SPBF-VISHAY

          		 MOSFET P-CH 60V 11A D2PAK
          IRF9Z24NPBF

          Mfr.#: IRF9Z24NPBF

          OMO.#: OMO-IRF9Z24NPBF-INFINEON-TECHNOLOGIES

          		 MOSFET P-CH 55V 12A TO-220AB
          IRF9Z24NPBF , 2SK1060-Z-

          Mfr.#: IRF9Z24NPBF , 2SK1060-Z-

          OMO.#: OMO-IRF9Z24NPBF-2SK1060-Z--1190

          		 Nuovo e originale
          IRF9Z24NPBF,F9Z24N,IRF9Z

          Mfr.#: IRF9Z24NPBF,F9Z24N,IRF9Z

          OMO.#: OMO-IRF9Z24NPBF-F9Z24N-IRF9Z-1190

          		 Nuovo e originale
          IRF9Z24NPBF-MEX

          Mfr.#: IRF9Z24NPBF-MEX

          OMO.#: OMO-IRF9Z24NPBF-MEX-1190

          		 Nuovo e originale
          IRF9Z24NS

          Mfr.#: IRF9Z24NS

          OMO.#: OMO-IRF9Z24NS-INFINEON-TECHNOLOGIES

          		 MOSFET P-CH 55V 12A D2PAK
          IRF9Z24NSTRR

          Mfr.#: IRF9Z24NSTRR

          OMO.#: OMO-IRF9Z24NSTRR-INFINEON-TECHNOLOGIES

          		 MOSFET P-CH 55V 12A D2PAK
          IRF9Z24S

          Mfr.#: IRF9Z24S

          OMO.#: OMO-IRF9Z24S-VISHAY

          		 MOSFET P-CH 60V 11A D2PAK
          IRF9Z24

          Mfr.#: IRF9Z24

          OMO.#: OMO-IRF9Z24-VISHAY

          		 MOSFET P-Chan 60V 11 Amp
          Disponibilità
          Azione:
          Available
          Su ordine:
          1500
          Inserisci la quantità:
          Il prezzo attuale di IRF9Z24NSPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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