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IRF6709S2TRPBF

IRF6709S2TRPBF
Mfr. #:
IRF6709S2TRPBF
Produttore:
Infineon / IR
Descrizione:
MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF6709S2TRPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6709S2TRPBF DatasheetIRF6709S2TRPBF Datasheet (P4-P6)IRF6709S2TRPBF Datasheet (P7-P9)IRF6709S2TRPBF Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
DirectFET-S1
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
25 V
Id - Corrente di scarico continua:
39 A
Rds On - Resistenza Drain-Source:
10.1 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
8.1 nC
Pd - Dissipazione di potenza:
21 W
Configurazione:
Separare
Confezione:
Bobina
Altezza:
0.74 mm
Lunghezza:
4.85 mm
Tipo di transistor:
1 N-Channel
Larghezza:
3.95 mm
Marca:
Infineon / IR
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
4800
sottocategoria:
MOSFET
Parte # Alias:
SP001530266
Tags
IRF670, IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
N Channel, MOSFET, 25V, 12A, DirectFET S1; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
IRF6709S2TRPBF
DISTI # IRF6709S2TRPBF-ND		Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET-S1
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6709S2TRPBF
    DISTI # 70019594    		Infineon Technologies AGMOSFET,25V,12.000A,DIRECTFET-LV
    RoHS: Compliant    		0
    • 4800:$1.0400
    IRF6709S2TRPBF
    DISTI # 942-IRF6709S2TRPBF    		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
    RoHS: Compliant    		0
      Immagine Parte # Descrizione
      IRF6709S2TRPBF

      Mfr.#: IRF6709S2TRPBF

      OMO.#: OMO-IRF6709S2TRPBF

      		 MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
      IRF6709S2TR1PBF

      Mfr.#: IRF6709S2TR1PBF

      OMO.#: OMO-IRF6709S2TR1PBF

      		 MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
      IRF6709S2TR1PBF

      Mfr.#: IRF6709S2TR1PBF

      OMO.#: OMO-IRF6709S2TR1PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 25V 12A DIRECTFET-S1
      IRF6709S2TRPBF

      Mfr.#: IRF6709S2TRPBF

      OMO.#: OMO-IRF6709S2TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
      Disponibilità
      Azione:
      Available
      Su ordine:
      1000
      Inserisci la quantità:
      Il prezzo attuale di IRF6709S2TRPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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