GS8161E36DGD-375I

GS8161E36DGD-375I
Mfr. #:
GS8161E36DGD-375I
Produttore:
GSI Technology
Descrizione:
SRAM 2.5 or 3.3V 512K x 36 18M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS8161E36DGD-375I Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS8161E36DGD-375I maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologia GSI
Categoria di prodotto:
SRAM
RoHS:
Y
Dimensione della memoria:
18 Mbit
Organizzazione:
512 k x 36
Orario di accesso:
4.2 ns
Frequenza massima di clock:
375 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
3.6 V
Tensione di alimentazione - Min:
2.3 V
Corrente di alimentazione - Max:
290 mA, 370 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
BGA-165
Confezione:
Vassoio
Tipo di memoria:
SDR
Serie:
GS8161E36DGD
Tipo:
Conduttura DCD/Flusso passante
Marca:
Tecnologia GSI
Sensibile all'umidità:
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
36
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
SyncBurst
Tags
GS8161E36DGD-3, GS8161E36DGD, GS8161E36DG, GS8161E36, GS8161E3, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 36 4.2ns/2.5ns 165-Pin FBGA
***ure Electronics
CY7C1412KV18 Series 1.9V 18 Mb (1 M x 18) 250 MHz Surface Mount SRAM - FBGA-165
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e1 Surface Mount CY7C1312 Tray ic memory 250MHz 450ps 15mm 560mA
*** Stop Electro
QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165
***ponent Stockers USA
1M X 18 QDR SRAM 0.45 ns PBGA165
***ress Semiconductor SCT
Synchronous SRAM, BGA-165, RoHS
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 2M x 9-Bit 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1911 Tray ic memory 250MHz 450ps 15mm 430mA
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
QDR SRAM, 2MX9, 0.45NS, CMOS, PB
***ical
SRAM Chip Sync Dual 1.8V 18M-bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
Synchronous SRAM, QDR-II, 18432 Kb Density, 250 MHz Frequency, BGA-165
***-Wing Technology
e0 Surface Mount CY7C1312 Tray ic memory 250MHz 450ps 15mm 560mA
***ponent Stockers USA
1M X 18 QDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
SRAM Chip Sync Dual 1.8V 18M-bit 1M x 18 0.45ns 165-Pin LFBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***ark
18Mb, Quad (Burst Of 2), Sync Sram, 1M X 18, 165 Ball Fbga (13X15 Mm), Rohs |Integrated Silicon Solution (Issi) IS61QDB21M18A-250B4LI
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 165-Pin FBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***ark
18Mb, Quad (Burst Of 2), Sync Sram, 1M X 18, 165 Ball Fbga (15X17 Mm), Rohs |Integrated Silicon Solution (Issi) IS61QDB21M18A-250M3L
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Immagine Parte # Descrizione
GS8161E32DD-250V

Mfr.#: GS8161E32DD-250V

OMO.#: OMO-GS8161E32DD-250V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DD-200I

Mfr.#: GS8161E36DD-200I

OMO.#: OMO-GS8161E36DD-200I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGD-400I

Mfr.#: GS8161E36DGD-400I

OMO.#: OMO-GS8161E36DGD-400I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGD-150V

Mfr.#: GS8161E36DGD-150V

OMO.#: OMO-GS8161E36DGD-150V

SRAM 1.8/2.5V 512K x 36 18M
GS8161E36DD-200

Mfr.#: GS8161E36DD-200

OMO.#: OMO-GS8161E36DD-200

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E32DGT-250

Mfr.#: GS8161E32DGT-250

OMO.#: OMO-GS8161E32DGT-250

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-333

Mfr.#: GS8161E32DD-333

OMO.#: OMO-GS8161E32DD-333

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGT-250IV

Mfr.#: GS8161E32DGT-250IV

OMO.#: OMO-GS8161E32DGT-250IV

SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DGT-400

Mfr.#: GS8161E32DGT-400

OMO.#: OMO-GS8161E32DGT-400

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E36DD-400I

Mfr.#: GS8161E36DD-400I

OMO.#: OMO-GS8161E36DD-400I

SRAM 2.5 or 3.3V 512K x 36 18M
Disponibilità
Azione:
Available
Su ordine:
1000
Inserisci la quantità:
Il prezzo attuale di GS8161E36DGD-375I è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
36
24,43 USD
879,48 USD
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