SIR870DP-T1-GE3

Mfr. #:: SIR870DP-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET N-CHANNEL 100-V(D-S)
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIR870DP-T1-GE3 Scheda dati
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HTML Datasheet:: SIR870DP-T1-GE3 Datasheet SIR870DP-T1-GE3 Datasheet (P4-P6)SIR870DP-T1-GE3 Datasheet (P7-P9)SIR870DP-T1-GE3 Datasheet (P10-P12)SIR870DP-T1-GE3 Datasheet (P13)
ECAD Model:
Maggiori informazioni:: SIR870DP-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: E

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: PowerPAK-SO-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 100 V

Id - Corrente di scarico continua:: 60 A

Rds On - Resistenza Drain-Source:: 5 mOhms

Vgs th - Tensione di soglia gate-source:: 1.2 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 84 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 104 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: TrenchFET, PowerPAK

Confezione:: Bobina

Serie:: SIGNORE

Tipo di transistor:: 1 N-Channel

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 80 S

Tempo di caduta:: 8 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 10 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 38 ns

Tempo di ritardo di accensione tipico:: 12 ns

Parte # Alias:: SIR870DP-GE3

Unità di peso:: 0.017870 oz

Tags: SIR870, SIR87, SIR8, SIR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIR870DP-T1-GE3 Descrizione

***ark: MOSFET, N CH, DI, 100V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous

***ure Electronics: Single N-Channel 100 V 0.006 Ohm Medium Voltage ThunderFET® Mosfet POWERPAK-SO-8

***nell: MOSFET, N CH, DI, 100V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

SIR870DP-T1-GE3 Maggiori informazioni

SiR870DP 100V Power MOSFETs: Vishay Siliconix SiR870DP 100V N-channel TrenchFET® Power MOSFETs use ThunderFET® technology to provide the industry's lowest on-resistance of 7.8mΩ at 4.5V. The Vishay Siliconix SiR870DP also offers a very low on-resistance of 6mΩ at 10V. These Vishay Siliconix ThunderFET devices also provide an industry-low 208 mΩ-nC figure of merit (FOM) at 4.5V. The low on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. SiR870DP 100V TrenchFET Power MOSFETs are designed for higher frequency and switching applications.Learn More

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

ThunderFET® Power MOSFETs: Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIR870DP-T1-GE3 DISTI # V36:1790_09216041	Vishay Intertechnologies	Trans MOSFET N-CH 100V 22.8A 8-Pin PowerPAK SO T/R RoHS: Compliant	0	3000000:$1.3250 1500000:$1.3260 300000:$1.3480 30000:$1.3740 3000:$1.3780
SIR870DP-T1-GE3 DISTI # V72:2272_09216041	Vishay Intertechnologies	Trans MOSFET N-CH 100V 22.8A 8-Pin PowerPAK SO T/R RoHS: Compliant	0
SIR870DP-T1-GE3 DISTI # SIR870DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	6000:$1.1057 3000:$1.1482
SIR870DP-T1-GE3 DISTI # SIR870DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.2702 500:$1.5330 100:$1.8659 10:$2.3210 1:$2.5800
SIR870DP-T1-GE3 DISTI # SIR870DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.2702 500:$1.5330 100:$1.8659 10:$2.3210 1:$2.5800
SIR870DP-T1-GE3 DISTI # SIR870DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 22.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR870DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$1.0379 18000:$1.0669 12000:$1.0969 6000:$1.1439 3000:$1.1789
SIR870DP-T1-GE3 DISTI # 94T2659	Vishay Intertechnologies	MOSFET, N CHANNEL, 100V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes	0	1000:$1.5100 500:$1.7500 250:$2.0100 100:$2.2600 50:$2.5000 25:$2.7000 1:$2.8400
SIR870DP-T1-GE3 DISTI # 65T1670	Vishay Intertechnologies	MOSFET, N CHANNEL, 100V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes	0	10000:$1.0200 6000:$1.0600 4000:$1.1000 2000:$1.2200 1000:$1.2800 1:$1.3600
SIR870DP-T1-GE3 DISTI # 781-SIR870DP-T1-GE3	Vishay Intertechnologies	MOSFET N-CHANNEL 100-V(D-S) RoHS: Compliant	0	1:$2.5100 10:$2.0900 100:$1.6200 500:$1.4100 1000:$1.1700 3000:$1.0900 6000:$1.0500
SIR870DP-T1-GE3.	Vishay Intertechnologies	MOSFET N-CHANNEL 100-V(D-S) RoHS: Compliant	Americas -	10:$1.8810 100:$1.4580 250:$1.3640 500:$1.2690 1000:$1.2420
SIR870DP-T1-GE3	Vishay Intertechnologies	MOSFET N-CHANNEL 100-V(D-S)	Americas -	3000:$1.1210 6000:$1.0480 12000:$1.0090

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Disponibilità

Azione:: Available
Su ordine:: 1993
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Il prezzo attuale di SIR870DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~2,51 USD~~; ~~2,51 USD~~

10: ~~2,09 USD~~; ~~20,90 USD~~

100: ~~1,62 USD~~; ~~162,00 USD~~

500: ~~1,41 USD~~; ~~705,00 USD~~

1000: ~~1,17 USD~~; ~~1 170,00 USD~~

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SIR870DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes