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A3I35D025WNR1

A3I35D025WNR1
Mfr. #:
A3I35D025WNR1
Produttore:
NXP Semiconductors
Descrizione:
Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
A3I35D025WNR1 Scheda dati
Consegna:
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A3I35D025WNR1 maggiori informazioni A3I35D025WNR1 Product Details
Attributo del prodotto
Valore attributo
Tags
A3I35D02, A3I3, A3I
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF High-Power Wideband Drivers
NXP Semiconductors RF High-Power Wideband Drivers provide macro cellular networks that simultaneously cover multiple cellular bands. These drivers come with a superior level of integration and functionality that enables high quality and high-speed network connectivity. The RF wideband drivers are designed for digital pre-distortion error correction systems and incorporate on-chip matching (50Ω input and DC blocked). These drivers are optimized for Doherty applications and wide instantaneous bandwidth applications.
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
Parte # Mfg. Descrizione Azione Prezzo
A3I35D025WNR1
DISTI # V36:1790_21814491		NXP SemiconductorsAirfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V0
  • 500000:$27.4800
  • 250000:$27.4900
  • 50000:$32.4300
  • 5000:$45.8600
  • 500:$48.4400
A3I35D025WNR1
DISTI # A3I35D025WNR1		Avnet, Inc.RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R (Alt: A3I35D025WNR1)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel		Europe - 0
  • 5000:€26.8900
  • 3000:€28.8900
  • 2000:€31.0900
  • 1000:€32.2900
  • 500:€33.6900
A3I35D025WNR1
DISTI # A3I35D025WNR1		Avnet, Inc.RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R - Tape and Reel (Alt: A3I35D025WNR1)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$28.7900
  • 3000:$29.3900
  • 2000:$30.4900
  • 1000:$31.6900
  • 500:$32.9900
A3I35D025WNR1
DISTI # 65AC3711		NXP SemiconductorsAIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER, 3200-4000 MHZ, 3.4 W AVG., 28 V TR0
  • 250:$29.4800
  • 100:$30.3800
  • 50:$31.0600
  • 25:$33.3300
  • 10:$35.3700
  • 5:$37.6400
  • 1:$39.6800
A3I35D025WNR1
DISTI # 771-A3I35D025WNR1		NXP SemiconductorsRF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
RoHS: Compliant		490
  • 1:$48.4400
  • 5:$45.8300
  • 10:$45.1700
  • 25:$41.9000
  • 50:$40.5500
  • 100:$39.2800
  • 250:$34.0100
  • 500:$33.1700
A3I35D025WNR1
DISTI # A3I35D025WNR1		NXP SemiconductorsRF & MW POWER AMPLIFIER
RoHS: Compliant		0
  • 500:$38.5400
Immagine Parte # Descrizione
A3I35D025WNR1

Mfr.#: A3I35D025WNR1

OMO.#: OMO-A3I35D025WNR1

 RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
A3I35D012WNR1

Mfr.#: A3I35D012WNR1

OMO.#: OMO-A3I35D012WNR1

 RF Amplifier A3I35D012WN/FM17F///REEL 13 Q2 DP
A3I35D012WGNR1

Mfr.#: A3I35D012WGNR1

OMO.#: OMO-A3I35D012WGNR1

 RF Amplifier A3I35D012WGN/FM17F///REEL 13 Q2 DP
A3I35D025WGNR1

Mfr.#: A3I35D025WGNR1

OMO.#: OMO-A3I35D025WGNR1

 RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
A3I35D025WNR1

Mfr.#: A3I35D025WNR1

OMO.#: OMO-A3I35D025WNR1-1152

 Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V
A3I35D025GN

Mfr.#: A3I35D025GN

OMO.#: OMO-A3I35D025GN-1190

 Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
5500
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Il prezzo attuale di A3I35D025WNR1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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