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A3I35D025WNR1

A3I35D025WNR1
Mfr. #:
A3I35D025WNR1
Produttore:
NXP Semiconductors
Descrizione:
RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
A3I35D025WNR1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
A3I35D025WNR1 maggiori informazioni A3I35D025WNR1 Product Details
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Amplificatore RF
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-270WB-17
Tipo:
Banda larga
Frequenza operativa:
3200 MHz to 4000 MHz
Guadagno:
28.9 dB
Tensione di alimentazione operativa:
28 V
Frequenza di prova:
3800 MHz
Corrente di alimentazione operativa:
260 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Serie:
A3I35D025
Confezione:
Bobina
Marca:
Semiconduttori NXP
Numero di canali:
2 Channel
Sensibile all'umidità:
sì
Tipologia di prodotto:
Amplificatore RF
Quantità confezione di fabbrica:
500
sottocategoria:
Circuiti integrati wireless e RF
Parte # Alias:
935373852528
Tags
A3I35D02, A3I3, A3I
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF High-Power Wideband Drivers
NXP Semiconductors RF High-Power Wideband Drivers provide macro cellular networks that simultaneously cover multiple cellular bands. These drivers come with a superior level of integration and functionality that enables high quality and high-speed network connectivity. The RF wideband drivers are designed for digital pre-distortion error correction systems and incorporate on-chip matching (50Ω input and DC blocked). These drivers are optimized for Doherty applications and wide instantaneous bandwidth applications.
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
Parte # Mfg. Descrizione Azione Prezzo
A3I35D025WNR1
DISTI # V36:1790_21814491		NXP SemiconductorsAirfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V0
  • 500000:$27.4800
  • 250000:$27.4900
  • 50000:$32.4300
  • 5000:$45.8600
  • 500:$48.4400
A3I35D025WNR1
DISTI # A3I35D025WNR1		Avnet, Inc.RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R (Alt: A3I35D025WNR1)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel		Europe - 0
  • 5000:€26.8900
  • 3000:€28.8900
  • 2000:€31.0900
  • 1000:€32.2900
  • 500:€33.6900
A3I35D025WNR1
DISTI # A3I35D025WNR1		Avnet, Inc.RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R - Tape and Reel (Alt: A3I35D025WNR1)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$28.7900
  • 3000:$29.3900
  • 2000:$30.4900
  • 1000:$31.6900
  • 500:$32.9900
A3I35D025WNR1
DISTI # 65AC3711		NXP SemiconductorsAIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER, 3200-4000 MHZ, 3.4 W AVG., 28 V TR0
  • 250:$29.4800
  • 100:$30.3800
  • 50:$31.0600
  • 25:$33.3300
  • 10:$35.3700
  • 5:$37.6400
  • 1:$39.6800
A3I35D025WNR1
DISTI # 771-A3I35D025WNR1		NXP SemiconductorsRF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
RoHS: Compliant		490
  • 1:$48.4400
  • 5:$45.8300
  • 10:$45.1700
  • 25:$41.9000
  • 50:$40.5500
  • 100:$39.2800
  • 250:$34.0100
  • 500:$33.1700
A3I35D025WNR1
DISTI # A3I35D025WNR1		NXP SemiconductorsRF & MW POWER AMPLIFIER
RoHS: Compliant		0
  • 500:$38.5400
Immagine Parte # Descrizione
MIC94060YC6-TR

Mfr.#: MIC94060YC6-TR

OMO.#: OMO-MIC94060YC6-TR

 Power Switch ICs - Power Distribution Loadswitch w/level-shift
MIC94060YC6-TR

Mfr.#: MIC94060YC6-TR

OMO.#: OMO-MIC94060YC6-TR-MICROCHIP-TECHNOLOGY

 Power Switch ICs - Power Distribution
Disponibilità
Azione:
490
Su ordine:
2473
Inserisci la quantità:
Il prezzo attuale di A3I35D025WNR1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
48,44 USD
48,44 USD
5
45,83 USD
229,15 USD
10
45,17 USD
451,70 USD
25
41,90 USD
1 047,50 USD
50
40,55 USD
2 027,50 USD
100
39,28 USD
3 928,00 USD
250
34,01 USD
8 502,50 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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