We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSC100N03LSGATMA1 DISTI # BSC100N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC100N03LSGATMA1 DISTI # BSC100N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC100N03LSGATMA1 DISTI # BSC100N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC100N03LS G DISTI # 60R2508 | Infineon Technologies AG | MOSFET, N CH, 30V, 44A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Product Range:-RoHS Compliant: Yes | 0 | |
| BSC100N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5458 |
|
| BSC100N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 5000 |
|
| BSC100N03LS G DISTI # 726-BSC100N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 13A TDSON-8 RoHS: Compliant | 0 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BSC100N03LSG OMO.#: OMO-BSC100N03LSG-1190 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC100N03LSG , TDZ TR 6. |
Nuovo e originale |
|
|
Mfr.#: BSC100N03LSG,100N03LS, |
Nuovo e originale |
|
Mfr.#: BSC100N03LSGATMA1 |
MOSFET N-CH 30V 44A TDSON-8 |