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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSC100N03LSGATMA1 DISTI # BSC100N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC100N03LSGATMA1 DISTI # BSC100N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC100N03LSGATMA1 DISTI # BSC100N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC100N03LSGATMA1 DISTI # SP000275117 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP (Alt: SP000275117) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| BSC100N03LS G DISTI # 60R2508 | Infineon Technologies AG | MOSFET, N CH, 30V, 44A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Product Range:-RoHS Compliant: Yes | 0 | |
| BSC100N03LS G DISTI # 726-BSC100N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 13A TDSON-8 RoHS: Compliant | 0 | |
| BSC100N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5458 |
|
| BSC100N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 5000 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BSC100N06LS3 G OMO.#: OMO-BSC100N06LS3-G |
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC100N03MS G OMO.#: OMO-BSC100N03MS-G |
MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M |
|
Mfr.#: BSC100N03LS OMO.#: OMO-BSC100N03LS-1190 |
Nuovo e originale |
|
|
Mfr.#: BSC100N03LSG OMO.#: OMO-BSC100N03LSG-1190 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC100N03LSG , TDZ TR 6. |
Nuovo e originale |
|
|
Mfr.#: BSC100N03MS G OMO.#: OMO-BSC100N03MS-G-1190 |
Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP |
|
|
Mfr.#: BSC100N06LS3 G OMO.#: OMO-BSC100N06LS3-G-1190 |
Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R |
|
|
Mfr.#: BSC100N06LS3G OMO.#: OMO-BSC100N06LS3G-1190 |
60V,50A,N Channel Power MOSFET |
|
|
Mfr.#: BSC100N06LS3GXT OMO.#: OMO-BSC100N06LS3GXT-1190 |
Nuovo e originale |
|
Mfr.#: BSC100N10NSFGATMA1 |
MOSFET N-CH 100V 90A TDSON-8 |
