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IPL60R365P7AUMA1

IPL60R365P7AUMA1
Mfr. #:
IPL60R365P7AUMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPL60R365P7AUMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPL60R365P7AUMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
VSON-4
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
10 A
Rds On - Resistenza Drain-Source:
310 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
13 nC
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
46 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Bobina
Serie:
CoolMOS P7
Tipo di transistor:
1 N-Channel
Marca:
Tecnologie Infineon
Tempo di caduta:
10 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
4 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
42 ns
Tempo di ritardo di accensione tipico:
8 ns
Parte # Alias:
IPL60R365P7 SP001606054
Tags
IPL60R36, IPL60R3, IPL60, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 365 mOhm 25 nC CoolMOS™ Power Mosfet - VSON-4
***ark
Mosfet, N-Ch, 600V, 10A, 46W, Vson; Transistor Polarity:n Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.31Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Parte # Mfg. Descrizione Azione Prezzo
IPL60R365P7AUMA1
DISTI # V72:2272_17076872		Infineon Technologies AGTrans MOSFET N-CH 600V 10A 4-Pin VSON EP T/R3000
  • 3000:$0.9481
  • 1000:$0.9662
  • 500:$0.9844
  • 250:$1.0935
  • 100:$1.2153
  • 25:$1.5916
  • 10:$1.7686
  • 1:$2.2641
IPL60R365P7AUMA1
DISTI # V36:1790_17076872		Infineon Technologies AGTrans MOSFET N-CH 600V 10A 4-Pin VSON EP T/R0
  • 3000000:$0.8304
  • 1500000:$0.8307
  • 300000:$0.8535
  • 30000:$0.8934
  • 3000:$0.9000
IPL60R365P7AUMA1
DISTI # IPL60R365P7AUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 10A VSON-4
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8941In Stock
  • 1000:$1.1180
  • 500:$1.3493
  • 100:$1.6422
  • 10:$2.0430
  • 1:$2.2700
IPL60R365P7AUMA1
DISTI # IPL60R365P7AUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 650V 10A VSON-4
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8941In Stock
  • 1000:$1.1180
  • 500:$1.3493
  • 100:$1.6422
  • 10:$2.0430
  • 1:$2.2700
IPL60R365P7AUMA1
DISTI # IPL60R365P7AUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 10A VSON-4
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 6000:$0.9731
  • 3000:$1.0105
IPL60R365P7AUMA1
DISTI # 33122829		Infineon Technologies AGTrans MOSFET N-CH 600V 10A 4-Pin VSON EP T/R3000
  • 3000:$1.4594
IPL60R365P7AUMA1
DISTI # 33099350		Infineon Technologies AGTrans MOSFET N-CH 600V 10A 4-Pin VSON EP T/R3000
  • 8:$2.2641
IPL60R365P7AUMA1
DISTI # 33925026		Infineon Technologies AGTrans MOSFET N-CH 600V 10A 4-Pin VSON EP T/R3000
  • 3000:$0.8929
IPL60R365P7AUMA1
DISTI # IPL60R365P7AUMA1		Infineon Technologies AGLOW POWER_NEW - Tape and Reel (Alt: IPL60R365P7AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.9049
  • 18000:$0.9219
  • 12000:$0.9539
  • 6000:$0.9899
  • 3000:$1.0269
IPL60R365P7AUMA1
DISTI # SP001606054		Infineon Technologies AGLOW POWER_NEW (Alt: SP001606054)
RoHS: Compliant
Min Qty: 3000		Europe - 0
  • 30000:€0.8959
  • 18000:€0.9429
  • 12000:€1.0109
  • 6000:€1.2159
  • 3000:€1.5619
IPL60R365P7AUMA1
DISTI # 84AC6837		Infineon Technologies AGMOSFET, N-CH, 600V, 10A, 46W, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.31ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes498
  • 1000:$1.0400
  • 500:$1.2500
  • 250:$1.3400
  • 100:$1.4300
  • 50:$1.5600
  • 25:$1.6800
  • 10:$1.8000
  • 1:$2.1100
IPL60R365P7AUMA1Infineon Technologies AGSingle N-Channel 600 V 365 mOhm 25 nC CoolMOS Power Mosfet - VSON-4
RoHS: Not Compliant		3000Reel
  • 3000:$0.8900
IPL60R365P7AUMA1
DISTI # 726-IPL60R365P7AUMA1		Infineon Technologies AGMOSFET
RoHS: Compliant		16426
  • 1:$2.0900
  • 10:$1.7800
  • 100:$1.4200
  • 500:$1.2400
  • 1000:$1.0300
  • 3000:$0.9630
  • 6000:$0.9270
IPL60R365P7AUMA1
DISTI # XSFP00000116982		Infineon Technologies AG 
RoHS: Compliant		6000 in Stock0 on Order
  • 6000:$1.1900
  • 3000:$1.2700
IPL60R365P7AUMA1
DISTI # 2983367		Infineon Technologies AGMOSFET, N-CH, 600V, 10A, 46W, VSON
RoHS: Compliant		498
  • 1000:$1.4300
  • 500:$1.6300
  • 250:$1.7500
  • 100:$1.8700
  • 10:$2.3500
  • 1:$3.1000
IPL60R365P7AUMA1
DISTI # 2983367		Infineon Technologies AGMOSFET, N-CH, 600V, 10A, 46W, VSON498
  • 500:£0.9060
  • 250:£0.9740
  • 100:£1.0400
  • 10:£1.3100
  • 1:£1.7400
Immagine Parte # Descrizione
IPB60R120P7ATMA1

Mfr.#: IPB60R120P7ATMA1

OMO.#: OMO-IPB60R120P7ATMA1

 MOSFET HIGH POWER_NEW
IPL60R185P7AUMA1

Mfr.#: IPL60R185P7AUMA1

OMO.#: OMO-IPL60R185P7AUMA1

 MOSFET
SIR690DP-T1-GE3

Mfr.#: SIR690DP-T1-GE3

OMO.#: OMO-SIR690DP-T1-GE3

 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
IPL65R230C7

Mfr.#: IPL65R230C7

OMO.#: OMO-IPL65R230C7

 MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7
IPL60R299CP

Mfr.#: IPL60R299CP

OMO.#: OMO-IPL60R299CP

 MOSFET N-Ch 650V 11.1A ThinPAK-4 CoolMOS CP
TPS560430XDBVR

Mfr.#: TPS560430XDBVR

OMO.#: OMO-TPS560430XDBVR

 Switching Voltage Regulators NIXON TPS560430XDBVR DC-DC CONVERTER
TPS560430XDBVR

Mfr.#: TPS560430XDBVR

OMO.#: OMO-TPS560430XDBVR-TEXAS-INSTRUMENTS

 IC REG BUCK PFM 600MA SOT23-6
SIR690DP-T1-GE3

Mfr.#: SIR690DP-T1-GE3

OMO.#: OMO-SIR690DP-T1-GE3-VISHAY

 MOSFET N-CH 200V 34.4A SO-8
IPB60R120P7ATMA1

Mfr.#: IPB60R120P7ATMA1

OMO.#: OMO-IPB60R120P7ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH TO263-3
IPL60R185P7AUMA1

Mfr.#: IPL60R185P7AUMA1

OMO.#: OMO-IPL60R185P7AUMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 19A VSON-4
Disponibilità
Azione:
16
Su ordine:
1999
Inserisci la quantità:
Il prezzo attuale di IPL60R365P7AUMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,09 USD
2,09 USD
10
1,78 USD
17,80 USD
100
1,42 USD
142,00 USD
500
1,24 USD
620,00 USD
1000
1,03 USD
1 030,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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