IPB60R120P7ATMA1

Mfr. #:: IPB60R120P7ATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET HIGH POWER_NEW
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPB60R120P7ATMA1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:
Maggiori informazioni:: IPB60R120P7ATMA1 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-263-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 600 V

Id - Corrente di scarico continua:: 26 A

Rds On - Resistenza Drain-Source:: 100 mOhms

Vgs th - Tensione di soglia gate-source:: 3 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 36 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 95 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Bobina

Tipo di transistor:: 1 N-Channel

Marca:: Tecnologie Infineon

Tempo di caduta:: 6 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 14 ns

Quantità confezione di fabbrica:: 1000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 81 ns

Tempo di ritardo di accensione tipico:: 21 ns

Parte # Alias:: IPB60R120P7 SP001664922

Tags: IPB60R12, IPB60R1, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R120P7ATMA1 Descrizione

***ure Electronics: Single N-Channel 600 V 120 mOhm 36 nC CoolMOS Power Mosfet - D2PAK

***ineon: Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

***ark: Mosfet, N-Ch, 600V, 26A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes

IPB60R120P7ATMA1 Maggiori informazioni

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPB60R120P7ATMA1 DISTI # V72:2272_18787577	Infineon Technologies AG	HIGH POWER_NEW	950	500:$2.1410 250:$2.4120 100:$2.5400 25:$2.6320 10:$2.9240 1:$3.7796
IPB60R120P7ATMA1 DISTI # V36:1790_18787577	Infineon Technologies AG	HIGH POWER_NEW	0	1000000:$1.5240 500000:$1.5260 100000:$1.6640 10000:$1.8870 1000:$1.9240
IPB60R120P7ATMA1 DISTI # IPB60R120P7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1761In Stock	500:$2.3491 100:$2.7595 10:$3.3680 1:$3.7500
IPB60R120P7ATMA1 DISTI # IPB60R120P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1761In Stock	500:$2.3491 100:$2.7595 10:$3.3680 1:$3.7500
IPB60R120P7ATMA1 DISTI # IPB60R120P7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	5000:$1.7586 2000:$1.8273 1000:$1.9235
IPB60R120P7ATMA1 DISTI # 33092983	Infineon Technologies AG	HIGH POWER_NEW	1000	1000:$1.6389
IPB60R120P7ATMA1 DISTI # 33590324	Infineon Technologies AG	HIGH POWER_NEW	1000	1000:$2.7812
IPB60R120P7ATMA1 DISTI # 32928341	Infineon Technologies AG	HIGH POWER_NEW	950	4:$3.7796
IPB60R120P7ATMA1 DISTI # IPB60R120P7ATMA1	Infineon Technologies AG	HIGH POWER_NEW - Tape and Reel (Alt: IPB60R120P7ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$1.5900 10000:$1.5900 4000:$1.6900 1000:$1.7900 2000:$1.7900
IPB60R120P7ATMA1 DISTI # SP001664922	Infineon Technologies AG	HIGH POWER_NEW (Alt: SP001664922) RoHS: Compliant Min Qty: 1000	Europe - 0	10000:€1.3900 6000:€1.4900 4000:€1.5900 2000:€1.6900 1000:€1.7900
IPB60R120P7ATMA1 DISTI # 49AC7996	Infineon Technologies AG	MOSFET, N-CH, 600V, 26A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:26A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes	0	500:$2.1900 250:$2.4400 100:$2.5800 50:$2.7100 25:$2.8400 10:$2.9700 1:$3.4900
IPB60R120P7ATMA1 DISTI # 726-IPB60R120P7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	17096	1:$3.4600 10:$2.9400 100:$2.5500 250:$2.4200 500:$2.1700 1000:$1.8300 2000:$1.7400
IPB60R120P7ATMA1	Infineon Technologies AG	Single N-Channel 600 V 120 mOhm 36 nC CoolMOS Power Mosfet - D2PAK RoHS: Not Compliant	1000Reel	1000:$1.7000
IPB60R120P7ATMA1 DISTI # 2841644	Infineon Technologies AG	MOSFET, N-CH, 600V, 26A, TO-263 RoHS: Compliant	0	1000:$2.6200 500:$2.6700 250:$2.8200 100:$2.9800 10:$3.3700 1:$3.6100
IPB60R120P7ATMA1 DISTI # XSFP00000130966	Infineon Technologies AG	RoHS: Compliant	2000 in Stock0 on Order	2000:$2.2700 1000:$2.4300
IPB60R120P7ATMA1 DISTI # 2841644	Infineon Technologies AG	MOSFET, N-CH, 600V, 26A, TO-263	0	500:£1.7000 250:£1.8800 100:£1.9900 10:£2.2900 1:£3.0300

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Disponibilità

Azione:: 17
Su ordine:: 2000
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Il prezzo attuale di IPB60R120P7ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~3,46 USD~~; ~~3,46 USD~~

10: ~~2,94 USD~~; ~~29,40 USD~~

100: ~~2,55 USD~~; ~~255,00 USD~~

250: ~~2,42 USD~~; ~~605,00 USD~~

500: ~~2,17 USD~~; ~~1 085,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

IPB60R12 12
IPB60R1 41
IPB60R 100
IPB60 105
IPB6 183
IPB 1339

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IPB60R120P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes