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IRFZ34EPBF

IRFZ34EPBF
Mfr. #:
IRFZ34EPBF
Produttore:
Infineon / IR
Descrizione:
MOSFET 60V 1 N-CH HEXFET 7mOhms 30nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFZ34EPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
28 A
Rds On - Resistenza Drain-Source:
42 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
20 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
68 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
15.65 mm
Lunghezza:
10 mm
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET di potenza HEXFET
Larghezza:
4.4 mm
Marca:
Infineon / IR
Tempo di caduta:
30 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
30 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
22 ns
Tempo di ritardo di accensione tipico:
5.1 ns
Parte # Alias:
SP001567916
Unità di peso:
0.211644 oz
Tags
IRFZ34, IRFZ3, IRFZ, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.042Ohm;ID 28A;TO-220AB;PD 68W;VGS +/-20V
***ernational Rectifier
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***ical
Trans MOSFET N-CH 60V 28A 3-Pin (3+Tab) TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 28A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):42mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 60V, 28A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:60V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:68W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:28A; Current Temperature:25°C; Device Marking:IRFZ34EPBF; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:68W; Power Dissipation Pd:68W; Pulse Current Idm:112A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descrizione Azione Prezzo
IRFZ34EPBF
DISTI # IRFZ34EPBF-ND		Infineon Technologies AGMOSFET N-CH 60V 28A TO-220AB
RoHS: Compliant
Min Qty: 3000
Container: Tube		Limited Supply - Call
    IRFZ34EPBF
    DISTI # 70017050    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 60V,RDS(ON) 0.042Ohm,ID 28A,TO-220AB,PD 68W,VGS +/-20V
    RoHS: Compliant    		0
    • 1:$1.6000
    • 2:$1.5680
    • 5:$1.5200
    • 10:$1.4560
    • 25:$1.3600
    IRFZ34EPBFInternational Rectifier 
    RoHS: Compliant    		450
      IRFZ34EPBF
      DISTI # 8650187      		Infineon Technologies AGMOSFET, N, 60V, 28A, TO-220
      RoHS: Compliant      		0
      • 1000:$1.3100
      • 500:$1.3600
      • 250:$1.4300
      • 100:$1.5100
      • 10:$1.9600
      • 1:$2.7900
      Immagine Parte # Descrizione
      IRFZ34PBF

      Mfr.#: IRFZ34PBF

      OMO.#: OMO-IRFZ34PBF

      		 MOSFET N-CH 60V HEXFET MOSFET
      IRFZ34NLPBF

      Mfr.#: IRFZ34NLPBF

      OMO.#: OMO-IRFZ34NLPBF

      		 MOSFET MOSFT 55V 29A 40mOhm 22.7nC
      IRFZ34S

      Mfr.#: IRFZ34S

      OMO.#: OMO-IRFZ34S

      		 MOSFET N-Chan 60V 30 Amp
      IRFZ34NSTRR

      Mfr.#: IRFZ34NSTRR

      OMO.#: OMO-IRFZ34NSTRR-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 55V 29A D2PAK
      IRFZ34L

      Mfr.#: IRFZ34L

      OMO.#: OMO-IRFZ34L-VISHAY

      		 MOSFET N-CH 60V 30A TO-262
      IRFZ34STRRPBF

      Mfr.#: IRFZ34STRRPBF

      OMO.#: OMO-IRFZ34STRRPBF-1190

      		 Nuovo e originale
      IRFZ34NSTRLPBF

      Mfr.#: IRFZ34NSTRLPBF

      OMO.#: OMO-IRFZ34NSTRLPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 55V 29A D2PAK
      IRFZ3007S

      Mfr.#: IRFZ3007S

      OMO.#: OMO-IRFZ3007S-1190

      		 Nuovo e originale
      IRFZ34NPBF-CN

      Mfr.#: IRFZ34NPBF-CN

      OMO.#: OMO-IRFZ34NPBF-CN-1190

      		 Nuovo e originale
      IRFZ34NS,FZ34NS

      Mfr.#: IRFZ34NS,FZ34NS

      OMO.#: OMO-IRFZ34NS-FZ34NS-1190

      		 Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      1000
      Inserisci la quantità:
      Il prezzo attuale di IRFZ34EPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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