SIHA6N80E-GE3

SIHA6N80E-GE3
Mfr. #:
SIHA6N80E-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 800V Vds 30V Vgs TO-220 FULLPAK
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHA6N80E-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHA6N80E-GE3 DatasheetSIHA6N80E-GE3 Datasheet (P4-P6)SIHA6N80E-GE3 Datasheet (P7)
ECAD Model:
Maggiori informazioni:
SIHA6N80E-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220FP-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
800 V
Id - Corrente di scarico continua:
5.4 A
Rds On - Resistenza Drain-Source:
820 mOhms
Vgs th - Tensione di soglia gate-source:
4 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
44 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
31 W
Configurazione:
Separare
Modalità canale:
Aumento
Serie:
E
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
2.5 S
Tempo di caduta:
18 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
9 ns
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
27 ns
Tempo di ritardo di accensione tipico:
13 ns
Tags
SIHA6, SIHA, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 800V 5.4A 3-Pin TO-220FP
***ment14 APAC
MOSFET, N-CH, 800V, 5.4A, 150DEG C, 31W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.4A; Source Voltage Vds:800V; On
***nell
MOSFET, N-CH, 800V, 5.4A, 150DEG C, 31W; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.4A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.82ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 31W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHA6N80E-GE3
DISTI # V99:2348_21764824
Vishay IntertechnologiesSIHA6N80E-GE3969
  • 2500:$1.0758
  • 1000:$1.1101
  • 500:$1.4157
  • 100:$1.6017
  • 25:$1.9935
  • 10:$2.0671
  • 1:$2.6684
SIHA6N80E-GE3
DISTI # V36:1790_21764824
Vishay IntertechnologiesSIHA6N80E-GE30
  • 1000000:$1.1030
  • 500000:$1.1060
  • 100000:$1.3990
  • 10000:$1.9300
  • 1000:$2.0200
SIHA6N80E-GE3
DISTI # SIHA6N80E-GE3-ND
Vishay SiliconixMOSFET N-CHAN 800V TO-220FP
RoHS: Compliant
Min Qty: 1
Container: Tube
995In Stock
  • 5000:$1.1043
  • 3000:$1.1468
  • 1000:$1.2317
  • 100:$1.8093
  • 25:$2.1236
  • 10:$2.2510
  • 1:$2.5100
SIHA6N80E-GE3
DISTI # 28956213
Vishay IntertechnologiesSIHA6N80E-GE3969
  • 2500:$1.0758
  • 1000:$1.1101
  • 500:$1.4157
  • 100:$1.6017
  • 25:$1.9935
  • 10:$2.0671
  • 7:$2.6684
SIHA6N80E-GE3
DISTI # SIHA6N80E-GE3
Vishay IntertechnologiesE Series Power MOSFET Single N-Channel 800V VDS ±30V 5.4A ID Thin Lead 3-Pin TO-220FP (Alt: SIHA6N80E-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€1.0339
  • 500:€1.0619
  • 100:€1.0769
  • 50:€1.0939
  • 25:€1.2319
  • 10:€1.4929
  • 1:€2.1309
SIHA6N80E-GE3
DISTI # SIHA6N80E-GE3
Vishay IntertechnologiesE Series Power MOSFET Single N-Channel 800V VDS ±30V 5.4A ID Thin Lead 3-Pin TO-220FP - Tape and Reel (Alt: SIHA6N80E-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$1.0369
  • 6000:$1.0649
  • 4000:$1.0959
  • 2000:$1.1419
  • 1000:$1.1769
SIHA6N80E-GE3
DISTI # 78AC6516
Vishay IntertechnologiesMOSFET, N-CH, 800V, 5.4A, 150DEG C, 31W,Transistor Polarity:N Channel,Continuous Drain Current Id:5.4A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.82ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes1000
  • 1000:$1.1900
  • 500:$1.4300
  • 100:$1.6400
  • 50:$1.7900
  • 25:$1.9500
  • 10:$2.1100
  • 1:$2.5500
SIHA6N80E-GE3
DISTI # 78-SIHA6N80E-GE3
Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant
1050
  • 1:$2.5200
  • 10:$2.0900
  • 100:$1.6200
  • 500:$1.4200
  • 1000:$1.1800
SIHA6N80E-GE3
DISTI # 2932917
Vishay IntertechnologiesMOSFET, N-CH, 800V, 5.4A, 150DEG C, 31W1000
  • 500:£1.0400
  • 250:£1.1200
  • 100:£1.1900
  • 10:£1.5400
  • 1:£2.0900
SIHA6N80E-GE3
DISTI # 2932917
Vishay IntertechnologiesMOSFET, N-CH, 800V, 5.4A, 150DEG C, 31W
RoHS: Compliant
1000
  • 1000:$1.8600
  • 500:$1.9700
  • 250:$2.0900
  • 100:$2.2700
  • 10:$2.6200
  • 1:$3.0100
Immagine Parte # Descrizione
SIHA6N80E-GE3

Mfr.#: SIHA6N80E-GE3

OMO.#: OMO-SIHA6N80E-GE3

MOSFET 800V Vds 30V Vgs TO-220 FULLPAK
SIHA6N65E-E3

Mfr.#: SIHA6N65E-E3

OMO.#: OMO-SIHA6N65E-E3

MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
SIHA6N65E-E3

Mfr.#: SIHA6N65E-E3

OMO.#: OMO-SIHA6N65E-E3-VISHAY

MOSFET N-CHANNEL 650V 7A TO220
SIHA6N80E-GE3

Mfr.#: SIHA6N80E-GE3

OMO.#: OMO-SIHA6N80E-GE3-VISHAY

MOSFET N-CHAN 800V TO-220FP
Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di SIHA6N80E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,52 USD
2,52 USD
10
2,09 USD
20,90 USD
100
1,62 USD
162,00 USD
500
1,42 USD
710,00 USD
1000
1,18 USD
1 180,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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