IPB60R120C7ATMA1

Mfr. #:: IPB60R120C7ATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-CH 650V 19A TO263-3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPB60R120C7ATMA1 Scheda dati
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Maggiori informazioni:: IPB60R120C7ATMA1 maggiori informazioni

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Tags: IPB60R12, IPB60R1, IPB60R, IPB60, IPB6, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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Step2:
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IPB60R120C7ATMA1 Descrizione

***ical: Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab) D2PAK T/R

***ark: Mosfet, N-Ch, 600V, 19A, 92W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.103Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

IPB60R120C7ATMA1 Maggiori informazioni

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ C7 Power MOSFETs: Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPB60R120C7ATMA1 DISTI # 30156544	Infineon Technologies AG	Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) D2PAK	1000	1000:$1.9776
IPB60R120C7ATMA1 DISTI # IPB60R120C7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 19A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	2000:$2.2722 1000:$2.3918
IPB60R120C7ATMA1 DISTI # IPB60R120C7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 19A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$2.9210 100:$3.6073 10:$4.3990 1:$4.9300
IPB60R120C7ATMA1 DISTI # IPB60R120C7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 650V 19A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$2.9210 100:$3.6073 10:$4.3990 1:$4.9300
IPB60R120C7ATMA1 DISTI # SP001385048	Infineon Technologies AG	MOSFET HIGH POWER_NEW (Alt: SP001385048) RoHS: Compliant Min Qty: 1000	Europe - 2000	1000:€2.0900 2000:€1.9900 4000:€1.8900 6000:€1.7900 10000:€1.6900
IPB60R120C7ATMA1 DISTI # IPB60R120C7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW - Tape and Reel (Alt: IPB60R120C7ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$2.1900 2000:$2.0900 4000:$1.9900 6000:$1.9900 10000:$1.8900
IPB60R120C7ATMA1 DISTI # 93AC7105	Infineon Technologies AG	MOSFET, N-CH, 600V, 19A, 92W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.103ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	1000	500:$2.0600 250:$2.3000 100:$2.4200 50:$2.5400 25:$2.6700 10:$2.7900 1:$3.2900
IPB60R120C7ATMA1 DISTI # 726-IPB60R120C7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	0	1:$4.1100 10:$3.4900 100:$3.0200 250:$2.8700 500:$2.5700 1000:$2.1700 2000:$2.0600
IPB60R120C7ATMA1 DISTI # 2986357	Infineon Technologies AG	MOSFET, N-CH, 600V, 19A, 92W, TO-263 RoHS: Compliant	1000	1000:$3.0600 500:$3.4300 250:$3.7700 100:$3.9900 10:$4.5600 1:$5.7900
IPB60R120C7ATMA1 DISTI # XSKDRABS0033126	Infineon Technologies AG	RoHS: Compliant	3000 in Stock0 on Order	3000:$2.8920 1000:$3.0960
IPB60R120C7ATMA1 DISTI # 2986357	Infineon Technologies AG	MOSFET, N-CH, 600V, 19A, 92W, TO-263 RoHS: Compliant	1000	100:£2.7200 10:£3.1300 1:£4.1300

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IPB60R120P7ATMA1 OMO.#: OMO-IPB60R120P7ATMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPB60R125C6 OMO.#: OMO-IPB60R125C6	MOSFET N-Ch 650V 30A D2PAK-2 CoolMOS C6
	Mfr.#: IPB60R125CPATMA1 OMO.#: OMO-IPB60R125CPATMA1	MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP
	Mfr.#: IPB60R125CP OMO.#: OMO-IPB60R125CP	MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP
	Mfr.#: IPB60R120C7ATMA1 OMO.#: OMO-IPB60R120C7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 19A TO263-3
	Mfr.#: IPB60R120P7ATMA1 OMO.#: OMO-IPB60R120P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH TO263-3
	Mfr.#: IPB60R125CPXT OMO.#: OMO-IPB60R125CPXT-1190	Trans MOSFET N-CH 600V 25A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R125CPATMA1)
	Mfr.#: IPB60R125C6 OMO.#: OMO-IPB60R125C6-1190	MOSFET N-Ch 650V 30A D2PAK-2 CoolMOS C6
	Mfr.#: IPB60R125C6ATMA1 OMO.#: OMO-IPB60R125C6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 30A TO263
	Mfr.#: IPB60R125C6S OMO.#: OMO-IPB60R125C6S-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 2500
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Il prezzo attuale di IPB60R120C7ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~2,84 USD~~; ~~2,84 USD~~

10: ~~2,69 USD~~; ~~26,93 USD~~

100: ~~2,55 USD~~; ~~255,15 USD~~

500: ~~2,41 USD~~; ~~1 204,90 USD~~

1000: ~~2,27 USD~~; ~~2 268,00 USD~~

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IPB60R120C7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes