IRF100B201

IRF100B201
Mfr. #:
IRF100B201
Produttore:
Infineon / IR
Descrizione:
MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF100B201 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IRF100B201 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
192 A
Rds On - Resistenza Drain-Source:
4.2 mOhms
Vgs th - Tensione di soglia gate-source:
2 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
170 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
441 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
StrongIRFET
Confezione:
Tubo
Altezza:
15.65 mm
Lunghezza:
10 mm
Larghezza:
4.4 mm
Marca:
Infineon / IR
Transconduttanza diretta - Min:
278 S
Tempo di caduta:
100 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
97 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
110 ns
Tempo di ritardo di accensione tipico:
17 ns
Parte # Alias:
SP001561498
Unità di peso:
0.211644 oz
Tags
IRF100B, IRF100, IRF10, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 4.2 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
***et
Trans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant, Halogen-Free
IRF100x201 HEXFET™ Power MOSFETs
Infineon IRF100x201 HEXFET™ Power MOSFETs are 100V, single N-channel MOSFETs with enhanced body diode dV/dt and dl/dt capability. These MOSFETs provide improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance, and avalanche Safe Operating Area (SOA). The IRF100x201 MOSFETs come in TO-220 and D2-Pak packages and are RoHS compliant, lead-free, and halogen-free. Applications include brushed and BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, power supplies, and power switches.
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Parte # Mfg. Descrizione Azione Prezzo
IRF100B201
DISTI # V99:2348_14701511
Infineon Technologies AGTrans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
3000
  • 1:$2.0406
IRF100B201
DISTI # IRF100B201-ND
Infineon Technologies AGMOSFET N-CH 100V 192A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
4000In Stock
  • 1000:$1.3781
  • 500:$1.6632
  • 100:$2.1384
  • 10:$2.6610
  • 1:$2.9500
IRF100B201
DISTI # 30660878
Infineon Technologies AGTrans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
3000
  • 7:$2.0406
IRF100B201
DISTI # 30155962
Infineon Technologies AGTrans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
1830
  • 650:$0.9501
  • 250:$0.9792
  • 50:$1.0752
IRF100B201
DISTI # IRF100B201
Infineon Technologies AGTrans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB - Rail/Tube (Alt: IRF100B201)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 3000:$1.0079
  • 5000:$0.9719
  • 8000:$0.9369
  • 15000:$0.9049
  • 30000:$0.8889
IRF100B201
DISTI # IRF100B201
Infineon Technologies AGTrans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB (Alt: IRF100B201)
RoHS: Compliant
Min Qty: 1000
Asia - 0
  • 1000:$1.1340
  • 2000:$1.0874
  • 3000:$1.0727
  • 5000:$1.0309
  • 10000:$1.0177
  • 25000:$0.9922
  • 50000:$0.9680
IRF100B201
DISTI # SP001561498
Infineon Technologies AGTrans MOSFET, 100V, 192A, 4.2 MOHM, 170 NC QG, TO-220AB (Alt: SP001561498)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.2999
  • 10:€1.1809
  • 25:€1.0829
  • 50:€1.0399
  • 100:€0.9999
  • 500:€0.9619
  • 1000:€0.9279
IRF100B201
DISTI # 12AC9745
Infineon Technologies AGMOSFET, N-CH, 100V, 192A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:192A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes3134
  • 1:$2.5500
  • 10:$2.1600
  • 100:$1.7300
  • 500:$1.5200
  • 1000:$1.2600
IRF100B201
DISTI # 942-IRF100B201
Infineon Technologies AGMOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg
RoHS: Compliant
1779
  • 1:$2.5500
  • 10:$2.1600
  • 100:$1.7300
  • 500:$1.5200
  • 1000:$1.2600
IRF100B201Infineon Technologies AGPower Field-Effect Transistor
RoHS: Compliant
450
  • 1000:$1.1300
  • 500:$1.1900
  • 100:$1.2400
  • 25:$1.2900
  • 1:$1.3900
IRF100B201
DISTI # 2709888
Infineon Technologies AGMOSFET, N-CH, 100V, 192A, TO-220AB
RoHS: Compliant
3134
  • 1:$3.0100
  • 10:$2.8100
  • 100:$2.4900
  • 500:$2.3500
  • 1000:$2.2300
IRF100B201
DISTI # 2709888
Infineon Technologies AGMOSFET, N-CH, 100V, 192A, TO-220AB
RoHS: Compliant
3412
  • 1:£2.6500
  • 10:£2.0900
  • 100:£1.6700
IRF100B201
DISTI # C1S322000590089
Infineon Technologies AGMOSFETs
RoHS: Compliant
1830
  • 1000:$1.3000
  • 500:$1.7000
  • 100:$1.8500
  • 25:$2.2500
  • 5:$2.7800
Immagine Parte # Descrizione
DRV8353RHRGZT

Mfr.#: DRV8353RHRGZT

OMO.#: OMO-DRV8353RHRGZT

Motor / Motion / Ignition Controllers & Drivers 100V 3-PHASE GATE DRIVE
ESD12VD9-TP

Mfr.#: ESD12VD9-TP

OMO.#: OMO-ESD12VD9-TP

TVS Diodes / ESD Suppressors Uni-dir 10mA, 12V
TPS54360DDAR

Mfr.#: TPS54360DDAR

OMO.#: OMO-TPS54360DDAR

Switching Voltage Regulators 60 Vin,3.5 A,SD DC-DC Converter
ESD12VD9-TP

Mfr.#: ESD12VD9-TP

OMO.#: OMO-ESD12VD9-TP-1143

ESD Suppressors Uni-dir 10mA, 12V
DRV8353RHRGZT

Mfr.#: DRV8353RHRGZT

OMO.#: OMO-DRV8353RHRGZT-TEXAS-INSTRUMENTS

100-V Three-Phase Smart Gate Driver With Buck Regulator and Three Current Shunt Amplifiers
DRV8353RS-EVM

Mfr.#: DRV8353RS-EVM

OMO.#: OMO-DRV8353RS-EVM-TEXAS-INSTRUMENTS

95V BLDC MOTOR DRIVER EVM
REF3425QDBVRQ1

Mfr.#: REF3425QDBVRQ1

OMO.#: OMO-REF3425QDBVRQ1-TEXAS-INSTRUMENTS

REF3425 - 6 PPM/C IQ 95UA 2.5V FOR AUTO
TPS54360DDAR

Mfr.#: TPS54360DDAR

OMO.#: OMO-TPS54360DDAR-TEXAS-INSTRUMENTS

Voltage Regulators - Switching Regulators 60 Vin,3.5 A,SD DC-DC Converte
UCC28064ADR

Mfr.#: UCC28064ADR

OMO.#: OMO-UCC28064ADR-TEXAS-INSTRUMENTS

CONTROLLER WITH IMPROVED LIGHT L
UCC21520AQDWRQ1

Mfr.#: UCC21520AQDWRQ1

OMO.#: OMO-UCC21520AQDWRQ1-TEXAS-INSTRUMENTS

Isolated Dual-Channel Gate Driver for Automotive
Disponibilità
Azione:
14
Su ordine:
1997
Inserisci la quantità:
Il prezzo attuale di IRF100B201 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,54 USD
2,54 USD
10
2,16 USD
21,60 USD
100
1,72 USD
172,00 USD
500
1,51 USD
755,00 USD
1000
1,25 USD
1 250,00 USD
2000
1,16 USD
2 320,00 USD
5000
1,12 USD
5 600,00 USD
10000
1,08 USD
10 800,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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