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IPW60R125CFD7XKSA1

IPW60R125CFD7XKSA1
Mfr. #:
IPW60R125CFD7XKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET HIGH POWER_NEW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPW60R125CFD7XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPW60R125CFD7XKSA1 Datasheet
ECAD Model:
Maggiori informazioni:
IPW60R125CFD7XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
18 A
Rds On - Resistenza Drain-Source:
125 mOhms
Vgs th - Tensione di soglia gate-source:
3.5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
36 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
92 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Serie:
CoolMOS CFD7
Marca:
Tecnologie Infineon
Tempo di caduta:
6 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
14 ns
Quantità confezione di fabbrica:
240
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
66 ns
Tempo di ritardo di accensione tipico:
31 ns
Parte # Alias:
IPW60R125CFD7 SP001686040
Tags
IPW60R125C, IPW60R125, IPW60R12, IPW60R1, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 SJ High Voltage MOSFET 600V 125/140mOhm TO-247
***i-Key
HIGH POWER_NEW
***ark
Mosfet, 600V, 18A, 150Deg C, 92W; Transistor Polarity:n Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.104Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, 600V, 18A, 150DEG C, 92W; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:92W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, 600V, 18A, 150° C, 92W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:18A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.104ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:92W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS CFD7 is Infineons latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS 7 series. CoolMOS CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. | Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
Parte # Mfg. Descrizione Azione Prezzo
IPW60R125CFD7XKSA1
DISTI # IPW60R125CFD7XKSA1-ND		Infineon Technologies AGHIGH POWER_NEW
RoHS: Compliant
Min Qty: 1
Container: Tube		195In Stock
  • 2640:$2.3322
  • 720:$2.9108
  • 240:$3.4193
  • 25:$3.9452
  • 10:$4.1730
  • 1:$4.6500
IPW60R125CFD7XKSA1
DISTI # IPW60R125CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 SJ High Voltage MOSFET 600V 125/140mOhm TO-247 - Rail/Tube (Alt: IPW60R125CFD7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$2.0900
  • 2400:$2.0900
  • 960:$2.1900
  • 480:$2.2900
  • 240:$2.3900
IPW60R125CFD7XKSA1
DISTI # SP001686040		Infineon Technologies AGCoolMOS CFD7 SJ High Voltage MOSFET 600V 125/140mOhm TO-247 (Alt: SP001686040)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 500:€1.8900
  • 1000:€1.8900
  • 100:€1.9900
  • 25:€2.0900
  • 50:€2.0900
  • 10:€2.2900
  • 1:€2.8900
IPW60R125CFD7XKSA1
DISTI # 71AC0410		Infineon Technologies AGMOSFET, 600V, 18A, 150DEG C, 92W,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.104ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes186
  • 500:$2.8000
  • 250:$3.1200
  • 100:$3.2800
  • 50:$3.4500
  • 25:$3.6200
  • 10:$3.7900
  • 1:$4.4600
IPW60R125CFD7XKSA1
DISTI # 726-IPW60R125CFD7XKS		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		80
  • 1:$4.4200
  • 10:$3.7500
  • 100:$3.2500
  • 250:$3.0900
  • 500:$2.7700
IPW60R125CFD7XKSA1
DISTI # XSKDRABV0051214		Infineon Technologies AG 
RoHS: Compliant		720 in Stock0 on Order
  • 720:$2.9300
  • 240:$3.1400
IPW60R125CFD7XKSA1
DISTI # 2916152		Infineon Technologies AGMOSFET, 600V, 18A, 150DEG C, 92W
RoHS: Compliant		186
  • 1000:$3.3500
  • 500:$3.4100
  • 250:$3.6000
  • 100:$3.8100
  • 10:$4.3000
  • 1:$4.6000
IPW60R125CFD7XKSA1
DISTI # 2916152		Infineon Technologies AGMOSFET, 600V, 18A, 150DEG C, 92W196
  • 500:£2.0200
  • 250:£2.2600
  • 100:£2.3800
  • 10:£2.7500
  • 1:£3.6100
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IPW60R145CFD7XKSA1

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IPW60R125P6

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 MOSFET HIGH POWER PRICE/PERFORM
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 Schottky Diodes & Rectifiers 650 V power Schottky silicon carbide diode
C3D10060A

Mfr.#: C3D10060A

OMO.#: OMO-C3D10060A

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 600V, 10A
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Disponibilità
Azione:
80
Su ordine:
2063
Inserisci la quantità:
Il prezzo attuale di IPW60R125CFD7XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
4,42 USD
4,42 USD
10
3,75 USD
37,50 USD
100
3,25 USD
325,00 USD
250
3,09 USD
772,50 USD
500
2,77 USD
1 385,00 USD
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