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IPW60R170CFD7XKSA1

IPW60R170CFD7XKSA1
Mfr. #:
IPW60R170CFD7XKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET HIGH POWER_NEW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPW60R170CFD7XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPW60R170CFD7XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
14 A
Rds On - Resistenza Drain-Source:
144 mOhms
Vgs th - Tensione di soglia gate-source:
3.5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
28 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
75 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Tubo
Serie:
CoolMOS CFD7
Tipo di transistor:
1 N-Channel
Marca:
Tecnologie Infineon
Tempo di caduta:
9 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
15 ns
Quantità confezione di fabbrica:
240
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
68 ns
Tempo di ritardo di accensione tipico:
31 ns
Parte # Alias:
IPW60R170CFD7 SP001617988
Tags
IPW60R1, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 170mΩ 75W 600V PG-TO 247-3
***ark
Mosfet, N-Ch, 600V, 14A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.144Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
The 600V CoolMOS CFD7 is s latest high voltage superjunction MOSFET technology with integrated fast body diode, completes the CoolMOS 7 series. It is the ideal choice for resonant topologies in high power SMPS applications such as server, telecom and EV charging stations. | Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Q rr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM R DS(on) x Q g and E oss; Best-in-class R DS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency in target applications; Enabling increased power density solutions | Target Applications: Server; Telecom; EV-charging; SMPS; PC power
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
IPW60R170CFD7XKSA1
DISTI # V36:1790_18786390		Infineon Technologies AGTrans MOSFET N-CH 600V 14A 3-Pin(3+Tab) TO-247 Tube0
  • 240000:$1.4100
  • 120000:$1.4130
  • 24000:$1.8430
  • 2400:$2.6680
  • 240:$2.8100
IPW60R170CFD7XKSA1
DISTI # IPW60R170CFD7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		497In Stock
  • 5040:$1.6264
  • 2640:$1.6899
  • 720:$2.1092
  • 240:$2.4777
  • 25:$2.8588
  • 10:$3.0240
  • 1:$3.3700
IPW60R170CFD7XKSA1
DISTI # IPW60R170CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 170mΩ 75W 600V PG-TO 247-3 - Rail/Tube (Alt: IPW60R170CFD7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$1.4900
  • 2400:$1.4900
  • 480:$1.5900
  • 960:$1.5900
  • 240:$1.6900
IPW60R170CFD7XKSA1
DISTI # SP001617988		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 170mΩ 75W 600V PG-TO 247-3 (Alt: SP001617988)
RoHS: Compliant
Min Qty: 30		Europe - 0
  • 300:€1.3900
  • 180:€1.4900
  • 120:€1.5900
  • 60:€1.6900
  • 30:€2.0900
IPW60R170CFD7XKSA1
DISTI # 43AC9331		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.144ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes167
  • 500:$2.0200
  • 250:$2.2500
  • 100:$2.3800
  • 50:$2.5000
  • 25:$2.6300
  • 10:$2.7500
  • 1:$3.2300
IPW60R170CFD7XKSA1
DISTI # 726-IPW60R170CFD7XKS		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		359
  • 1:$3.2000
  • 10:$2.7200
  • 100:$2.3600
  • 250:$2.2300
  • 500:$2.0000
IPW60R170CFD7XKSA1
DISTI # 2807981		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-247185
  • 500:£1.4600
  • 250:£1.6300
  • 100:£1.7300
  • 10:£2.0000
  • 1:£2.6400
IPW60R170CFD7XKSA1
DISTI # 2807981		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-247
RoHS: Compliant		167
  • 1000:$2.4400
  • 500:$2.4800
  • 250:$2.6100
  • 100:$2.7600
  • 10:$3.1200
  • 1:$3.3400
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Disponibilità
Azione:
349
Su ordine:
2332
Inserisci la quantità:
Il prezzo attuale di IPW60R170CFD7XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
3,20 USD
3,20 USD
10
2,72 USD
27,20 USD
100
2,36 USD
236,00 USD
250
2,23 USD
557,50 USD
500
2,00 USD
1 000,00 USD
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