SIHH21N65EF-T1-GE3

SIHH21N65EF-T1-GE3
Mfr. #:
SIHH21N65EF-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHH21N65EF-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHH21N65EF-T1-GE3 DatasheetSIHH21N65EF-T1-GE3 Datasheet (P4-P6)SIHH21N65EF-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Maggiori informazioni:
SIHH21N65EF-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK-8x8-4
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
20.3 A
Rds On - Resistenza Drain-Source:
148 mOhms
Vgs th - Tensione di soglia gate-source:
4 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
66 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
156 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Serie:
EF
Marca:
Vishay / Siliconix
Tempo di caduta:
44 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
46 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
69 ns
Tempo di ritardo di accensione tipico:
26 ns
Tags
SIHH21N65, SIHH21, SIHH2, SIHH, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 19.8A 5-Pin PowerPAK EP T/R
***ronik
N-CH 700V 19,8A 157mOhm PPAK8x8
***ark
Mosfet, N-Ch, 650V, 19.8A, Powerpak-5; Transistor Polarity:n Channel; Continuous Drain Current Id:19.8A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.157Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ure Electronics
N-Channel 600 V 135 mOhm 77 nC SMT E Series Power Mosfet - PowerPAK 8x8
***el Electronic
VISHAY SIHH26N60E-T1-GE3 Power MOSFET, N Channel, 25 A, 600 V, 0.117 ohm, 10 V, 4 V
***nell
MOSFET, N-CH, 600V, 25A, POWERPAK-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.117ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 202W; Transistor Case Style: PowerPAK; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
***icroelectronics
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
***ure Electronics
N-Channel 600 V 130 mOhm Surface Mount DM2 Power Mosfet - D2PAK
***nell
MOSFET, N-CH, 600V, 24A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***r Electronics
Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Mosfet Transistor, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
*** Source Electronics
MOSFET N-CH 600V 21A D2PAK / Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 600 V 0.16 Ohm Surface Mount FDmesh II Power MosFet - D2PAK
***r Electronics
Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 600V, 21A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 160W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: FDmesh II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in D2PAK package
***ure Electronics
N-Channel 710 V 17 A 179 mOhm 125 W Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH Si 650V 17A 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N CH, 650V, 17A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK
*** Source Electronics
MOSFET N-CH 600V 20A D2PAK / Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
***roFlash
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
***ark
Channel Type:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:208W; No. Of Pins:3Pins Rohs Compliant: Yes
***nell
MOSFET, N CH, 600V, 20A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:60A
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ical
Trans MOSFET N-CH 500V 19A 3-Pin(2+Tab) D2PAK
*** Electronics
VISHAY SIHB20N50E-GE3 MOSFET, N CHANNEL, 500V, 19A, TO-263-3
***ure Electronics
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
***S
French Electronic Distributor since 1988
***nell
MOSFET, N CHANNEL, 500V, 19A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 179W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Parte # Mfg. Descrizione Azione Prezzo
SIHH21N65EF-T1-GE3
DISTI # SIHH21N65EF-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 650V 19.8A POWERPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3661In Stock
  • 1000:$3.5727
  • 500:$4.1020
  • 100:$4.7106
  • 10:$5.6900
  • 1:$6.3000
SIHH21N65EF-T1-GE3
DISTI # SIHH21N65EF-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 650V 19.8A POWERPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3661In Stock
  • 1000:$3.5727
  • 500:$4.1020
  • 100:$4.7106
  • 10:$5.6900
  • 1:$6.3000
SIHH21N65EF-T1-GE3
DISTI # SIHH21N65EF-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 650V 19.8A POWERPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 3000:$3.4172
SIHH21N65EF-T1-GE3
DISTI # SIHH21N65EF-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 19.8A 5-Pin PowerPAK T/R (Alt: SIHH21N65EF-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 50
  • 30000:€2.9900
  • 18000:€3.1900
  • 12000:€3.5900
  • 6000:€4.3900
  • 3000:€5.5900
SIHH21N65EF-T1-GE3
DISTI # SIHH21N65EF-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 19.8A 5-Pin PowerPAK T/R - Tape and Reel (Alt: SIHH21N65EF-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$3.0900
  • 18000:$3.1900
  • 12000:$3.2900
  • 6000:$3.3900
  • 3000:$3.4900
SIHH21N65EF-T1-GE3
DISTI # 01AC4964
Vishay IntertechnologiesMOSFET, N-CH, 650V, 19.8A, POWERPAK-5,Transistor Polarity:N Channel,Continuous Drain Current Id:19.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.157ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes21
  • 500:$3.3900
  • 250:$3.6600
  • 100:$3.8500
  • 50:$4.3400
  • 25:$4.6900
  • 10:$5.4300
  • 1:$5.7000
SIHH21N65EF-T1-GE3
DISTI # 20AC3833
Vishay IntertechnologiesN-CHANNEL 650V0
  • 20000:$3.0100
  • 12000:$3.0600
  • 8000:$3.1900
  • 4000:$3.4300
  • 2000:$3.6700
  • 1:$3.8500
SIHH21N65EF-T1-GE3
DISTI # 78-SIHH21N65EF-T1GE3
Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
RoHS: Compliant
0
  • 1:$6.8600
  • 10:$5.6800
  • 100:$4.6800
  • 250:$4.5300
  • 500:$4.0700
  • 1000:$3.4300
  • 3000:$3.2600
SIHH21N65EF-T1-GE3
DISTI # 2576523
Vishay IntertechnologiesMOSFET, N-CH, 650V, 19.8A, POWERPAK-5
RoHS: Compliant
21
  • 1000:$5.3900
  • 500:$6.1900
  • 100:$7.1000
  • 10:$8.5800
  • 1:$9.4900
SIHH21N65EF-T1-GE3
DISTI # 2576523
Vishay IntertechnologiesMOSFET, N-CH, 650V, 19.8A, POWERPAK-521
  • 1:£2.2700
SIHH21N65EF-T1-GE3
DISTI # TMOS1216
Vishay IntertechnologiesN-CH 700V 19,8A 157mOhm PPAK8x8
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 3000:$3.6900
SIHH21N65EF-T1-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
RoHS: Compliant
Americas -
    Immagine Parte # Descrizione
    SIHH21N65EF-T1-GE3

    Mfr.#: SIHH21N65EF-T1-GE3

    OMO.#: OMO-SIHH21N65EF-T1-GE3

    MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
    SIHH21N65E-T1-GE3

    Mfr.#: SIHH21N65E-T1-GE3

    OMO.#: OMO-SIHH21N65E-T1-GE3

    MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
    SIHH21N65EF

    Mfr.#: SIHH21N65EF

    OMO.#: OMO-SIHH21N65EF-1190

    Nuovo e originale
    SIHH21N65E-T1-GE3

    Mfr.#: SIHH21N65E-T1-GE3

    OMO.#: OMO-SIHH21N65E-T1-GE3-VISHAY

    Trans MOSFET N-CH 650V 20.3A 4-Pin PowerPAK EP T/R
    SIHH21N65EF-T1-GE3

    Mfr.#: SIHH21N65EF-T1-GE3

    OMO.#: OMO-SIHH21N65EF-T1-GE3-VISHAY

    MOSFET N-CH 650V 19.8A POWERPAK
    Disponibilità
    Azione:
    Available
    Su ordine:
    4500
    Inserisci la quantità:
    Il prezzo attuale di SIHH21N65EF-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    6,86 USD
    6,86 USD
    10
    5,68 USD
    56,80 USD
    100
    4,68 USD
    468,00 USD
    250
    4,53 USD
    1 132,50 USD
    500
    4,07 USD
    2 035,00 USD
    1000
    3,43 USD
    3 430,00 USD
    Iniziare con
    Prodotti più recenti
    Top