SIDR402DP-T1-GE3

Mfr. #:: SIDR402DP-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIDR402DP-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SIDR402DP-T1-GE3 Datasheet SIDR402DP-T1-GE3 Datasheet (P4-P6)SIDR402DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Maggiori informazioni:: SIDR402DP-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: PowerPAK-SO-8DC-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 40 V

Id - Corrente di scarico continua:: 100 A

Rds On - Resistenza Drain-Source:: 1.16 mOhms

Vgs th - Tensione di soglia gate-source:: 2.3 V

Vgs - Tensione Gate-Source:: 20 V, - 16 V

Qg - Carica cancello:: 53 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 125 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: TrenchFET

Confezione:: Bobina

Serie:: SID

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 147 S

Tempo di caduta:: 40 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 100 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 56 ns

Tempo di ritardo di accensione tipico:: 45 ns

Tags: SIDR, SID

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIDR402DP-T1-GE3 Descrizione

***ure Electronics: Single N-Channel 40 V 64.6 A 6.25 W Surface Mount Mosfet - POWERPAK-SO-8DC

***roFlash: TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R

***ark: Mosfet, N-Ch, 40V, 100A, 150Deg C, 125W; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.00073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Powerrohs Compliant: Yes

SIDR402DP-T1-GE3 Maggiori informazioni

TrenchFET® Gen IV Top-Side Double Cooling MOSFETs: Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIDR402DP-T1-GE3 DISTI # V36:1790_21749947	Vishay Intertechnologies	N-Channel 40 V (D-S) MOSFET	0
SIDR402DP-T1-GE3 DISTI # SIDR402DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CHAN 40V PPSO-8DC RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	6000:$1.1529 3000:$1.1673
SIDR402DP-T1-GE3 DISTI # SIDR402DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CHAN 40V PPSO-8DC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.2914 500:$1.5586 100:$1.8970 10:$2.3600 1:$2.6300
SIDR402DP-T1-GE3 DISTI # SIDR402DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CHAN 40V PPSO-8DC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.2914 500:$1.5586 100:$1.8970 10:$2.3600 1:$2.6300
SIDR402DP-T1-GE3 DISTI # SIDR402DP-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R (Alt: SIDR402DP-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1000:€1.0529 500:€1.0809 100:€1.0959 50:€1.1129 25:€1.2539 10:€1.5199 1:€2.1699
SIDR402DP-T1-GE3 DISTI # SIDR402DP-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIDR402DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$1.0549 30000:$1.0839 18000:$1.1149 12000:$1.1629 6000:$1.1979
SIDR402DP-T1-GE3 DISTI # 59AC7336	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) MOSFET	0	10000:$1.0300 6000:$1.0700 4000:$1.1200 2000:$1.2400 1000:$1.3100 1:$1.3900
SIDR402DP-T1-GE3 DISTI # 78AC6501	Vishay Intertechnologies	MOSFET, N-CH, 40V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V,PowerRoHS Compliant: Yes	0	500:$1.4500 250:$1.5600 100:$1.6600 50:$1.8200 25:$1.9800 10:$2.1400 1:$2.5800
SIDR402DP-T1-GE3 DISTI # 78-SIDR402DP-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC RoHS: Compliant	0	1:$2.5500 10:$2.1200 100:$1.6400 500:$1.4400 1000:$1.1900 3000:$1.1100 6000:$1.0700
SIDR402DP-T1-GE3 DISTI # 2932896	Vishay Intertechnologies	MOSFET, N-CH, 40V, 100A, 150DEG C, 125W	0	500:£1.0600 250:£1.1400 100:£1.2100 10:£1.5700 1:£2.1200
SIDR402DP-T1-GE3 DISTI # 2932896	Vishay Intertechnologies	MOSFET, N-CH, 40V, 100A, 150DEG C, 125W RoHS: Compliant	0	1000:$1.8900 500:$2.0000 250:$2.1300 100:$2.3100 10:$2.6600 1:$3.0500

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: SIDR402DP-T1-GE3

OMO.#: OMO-SIDR402DP-T1-GE3

MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC

Mfr.#: SIDR402DP

OMO.#: OMO-SIDR402DP-1190

Nuovo e originale

Mfr.#: SIDR402DP-T1-GE3

OMO.#: OMO-SIDR402DP-T1-GE3-VISHAY

MOSFET N-CHAN 40V PPSO-8DC

Disponibilità

Azione:: Available
Su ordine:: 5000
Inserisci la quantità:

Il prezzo attuale di SIDR402DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~2,55 USD~~; ~~2,55 USD~~

10: ~~2,12 USD~~; ~~21,20 USD~~

100: ~~1,64 USD~~; ~~164,00 USD~~

500: ~~1,44 USD~~; ~~720,00 USD~~

1000: ~~1,19 USD~~; ~~1 190,00 USD~~

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SIDR402DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes