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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SUP50N10-21P-GE3 DISTI # SUP50N10-21P-GE3-ND | Vishay Siliconix | MOSFET N-CH 100V 50A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube | 150In Stock |
|
| SUP50N10-21P-GE3 DISTI # 78-SUP50N10-21P-GE3 | Vishay Intertechnologies | MOSFET 100V N-Channel RoHS: Compliant | 51 |
|
| SUP50N10-21P-GE3 DISTI # TMOSP11137 | Vishay Intertechnologies | N-CH 100V 50A 21mOhm TO220 RoHS: Compliant | Stock DE - 0Stock US - 0 |
|
| SUP50N1021PGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Europe - 500 | |
| SUP50N10-21P-GE3 | Vishay Intertechnologies | MOSFET 100V N-Channel | Americas - |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SUP50N10-21P-GE3 OMO.#: OMO-SUP50N10-21P-GE3 |
MOSFET 100V N-Channel |
|
Mfr.#: SUP50N10-21P OMO.#: OMO-SUP50N10-21P-1190 |
Nuovo e originale |
|
Mfr.#: SUP50N10-21P-GE3 OMO.#: OMO-SUP50N10-21P-GE3-VISHAY |
MOSFET N-CH 100V 50A TO220AB |
|
|
Mfr.#: SUP50N1021PGE3 OMO.#: OMO-SUP50N1021PGE3-1190 |
Power Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |