SUP50N10-21P-GE3

SUP50N10-21P-GE3
Mfr. #:
SUP50N10-21P-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 100V N-Channel
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SUP50N10-21P-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SUP50N10-21P-GE3 DatasheetSUP50N10-21P-GE3 Datasheet (P4-P6)SUP50N10-21P-GE3 Datasheet (P7)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
50 A
Rds On - Resistenza Drain-Source:
17 mOhms
Vgs th - Tensione di soglia gate-source:
2 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
68 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
125 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
TrenchFET
Confezione:
Tubo
Serie:
SUP
Tipo di transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
40 S
Tempo di caduta:
7 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
10 ns
Quantità confezione di fabbrica:
50
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
22 ns
Tempo di ritardo di accensione tipico:
10 ns
Parte # Alias:
SUP40N10-30-GE3
Unità di peso:
0.211644 oz
Tags
SUP50N1, SUP50N, SUP50, SUP5, SUP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 0.021 O 30.2 nC Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH 100V 50A 3-Pin(3+Tab) TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***et
Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-220AB
***i-Key
MOSFET N-CH 100V 60A TO220AB
***nell
N CHANNEL MOSFET, 100V, 60A; Transistor; N CHANNEL MOSFET, 100V, 60A; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 18.3mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; No. of Pins: 3
***i-Key
MOSFET N-CH 100V 54A TO220-3
*** Electronics
N-CHANNEL POWER MOSFET
***et Europe
Trans MOSFET N-CH 100V 47A 3-Pin TO-220AB Tube
*** Electronics
MOSFET SIPMOS PWR-TRANS 100V 47A
***ineon
Summary of Features: N-Channel; Enhancement mode; Logic Level; 175C operating temperature; Avalanche rated; dv/dt rated; Green Package (lead free) | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
***ure Electronics
Single N-Channel 100 V 2.8 W 31.9 nC Silicon Through Hole Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-220AB Tube
***des Inc SCT
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS
***et
MOSFET BVDSS: 61V~100V TO220-3 TUBE 50PCS
***ure Electronics
Single N-Channel 75 V 10.6 mOhm 55 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH 75V 59A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 99 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 59A I(D), 75V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 75V, 59A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 59A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0106ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;
***ineon
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
***ure Electronics
FDPF085N10A Series 100 V 40 A 8.5 mOhm N-Ch PowerTrench® MOSFET - TO-220F
***emi
N-Channel PowerTrench® MOSFET 100V, 40A, 8.5mΩ
***Yang
Trans MOSFET N-CH 100V 40A 3-Pin(3+Tab) TO-220F T/R - Rail/Tube
***nell
MOSFET, N-CH, 100V, 40A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
*** Stop Electro
Power Field-Effect Transistor, 40A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Parte # Mfg. Descrizione Azione Prezzo
SUP50N10-21P-GE3
DISTI # SUP50N10-21P-GE3-ND
Vishay SiliconixMOSFET N-CH 100V 50A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
150In Stock
  • 100:$1.2667
  • 10:$1.6030
  • 1:$1.8100
SUP50N10-21P-GE3
DISTI # 78-SUP50N10-21P-GE3
Vishay IntertechnologiesMOSFET 100V N-Channel
RoHS: Compliant
51
  • 1:$1.6500
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.8940
  • 1000:$0.7050
SUP50N10-21P-GE3
DISTI # TMOSP11137
Vishay IntertechnologiesN-CH 100V 50A 21mOhm TO220
RoHS: Compliant
Stock DE - 0Stock US - 0
  • 500:$0.9915
  • 1000:$0.7649
SUP50N1021PGE3Vishay IntertechnologiesPower Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
Europe - 500
    SUP50N10-21P-GE3Vishay IntertechnologiesMOSFET 100V N-ChannelAmericas -
      Immagine Parte # Descrizione
      34959-0340

      Mfr.#: 34959-0340

      OMO.#: OMO-34959-0340-393

      Conn Housing RCP 34 POS 2mm ST Cable Mount Bag - Bulk (Alt: 0349590340)
      34961-0340

      Mfr.#: 34961-0340

      OMO.#: OMO-34961-0340-393

      Conn Shrouded Header HDR 34 POS 2mm Solder RA Thru-Hole Tray - Bulk (Alt: 34961-0340)
      EP2-3N1S

      Mfr.#: EP2-3N1S

      OMO.#: OMO-EP2-3N1S-642

      Automotive Relays 1 FORM CX2 BRIDGE
      EEH-ZC1K470P

      Mfr.#: EEH-ZC1K470P

      OMO.#: OMO-EEH-ZC1K470P-PANASONIC

      HYBRID ZC SERIES
      CRCW12069K10FKEAC

      Mfr.#: CRCW12069K10FKEAC

      OMO.#: OMO-CRCW12069K10FKEAC-VISHAY-DALE

      D25/CRCW1206-C 100 9K1 1% ET1
      CRCW120651K1FKEAC

      Mfr.#: CRCW120651K1FKEAC

      OMO.#: OMO-CRCW120651K1FKEAC-VISHAY-DALE

      D25/CRCW1206-C 100 51K1 1% ET1
      CRCW120610K0FKEAC

      Mfr.#: CRCW120610K0FKEAC

      OMO.#: OMO-CRCW120610K0FKEAC-VISHAY-DALE

      D25/CRCW1206-C 100 10K 1% ET1
      EMHS800ARA181MKE0S

      Mfr.#: EMHS800ARA181MKE0S

      OMO.#: OMO-EMHS800ARA181MKE0S-UNITED-CHEMI-CON

      Aluminum Electrolytic Capacitors - SMD 180uF 20% 80V AEC-Q200
      Disponibilità
      Azione:
      Available
      Su ordine:
      1984
      Inserisci la quantità:
      Il prezzo attuale di SUP50N10-21P-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Iniziare con
      Prodotti più recenti
      Top