IRFP4232PBF

IRFP4232PBF
Mfr. #:
IRFP4232PBF
Produttore:
Infineon / IR
Descrizione:
MOSFET 250V 1 N-CH PLASMA DISPLAY PANEL HEXFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFP4232PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFP4232PBF DatasheetIRFP4232PBF Datasheet (P4-P6)IRFP4232PBF Datasheet (P7-P8)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
250 V
Id - Corrente di scarico continua:
60 A
Rds On - Resistenza Drain-Source:
35.7 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
160 nC
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
430 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
20.7 mm
Lunghezza:
15.87 mm
Tipo di transistor:
1 N-Channel
Tipo:
Interruttore PDP
Larghezza:
5.31 mm
Marca:
Infineon / IR
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
25
sottocategoria:
MOSFET
Parte # Alias:
SP001571078
Unità di peso:
1.340411 oz
Tags
IRFP42, IRFP4, IRFP, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 30Milliohms;ID 60A;TO-247AC;PD 430W;VF 1V
***ure Electronics
Single N-Channel 250 V 35.7 mOhm 160 nC HEXFET® Power Mosfet - TO-247-3AC
***el Electronic
INTERNATIONAL RECTIFIER IRFP4232PBF MOSFET Transistor, N Channel, 60 A, 250 V, 0.03 ohm, 10 V, 5 V
***ernational Rectifier
250V Single N-Channel Plasma Display Panel HEXFET Power MOSFET in a TO-247AC package
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:250V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:430W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:60A; Package / Case:TO-247AC; Power Dissipation Pd:430W; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descrizione Azione Prezzo
IRFP4232PBF
DISTI # IRFP4232PBF-ND
Infineon Technologies AGMOSFET N-CH 250V 60A TO-247AC
RoHS: Compliant
Min Qty: 4000
Container: Bag
Limited Supply - Call
    IRFP4232PBF
    DISTI # 70017555
    Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 250V,RDS(ON) 30 Milliohms,ID 60A,TO-247AC,PD 430W,VF 1V
    RoHS: Compliant
    0
    • 1:$4.5000
    • 10:$4.0500
    • 25:$3.6900
    • 100:$3.3800
    • 250:$3.1200
    IRFP4232PBF
    DISTI # 942-IRFP4232PBF
    Infineon Technologies AGMOSFET 250V 1 N-CH PLASMA DISPLAY PANEL HEXFET
    RoHS: Compliant
    0
      IRFP4232PBF
      DISTI # 1611482
      Infineon Technologies AGMOSFET, N
      RoHS: Compliant
      0
      • 1:$6.0300
      • 10:$5.6600
      • 100:$5.1200
      • 250:$4.9400
      • 500:$4.6800
      • 1000:$4.6800
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      Mfr.#: IRFP460APBF.

      OMO.#: OMO-IRFP460APBF--1190

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      Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      1500
      Inserisci la quantità:
      Il prezzo attuale di IRFP4232PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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