SI2316DS-T1-GE3

Mfr. #:: SI2316DS-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 30V 3.4A 0.96W 50mohm @ 10V
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI2316DS-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SI2316DS-T1-GE3 Datasheet SI2316DS-T1-GE3 Datasheet (P4-P6)SI2316DS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Maggiori informazioni:: SI2316DS-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Nome depositato:: TrenchFET

Confezione:: Bobina

Serie:: SI2

Marca:: Vishay / Siliconix

Tipologia di prodotto:: MOSFET

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Parte # Alias:: SI2316DS-GE3

Unità di peso:: 0.000282 oz

Tags: SI2316D, SI2316, SI231, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2316DS-T1-GE3 Descrizione

***et Europe: Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R

***i-Key: MOSFET N-CH 30V 2.9A SOT23-3

***: N-CHANNEL 30-V (D-S) MOSFET

***ark: N CHANNEL MOSFET, 30V, 3.4A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.4A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:0.8V ;RoHS Compliant: Yes

SI2316DS-T1-GE3 Maggiori informazioni

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI2316DS-T1-GE3 DISTI # V36:1790_09216801	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000000:$0.2454 1500000:$0.2456 300000:$0.2511 30000:$0.2588 3000:$0.2600
SI2316DS-T1-GE3 DISTI # SI2316DS-T1-GE3-ND	Vishay Siliconix	MOSFET N-CH 30V 2.9A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.2741
SI2316DS-T1-GE3 DISTI # SI2316DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R (Alt: SI2316DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2599 18000:€0.2789 12000:€0.3019 6000:€0.3509 3000:€0.5149
SI2316DS-T1-GE3 DISTI # SI2316DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2316DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2299 18000:$0.2369 12000:$0.2429 6000:$0.2539 3000:$0.2619
SI2316DS-T1-GE3 DISTI # 12R3248	Vishay Intertechnologies	N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:960mW RoHS Compliant: Yes	0	2500:$0.3100 1000:$0.3910 500:$0.4450 250:$0.5190 100:$0.5840 50:$0.6590 25:$0.7240 1:$0.8070
SI2316DS-T1-GE3 DISTI # 781-SI2316DS-GE3	Vishay Intertechnologies	MOSFET 30V 3.4A 0.96W 50mohm @ 10V RoHS: Compliant	0	3000:$0.2600 6000:$0.2430 9000:$0.2340
SI2316DS-T1-GE3	Vishay Intertechnologies		2629
SI2316DS-T1-GE3	Vishay Intertechnologies	MOSFET 30V 3.4A 0.96W 50mohm @ 10V RoHS: Compliant	Americas -

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI2316DS-T1-E3 OMO.#: OMO-SI2316DS-T1-E3	MOSFET 30V 3.4A 0.96W 50mohm @ 10V
	Mfr.#: SI2316DS-T1-GE3 OMO.#: OMO-SI2316DS-T1-GE3	MOSFET 30V 3.4A 0.96W 50mohm @ 10V
	Mfr.#: SI2316DS-T1 OMO.#: OMO-SI2316DS-T1-1190	MOSFET RECOMMENDED ALT 781-SI2316BDS-E3
	Mfr.#: SI2316DS-T1-E3 OMO.#: OMO-SI2316DS-T1-E3-VISHAY	MOSFET N-CH 30V 2.9A SOT23-3
	Mfr.#: SI2316DS-T1-GE3 OMO.#: OMO-SI2316DS-T1-GE3-VISHAY	MOSFET N-CH 30V 2.9A SOT23-3
	Mfr.#: SI2316DS-T1-E3-CUT TAPE OMO.#: OMO-SI2316DS-T1-E3-CUT-TAPE-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 3000
Inserisci la quantità:

Il prezzo attuale di SI2316DS-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Iniziare con

SI2316D 4
SI2316 9
SI231 94
SI23 561
SI2 1125

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SI2316DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes