SPD02N50C3

Mfr. #:: SPD02N50C3
Produttore:: Infineon Technologies
Descrizione:: IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SPD02N50C3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: INFINEON

categoria di prodotto: FET - Single

Serie: CoolMOS C3

Confezione: Bobina

Alias parziali: SP000313942 SPD02N50C3BTMA1 SPD02N50C3XT

Unità di peso: 0.139332 oz

Stile di montaggio: SMD/SMT

Nome depositato: CoolMOS

Pacchetto-Custodia: TO-252-3

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Separare

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 25 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 15 ns

Ora di alzarsi: 5 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 1.8 A

Vds-Drain-Source-Breakdown-Voltage: 500 V

Rds-On-Drain-Source-Resistenza: 3 Ohms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 70 ns

Tempo di ritardo all'accensione tipico: 10 ns

Modalità canale: Aumento

Tags: SPD02N5, SPD02N, SPD02, SPD0, SPD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPD02N50C3 Descrizione

***ure Electronics: N-Channel 560 V 3 Ohm Cool MOS Power Transistor - PG-TO252-3

***ical: Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R

***p One Stop Global: Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) TO-252

***et Europe: Trans MOSFET N-CH 500V 1.8A 3-Pin TO-252 T/R

***ark: MOSFET, N CHANNEL, 560V, 1.8A, TO-252

***i-Key: LOW POWER_LEGACY

***ineon: Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***ment14 APAC: Prices include import duty and tax. MOSFET, N, 500V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:1.8A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:5.4A; Termination Type:Surface Mount Device; Voltage Vds:500V; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N, 500V, D-PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:1.8A; Tensione Drain Source Vds:500V; Resistenza di Attivazione Rds(on):2.7ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:25W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:1.8A; Corrente di Impulso Idm:5.4A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds:500V; Tensione Vds Tipica:560V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SPD02N50C3BTMA1 DISTI # V72:2272_06384768	Infineon Technologies AG	Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2200	75000:$0.4733 30000:$0.4735 15000:$0.4764 6000:$0.4829 3000:$0.4864 1000:$0.4950 500:$0.5222 250:$0.5928 100:$0.6469 50:$0.6936 25:$0.8102 10:$0.8295 1:$0.9367
SPD02N50C3 DISTI # SPD02N50C3INTR-ND	Infineon Technologies AG	MOSFET N-CH 560V 1.8A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SPD02N50C3BTMA1 DISTI # SPD02N50C3BTMA1-ND	Infineon Technologies AG	LOW POWER_LEGACY RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SPD02N50C3BTMA1 DISTI # 27619286	Infineon Technologies AG	Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2200	1000:$0.4950 500:$0.5222 250:$0.5928 100:$0.6469 50:$0.6936 25:$0.8102 16:$0.8295
SPD02N50C3 DISTI # 726-SPD02N50C3	Infineon Technologies AG	MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3 RoHS: Compliant	2200	1:$0.9700 10:$0.8270 100:$0.6350 500:$0.5610 1000:$0.4430 2500:$0.3930
SPD02N50C3BTMA1 DISTI # N/A	Infineon Technologies AG	MOSFET LOW POWER_LEGACY	0
SPD02N50C3	Infineon Technologies AG	Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	69500	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
SPD02N50C3BTMA1	Infineon Technologies AG	Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	160000	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
SPD02N50C3 DISTI # 1471785	Infineon Technologies AG	MOSFET, N, 500V, D-PAK RoHS: Compliant	0	1:$1.5400 10:$1.3200 100:$1.0100 500:$0.8880 1000:$0.7020 2500:$0.6320
SPD02N50C3 DISTI # 1471785RL	Infineon Technologies AG	MOSFET, N, 500V, D-PAK RoHS: Compliant	0	1:$1.5400 10:$1.3200 100:$1.0100 500:$0.8880 1000:$0.7020 2500:$0.6320

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SPD02N60C3BTMA1 OMO.#: OMO-SPD02N60C3BTMA1	MOSFET LOW POWER_LEGACY
	Mfr.#: SPD02N50C3 OMO.#: OMO-SPD02N50C3-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3
	Mfr.#: SPD02N80C3ATMA1-CUT TAPE OMO.#: OMO-SPD02N80C3ATMA1-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SPD02N80C3ATMA1 OMO.#: OMO-SPD02N80C3ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 800V 2A 3TO252
	Mfr.#: SPD02N50C3. OMO.#: OMO-SPD02N50C3--1190	Nuovo e originale
	Mfr.#: SPD02N50C3BTMA1 OMO.#: OMO-SPD02N50C3BTMA1-INFINEON-TECHNOLOGIES	LOW POWER_LEGACY
	Mfr.#: SPD02N60C3_05 OMO.#: OMO-SPD02N60C3-05-1190	Nuovo e originale
	Mfr.#: SPD02N60S5 02N60S5 OMO.#: OMO-SPD02N60S5-02N60S5-1190	Nuovo e originale
	Mfr.#: SPD02N60S5BTMA1 OMO.#: OMO-SPD02N60S5BTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 1.8A TO-252
	Mfr.#: SPD02N80 OMO.#: OMO-SPD02N80-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 5500
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Il prezzo attuale di SPD02N50C3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,57 USD~~; ~~0,57 USD~~

10: ~~0,54 USD~~; ~~5,42 USD~~

100: ~~0,51 USD~~; ~~51,30 USD~~

500: ~~0,48 USD~~; ~~242,25 USD~~

1000: ~~0,46 USD~~; ~~456,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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SPD02N50C3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes