SI4922BDY-T1-GE3

Mfr. #:: SI4922BDY-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 30V 8.0A 3.1W 16mohm @ 10V
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI4922BDY-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4922BDY-T1-GE3 Datasheet SI4922BDY-T1-GE3 Datasheet (P4-P6)SI4922BDY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Maggiori informazioni:: SI4922BDY-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: E

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SO-8

Nome depositato:: TrenchFET

Confezione:: Bobina

Serie:: SI4

Marca:: Vishay / Siliconix

Tipologia di prodotto:: MOSFET

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Parte # Alias:: SI4922BDY-GE3

Unità di peso:: 0.006596 oz

Tags: SI4922B, SI4922, SI492, SI49, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4922BDY-T1-GE3 Descrizione

***ure Electronics: Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin SOIC T/R - Tape and Reel

***: 30V N-CHANNEL DUAL

***ment14 APAC: DUAL N CHANNEL MOSFET, 30V, 8A; Transist; DUAL N CHANNEL MOSFET, 30V, 8A; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0135ohm; Rds(on) Test Voltage Vgs:2.5V

SI4922BDY-T1-GE3 Maggiori informazioni

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI4922BDY-T1-GE3 DISTI # SI4922BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.7871
SI4922BDY-T1-GE3 DISTI # SI4922BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2500In Stock	1000:$0.8707 500:$1.0509 100:$1.3511 10:$1.6810 1:$1.8600
SI4922BDY-T1-GE3 DISTI # SI4922BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2500In Stock	1000:$0.8707 500:$1.0509 100:$1.3511 10:$1.6810 1:$1.8600
SI4922BDY-T1-GE3 DISTI # SI4922BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4922BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.7549 5000:$0.7319 10000:$0.7029 15000:$0.6829 25000:$0.6649
SI4922BDY-T1-GE3 DISTI # 781-SI4922BDY-GE3	Vishay Intertechnologies	MOSFET 30V 8.0A 3.1W 16mohm @ 10V RoHS: Compliant	2500	1:$1.6200 10:$1.3400 100:$1.0400 500:$0.9090 1000:$0.7530 2500:$0.7010
SI4922BDY-T1-GE3	Vishay Intertechnologies	MOSFET 30V 8.0A 3.1W 16mohm @ 10V	Americas -

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI4922BDY-T1-E3 OMO.#: OMO-SI4922BDY-T1-E3	MOSFET DUAL N-CH 30V(D-S)
	Mfr.#: SI4922BDY-T1-GE3 OMO.#: OMO-SI4922BDY-T1-GE3	MOSFET 30V 8.0A 3.1W 16mohm @ 10V
	Mfr.#: SI4922BDY-T1-GE3 OMO.#: OMO-SI4922BDY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 8.0A 3.1W 16mohm @ 10V
	Mfr.#: SI4922BDY-T1-E3-CUT TAPE OMO.#: OMO-SI4922BDY-T1-E3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SI4922BDY-T1-E3 OMO.#: OMO-SI4922BDY-T1-E3-VISHAY	MOSFET 2N-CH 30V 8A 8-SOIC

Disponibilità

Azione:: Available
Su ordine:: 1985
Inserisci la quantità:

Il prezzo attuale di SI4922BDY-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,64 USD~~; ~~1,64 USD~~

10: ~~1,36 USD~~; ~~13,60 USD~~

100: ~~1,06 USD~~; ~~106,00 USD~~

500: ~~0,93 USD~~; ~~463,50 USD~~

1000: ~~0,77 USD~~; ~~768,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

SI4922B 3
SI4922 11
SI492 57
SI49 329
SI4 2994

Prodotti più recenti

SiP32431/SiP32432 Load Switch

Vishay's SiP32431 and SiP32432 are ultra-low leakage and quiescent current slew rate controlled high side switches with reverse blocking capability.
50 A VRPower® Solution (DrMOS)

Vishay's VRPower® Solution solution that integrates a high- and low-side MOSFET and a MOSFET driver, optimized for synchronous buck applications.
SIC46 microBUCK Series

Vishay Siliconix's SiC46 high efficiency synchronous buck regulators with integrated high-side and low-side power MOSFETs.
Compare SI4922BDY-T1-GE3

SI4922BDYT1E3 vs SI4922BDYT1E3CUTTAPE vs SI4922BDYT1GE3
SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE

Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.

More Newest Products

SI4922BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes