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NGTB75N60SWG

NGTB75N60SWG
Mfr. #:
NGTB75N60SWG
Produttore:
ON Semiconductor
Descrizione:
IGBT Transistors FSII 75A 600V Welding
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NGTB75N60SWG Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB75N60SWG DatasheetNGTB75N60SWG Datasheet (P4-P5)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione di saturazione collettore-emettitore:
1.7 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
100 A
Pd - Dissipazione di potenza:
595 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Tubo
Corrente continua del collettore Ic Max:
75 A
Marca:
ON Semiconductor
Corrente di dispersione gate-emettitore:
200 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
30
sottocategoria:
IGBT
Unità di peso:
1.340411 oz
Tags
NGTB75N60, NGTB7, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
ON SEMICONDUCTOR NGTB75N60SWG IGBT Single Transistor, 100 A, 1.7 V, 595 W, 600 V, TO-247, 3 Pins
***ark
Igbt, Single, 600V, 100A, To-247-3
***nell
IGBT, SINGLE, 600V, 100A, TO-247-3; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 595W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Parte # Mfg. Descrizione Azione Prezzo
NGTB75N60SWG
DISTI # V99:2348_07318067		ON SemiconductorTrans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		30
  • 100:$3.8210
  • 25:$4.1730
  • 10:$4.3080
  • 1:$4.5670
NGTB75N60SWG
DISTI # V36:1790_07318067		ON SemiconductorTrans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    NGTB75N60SWG
    DISTI # NGTB75N60SWGOS-ND    		ON SemiconductorIGBT 75A 600V TO-247
    RoHS: Compliant
    Min Qty: 60
    Container: Tube    		Limited Supply - Call
    • 60:$5.8305
    NGTB75N60SWG
    DISTI # 25863792    		ON SemiconductorTrans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		30
    • 100:$4.1076
    • 25:$4.4860
    • 10:$4.6311
    • 2:$4.9095
    NGTB75N60SWG
    DISTI # NGTB75N60SWG    		ON SemiconductorTrans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Rail (Alt: NGTB75N60SWG)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€5.6200
    • 10:€4.3800
    • 100:€3.8000
    • 250:€3.6300
    • 500:€3.3000
    • 1000:€2.8000
    NGTB75N60SWG
    DISTI # NGTB75N60SWG    		ON SemiconductorTrans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Rail - Bulk (Alt: NGTB75N60SWG)
    Min Qty: 87
    Container: Bulk    		Americas - 0
    • 87:$3.6900
    • 89:$3.6900
    • 176:$3.6900
    • 435:$3.5900
    • 870:$3.4900
    NGTB75N60SWG
    DISTI # 863-NGTB75N60SWG    		ON SemiconductorIGBT Transistors FSII 75A 600V Welding
    RoHS: Compliant    		138
    • 1:$6.1800
    • 10:$5.5900
    • 25:$5.3300
    • 100:$4.6200
    • 250:$4.4200
    • 500:$4.0300
    • 1000:$3.5100
    NGTB75N60SWGON SemiconductorInsulated Gate Bipolar Transistor
    RoHS: Compliant    		930
    • 1000:$3.8000
    • 500:$4.0000
    • 100:$4.1700
    • 25:$4.3500
    • 1:$4.6800
    NGTB75N60SWG
    DISTI # 2492863    		ON SemiconductorIGBT, SINGLE, 600V, 100A, TO-247-3
    RoHS: Compliant    		12
    • 2500:$5.0900
    • 1000:$5.2900
    • 500:$6.0700
    • 250:$6.6600
    • 100:$6.9600
    • 25:$8.0300
    • 10:$8.4200
    • 1:$9.3100
    NGTB75N60SWG
    DISTI # 2492863    		ON SemiconductorIGBT, SINGLE, 600V, 100A, TO-247-3
    RoHS: Compliant    		12
    • 500:£3.2200
    • 250:£3.3800
    • 100:£3.5300
    • 10:£4.0700
    • 1:£5.2200
    Immagine Parte # Descrizione
    CSD19532KTTT

    Mfr.#: CSD19532KTTT

    OMO.#: OMO-CSD19532KTTT

    		 MOSFET 100V, N-channel NexFET Pwr MOSFET
    CSD19532KTTT

    Mfr.#: CSD19532KTTT

    OMO.#: OMO-CSD19532KTTT-TEXAS-INSTRUMENTS

    		 MOSFET N-CH 100V TO-263-3
    Disponibilità
    Azione:
    138
    Su ordine:
    2121
    Inserisci la quantità:
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