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FDD6688S

FDD6688S
Mfr. #:
FDD6688S
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 30V N-CH DPAK POWER TRENCH SYNCFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDD6688S Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
88 A
Rds On - Resistenza Drain-Source:
4 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
69 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Altezza:
2.39 mm
Lunghezza:
6.73 mm
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET
Larghezza:
6.22 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
88 S
Tempo di caduta:
64 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
13 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
31 ns
Tempo di ritardo di accensione tipico:
13 ns
Parte # Alias:
FDD6688S_NL
Unità di peso:
0.139332 oz
Tags
FDD6688, FDD668, FDD66, FDD6, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Trans MOSFET N-CH 30V 84A 3-Pin(2+Tab) TO-252AA T/R - Bulk
***i-Key
MOSFET N-CH 30V 88A D-PAK
***ser
MOSFETs 30V,N-CH,DPAK,POWER TRENCH SYNCFET
***el Nordic
Contact for details
***ark
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),TO-252AA
***emi
PowerTrench® MOSFET, N-Channel, 30V, 94A, 4.7mΩ
***ment14 APAC
MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Source Voltage Vds:30V; On Resistance
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***nell
MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 94A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ark
Transistor,mosfet,n-Channel,30V V(Br)Dss,84A I(D),to-252Aa Rohs Compliant: Yes
***emi
N-Channel PowerTrench® MOSFET, 30V, 84A, 5mΩ
***ure Electronics
Single N-Channel 30 V 10 mOhm 56 nC 83 W PowerTrench SMT Mosfet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 84A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***el Electronic
Transistors - IGBTs - Modules 1 (Unlimited) Half Bridge Module No Standard Chassis Mount 6.5V @ 15V, 150A 1mA -40°C~150°C TJ POWEREX CM150DU-24NFH IGBT MODULE, 1.2KV, 150A
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***et
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.001uF 50 volts 10%
***nell
MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Po
***Yang
N-Channel 30V 84A (Ta) 83W (Ta) Surface Mount D-PAK (TO-252AA) - Bulk
***inecomponents.com
30V N-Channel PowerTrench MOSFET
***ter Electronics
30V/16V, 5/6MO, NCH, SINGLE, DPAK, 400A GOX, PTIII
***ark
; Transistor Type:MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
***el Electronic
Coaxial Connectors (RF) - Terminators Adapter, Jack to Plug Not Applicable BNC Free Hanging (In-Line) 75 Ω 2002 2 Weeks Brass Attenuators - Interconnects 75 OHM M/F ATTENUATR
***nell
MOSFET, N, SMD, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0057ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 1.5V; Power Dissipa
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 94A, 6 MOHM, 22 NC QG, D-PAK, Pb-Free
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ment14 APAC
MOSFET, N, 30V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:89mW; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:8113; Current Id Max:94A; Package / Case:DPAK; Power Dissipation Pd:89mW; Pulse Current Idm:380A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.25V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descrizione Azione Prezzo
FDD6688S
DISTI # FDD6688S-ND		ON SemiconductorMOSFET N-CH 30V 88A D-PAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDD6688S
    DISTI # 512-FDD6688S    		ON SemiconductorMOSFET 30V N-CH DPAK POWER TRENCH SYNCFET
    RoHS: Compliant    		0
      FDD6688SFairchild Semiconductor CorporationPower Field-Effect Transistor, 88A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant      		6966
      • 1000:$1.2600
      • 500:$1.3300
      • 100:$1.3800
      • 25:$1.4400
      • 1:$1.5600
      Immagine Parte # Descrizione
      FDD6N25TM

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      OMO.#: OMO-FDD6030BL-1190

      		 MOSFET 30V N-Ch PowerTrench
      FDD6030BLFSC

      Mfr.#: FDD6030BLFSC

      OMO.#: OMO-FDD6030BLFSC-1190

      		 Nuovo e originale
      FDD6632-NL

      Mfr.#: FDD6632-NL

      OMO.#: OMO-FDD6632-NL-1190

      		 Nuovo e originale
      FDD6670S

      Mfr.#: FDD6670S

      OMO.#: OMO-FDD6670S-1190

      		 MOSFET 30V N-Ch PowerTrench
      FDD6685_Q

      Mfr.#: FDD6685_Q

      OMO.#: OMO-FDD6685-Q-1190

      		 Nuovo e originale
      FDD6690S-NL

      Mfr.#: FDD6690S-NL

      OMO.#: OMO-FDD6690S-NL-1190

      		 Nuovo e originale
      FDD6N50FTM-CUT TAPE

      Mfr.#: FDD6N50FTM-CUT TAPE

      OMO.#: OMO-FDD6N50FTM-CUT-TAPE-1190

      		 Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      5000
      Inserisci la quantità:
      Il prezzo attuale di FDD6688S è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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