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FDD6N25TM

FDD6N25TM
Mfr. #:
FDD6N25TM
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 250V N-CH MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDD6N25TM Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
250 V
Id - Corrente di scarico continua:
4.4 A
Rds On - Resistenza Drain-Source:
900 mOhms
Vgs - Tensione Gate-Source:
30 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
50 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Altezza:
2.39 mm
Lunghezza:
6.73 mm
Serie:
FDD6N25
Tipo di transistor:
1 N-Channel
Larghezza:
6.22 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
5.5 S
Tempo di caduta:
12 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
25 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
7 ns
Tempo di ritardo di accensione tipico:
10 ns
Unità di peso:
0.009184 oz
Tags
FDD6N25TM, FDD6N25T, FDD6N25, FDD6N2, FDD6N, FDD6, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM, 250 V, 4.4 A, 1.1 Ω, DPAK
***ure Electronics
N-Channel 250 V 1.1 Ohm Surface Mount UniFET Mosfet DPAK
***ment14 APAC
MOSFET, N-CH, 250V, 4.4A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Source Voltage Vds:250V; On Resistance
***roFlash
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N TO-252 SMD; Transistor Polarity:N; Current, Id Cont:4.4A; Resistance, Rds On:1.1ohm; Case Style:DPAK; Termination Type:SMD; Current, Idm Pulse:18A; No. of Pins:2; Power Dissipation:50mW; Voltage, Vds Max:250V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 200V, 4.5A, 800mΩ, DPAK
***ure Electronics
N-Channel 200 V 0.8 Ohm Surface Mount UniFET Mosfet DPAK
***nell
MOSFET, N CH, 200V, 4.5A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:40W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 200 V, 5 A, 690 mΩ, DPAK
***ure Electronics
N-Channel 200 V 0.69 Ohm Surface Mount UniFET Mosfet TO-252-3
***ment14 APAC
MOSFET, N-CH, 200V, 5A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Source Voltage Vds:200V; On Resistance
***r Electronics
Power Field-Effect Transistor, 5A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
PMIC - AC DC Converters, Offline Switchers 4 (72 Hours) 8-SMD (7 Leads), Gull Wing Tape & Reel (TR) Buck, Buck-Boost, Flyback Surface Mount -40°C~150°C TJ Yes Non-Isolated Current Limiting, Open Loop, Over Load, Over Temperature, Over VolConv AC-DC Single Buck/Buck-Boost/Flyback 85VAC to 265VAC 7-Pin SMD-8C T/R
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, 250 V, 4.4 A, 1 Ω, DPAK
***r Electronics
Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***th Star Micro
Transistor MOSFET N-CH 200V 4.8A 3-Pin (2+Tab) DPAK
***ure Electronics
Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:4.8A; On Resistance, Rds(on):800mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 200V, 4.8A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.8A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:19A; SMD Marking:IRFR220; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ark
Channel Type:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:42W; No. Of Pins:3Pins Rohs Compliant: No
***ure Electronics
Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252
***ical
Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R
***ark
Mosfet N-Channel 200V Rohs Compliant: No
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Parte # Mfg. Descrizione Azione Prezzo
FDD6N25TM
DISTI # V36:1790_06300642		ON SemiconductorTrans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R22500
  • 2500:$0.2021
FDD6N25TM
DISTI # V72:2272_06300642		ON SemiconductorTrans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R1000
  • 1000:$0.2404
  • 500:$0.3009
  • 250:$0.3011
  • 100:$0.3012
  • 25:$0.4580
  • 10:$0.4583
  • 1:$0.5500
FDD6N25TM
DISTI # FDD6N25TMCT-ND		ON SemiconductorMOSFET N-CH 250V 4.4A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		12904In Stock
  • 1000:$0.2934
  • 500:$0.3632
  • 100:$0.4854
  • 10:$0.6250
  • 1:$0.7100
FDD6N25TM
DISTI # FDD6N25TMDKR-ND		ON SemiconductorMOSFET N-CH 250V 4.4A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		12904In Stock
  • 1000:$0.2934
  • 500:$0.3632
  • 100:$0.4854
  • 10:$0.6250
  • 1:$0.7100
FDD6N25TM
DISTI # FDD6N25TMTR-ND		ON SemiconductorMOSFET N-CH 250V 4.4A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		10000In Stock
  • 25000:$0.2295
  • 12500:$0.2341
  • 5000:$0.2425
  • 2500:$0.2595
FDD6N25TM
DISTI # 31939067		ON SemiconductorTrans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R22500
  • 2500:$0.2173
FDD6N25TM
DISTI # 32456512		ON SemiconductorTrans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R17500
  • 5000:$0.1708
  • 2500:$0.1709
FDD6N25TM
DISTI # 32638001		ON SemiconductorTrans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R5000
  • 10000:$0.1692
  • 5000:$0.1717
  • 2500:$0.1727
FDD6N25TM
DISTI # 31440481		ON SemiconductorTrans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R1000
  • 1000:$0.2584
  • 500:$0.3235
  • 250:$0.3237
  • 100:$0.3238
  • 38:$0.4924
FDD6N25TM
DISTI # FDD6N25TM		ON SemiconductorTrans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R (Alt: FDD6N25TM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.2629
  • 5000:€0.2149
  • 10000:€0.1969
  • 15000:€0.1819
  • 25000:€0.1689
FDD6N25TM
DISTI # FDD6N25TM		ON SemiconductorTrans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R (Alt: FDD6N25TM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 2500:$0.2678
  • 5000:$0.2575
  • 7500:$0.2480
  • 12500:$0.2391
  • 25000:$0.2309
  • 62500:$0.2232
  • 125000:$0.2195
FDD6N25TM
DISTI # FDD6N25TM		ON SemiconductorTrans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD6N25TM)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.2362
  • 5000:$0.2347
  • 10000:$0.2317
  • 15000:$0.2287
  • 25000:$0.2231
FDD6N25TM
DISTI # FDD6N25TM		ON SemiconductorTrans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FDD6N25TM)
Min Qty: 1087
Container: Bulk		Americas - 0
  • 1137:$0.2999
  • 1139:$0.2979
  • 2276:$0.2939
  • 5685:$0.2909
  • 11370:$0.2829
FDD6N25TM
DISTI # 52M3160		ON SemiconductorMOSFET Transistor, N Channel, 4.4 A, 250 V, 0.9 ohm, 10 V, 5 V0
  • 25000:$0.2050
  • 15000:$0.2080
  • 10000:$0.2110
  • 5000:$0.2150
  • 2500:$0.2190
  • 1:$0.2200
FDD6N25TM
DISTI # 31Y1358		ON SemiconductorMOSFET, N-CH, 250V, 4.4A, TO-252AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:4.4A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.9ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes2285
  • 1000:$0.2670
  • 500:$0.2870
  • 250:$0.3090
  • 100:$0.3290
  • 50:$0.3870
  • 25:$0.4440
  • 10:$0.5020
  • 1:$0.6050
FDD6N25TM
DISTI # 512-FDD6N25TM		ON SemiconductorMOSFET 250V N-CH MOSFET
RoHS: Compliant		34848
  • 1:$0.5800
  • 10:$0.4780
  • 100:$0.3080
  • 1000:$0.2470
FDD6N25TMON SemiconductorPower Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHS: Compliant		746
  • 1000:$0.3000
  • 500:$0.3200
  • 100:$0.3300
  • 25:$0.3500
  • 1:$0.3700
FDD6N25TMFairchild Semiconductor Corporation4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA201
  • 57:$0.2400
  • 11:$0.3600
  • 1:$0.4800
FDD6N25TM
DISTI # 8090922		ON SemiconductorMOSFETFAIRCHILDFDD6N25TM, PK340
  • 250:£0.1500
  • 10:£0.1540
FDD6N25TM
DISTI # 8090922P		ON SemiconductorMOSFETFAIRCHILDFDD6N25TM, RL1620
  • 250:£0.1500
FDD6N25TMFairchild Semiconductor Corporation 836
    FDD6N25TM
    DISTI # FDD6N25TM    		ON SemiconductorTransistor: N-MOSFET,unipolar,250V,2.6A,0.05W,TO2522486
    • 1:$0.4507
    • 5:$0.3941
    • 25:$0.3180
    • 100:$0.2766
    • 500:$0.2531
    FDD6N25TM
    DISTI # 2453850    		ON SemiconductorMOSFET, N-CH, 250V, 4.4A, TO-252AA-3
    RoHS: Compliant    		2285
    • 2500:$0.3650
    • 1000:$0.3720
    • 100:$0.4640
    • 10:$0.7200
    • 1:$0.8740
    FDD6N25TM
    DISTI # 2453850RL    		ON SemiconductorMOSFET, N-CH, 250V, 4.4A, TO-252AA-3
    RoHS: Compliant    		0
    • 2500:$0.3650
    • 1000:$0.3720
    • 100:$0.4640
    • 10:$0.7200
    • 1:$0.8740
    FDD6N25TM
    DISTI # 2453850    		ON SemiconductorMOSFET, N-CH, 250V, 4.4A, TO-252AA-3
    RoHS: Compliant    		2380
    • 500:£0.2090
    • 250:£0.2240
    • 100:£0.2400
    • 25:£0.3930
    • 5:£0.4200
    FDD6N25TM
    DISTI # XSFP00000048082    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		5000 in Stock0 on Order
    • 5000:$0.3327
    • 2500:$0.3660
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    		 Schottky Diodes & Rectifiers 0.5 A 30 V SOD-323 S
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    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 6.3VDC 10uF 20% X7R AEC-Q200
    NTCG103JF103FT1

    Mfr.#: NTCG103JF103FT1

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    Mfr.#: LTST-C195TBJRKT

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    Disponibilità
    Azione:
    34
    Su ordine:
    2017
    Inserisci la quantità:
    Il prezzo attuale di FDD6N25TM è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,58 USD
    0,58 USD
    10
    0,48 USD
    4,78 USD
    100
    0,31 USD
    30,80 USD
    1000
    0,25 USD
    247,00 USD
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