SI5515CDC-T1-E3

Mfr. #:: SI5515CDC-T1-E3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET -20V Vds 8V Vgs 1206-8 ChipFET
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI5515CDC-T1-E3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:
Maggiori informazioni:: SI5515CDC-T1-E3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: ChipFET-8

Numero di canali:: 2 Channel

Polarità del transistor:: Canale N, Canale P

Vds - Tensione di rottura Drain-Source:: 20 V

Id - Corrente di scarico continua:: 4 A

Rds On - Resistenza Drain-Source:: 36 mOhms, 100 mOhms

Vgs th - Tensione di soglia gate-source:: 400 mV

Vgs - Tensione Gate-Source:: 8 V

Qg - Carica cancello:: 11.3 nC, 11 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 3.1 W

Configurazione:: Dual

Modalità canale:: Aumento

Nome depositato:: TrenchFET

Confezione:: Bobina

Serie:: SI54

Tipo di transistor:: 1 N-Channel, 1 P-Channel

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 22.4 S, 9.5 S

Tempo di caduta:: 10 ns, 6 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 9 ns, 32 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 30 ns, 25 ns

Tempo di ritardo di accensione tipico:: 7 ns, 10 ns

Parte # Alias:: SI5515CDC-E3

Unità di peso:: 0.002998 oz

Tags: SI5515CDC-T, SI5515CDC, SI5515C, SI5515, SI551, SI55, SI5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI5515CDC-T1-E3 Valutazioni e recensioni

M***p

Product never arrived

2019-06-22

A***n

Excellent product, fully consistent with the description, good build quality.

2019-04-14

A***v

norm

2019-04-26

N***n

Like everything is in place

2019-01-31

SI5515CDC-T1-E3 Descrizione

***ure Electronics: Dual N/P-Channel 20 V 2.1/1.3 W 11.3/11 nC Silicon SMT Mosfet - 1206-8 ChipFET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:8V; Package/Case:8-1206; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes

***ment14 APAC: DUAL N/P CHANNEL MOSFET, 20V, 1206; Tran; DUAL N/P CHANNEL MOSFET, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:4A; Continuous Drain Current Id, P Channel:-3.1A; Drain Source Voltage Vds, N Channel:20V

***nell: MOSFET, NP CH, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:1206; No. of Pins:8

SI5515CDC-T1-E3 Maggiori informazioni

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI5515CDC-T1-E3 DISTI # V72:2272_09216222	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R RoHS: Compliant	2960	1000:$0.3504 500:$0.3976 250:$0.4851 100:$0.5049 25:$0.5964 10:$0.7288 1:$0.9011
SI5515CDC-T1-E3 DISTI # V36:1790_09216222	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R RoHS: Compliant	0	3000:$0.2863
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 4A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.2793 15000:$0.2867 6000:$0.2977 3000:$0.3197
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.3634 500:$0.4542 100:$0.5746 10:$0.7490 1:$0.8500
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.3634 500:$0.4542 100:$0.5746 10:$0.7490 1:$0.8500
SI5515CDC-T1-E3 DISTI # 32378710	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R RoHS: Compliant	2960	24:$0.9011
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5515CDC-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R (Alt: SI5515CDC-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2599 18000:€0.2789 12000:€0.3019 6000:€0.3509 3000:€0.5149
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R (Alt: SI5515CDC-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI5515CDC-T1-E3 DISTI # 16P3787	Vishay Intertechnologies	DUAL N/P CHANNEL MOSFET, 20V, 1206,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:800mV RoHS Compliant: Yes	0	2500:$0.3440 1000:$0.4340 500:$0.4940 250:$0.5760 100:$0.6480 50:$0.7320 25:$0.8040 1:$0.8960
SI5515CDC-T1-E3 DISTI # 781-SI5515CDC-E3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs 1206-8 ChipFET RoHS: Compliant	21484	1:$0.8300 10:$0.6690 100:$0.5080 500:$0.4200 1000:$0.3360 3000:$0.3040 6000:$0.2830 9000:$0.2730 24000:$0.2620
SI5515CDC-T1-E3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs 1206-8 ChipFET RoHS: Compliant	Americas -

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Disponibilità

Azione:: 21
Su ordine:: 2004
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Il prezzo attuale di SI5515CDC-T1-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,83 USD~~; ~~0,83 USD~~

10: ~~0,67 USD~~; ~~6,69 USD~~

100: ~~0,51 USD~~; ~~50,80 USD~~

500: ~~0,42 USD~~; ~~210,00 USD~~

1000: ~~0,34 USD~~; ~~336,00 USD~~

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