IRFH5306TRPBF

IRFH5306TRPBF
Mfr. #:
IRFH5306TRPBF
Produttore:
Infineon / IR
Descrizione:
MOSFET 30V 1 N-CH HEXFET 8.1mOhms 7.8nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFH5306TRPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH5306TRPBF DatasheetIRFH5306TRPBF Datasheet (P4-P6)IRFH5306TRPBF Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PQFN-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
44 A
Rds On - Resistenza Drain-Source:
8.1 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
7.8 nC
Pd - Dissipazione di potenza:
26 W
Configurazione:
Separare
Confezione:
Bobina
Altezza:
0.83 mm
Lunghezza:
6 mm
Tipo di transistor:
1 N-Channel
Larghezza:
5 mm
Marca:
Infineon / IR
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
4000
sottocategoria:
MOSFET
Parte # Alias:
SP001556452
Tags
IRFH5306, IRFH53, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***ied Electronics & Automation
MOSFET; N-Channel; 30V; 44A; 8.1 mOhm max; 7.8 nC Qg; PQFN 5x6
***et
Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R
***ark
N CHANNEL MOSFET, 30V, 44A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current, Id:15A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0081ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
Parte # Mfg. Descrizione Azione Prezzo
IRFH5306TRPBF
DISTI # IRFH5306TRPBF-ND
Infineon Technologies AGMOSFET N-CH 30V 15A 5X6 PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRFH5306TRPBF
    DISTI # 70019241
    Infineon Technologies AGMOSFET,N-Channel,30V,44A,8.1 mOhm max,7.8 nC Qg,PQFN 5x6
    RoHS: Compliant
    0
    • 4000:$1.1800
    • 8000:$1.1560
    • 20000:$1.1210
    • 40000:$1.0740
    • 100000:$1.0030
    IRFH5306TRPBFInternational RectifierPower Field-Effect Transistor, 15A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET
    RoHS: Compliant
    2000
    • 1000:$0.3800
    • 500:$0.4000
    • 100:$0.4200
    • 25:$0.4400
    • 1:$0.4700
    IRFH5306TRPBF
    DISTI # 942-IRFH5306TRPBF
    Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 8.1mOhms 7.8nC
    RoHS: Compliant
    0
      Immagine Parte # Descrizione
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      Disponibilità
      Azione:
      Available
      Su ordine:
      4000
      Inserisci la quantità:
      Il prezzo attuale di IRFH5306TRPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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