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BSC046N02KS G

BSC046N02KS G
Mfr. #:
BSC046N02KS G
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC046N02KS G Scheda dati
Consegna:
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ECAD Model:
Maggiori informazioni:
BSC046N02KS G maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
FET - Single
Serie
OptiMOS
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
BSC046N02KSGAUMA1 BSC046N02KSGXT SP000379666
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
8-PowerTDFN
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
PG-TDSON-8
Configurazione
Singola Quad Scarico Tripla Sorgente
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
48W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
20V
Ingresso-Capacità-Ciss-Vds
4100pF @ 10V
Funzione FET
Logic Level Gate, 2.5V Drive
Corrente-Continuo-Scarico-Id-25°C
19A (Ta), 80A (Tc)
Rds-On-Max-Id-Vgs
4.6 mOhm @ 50A, 4.5V
Vgs-th-Max-Id
1.2V @ 110μA
Gate-Carica-Qg-Vgs
27.6nC @ 4.5V
Pd-Power-Dissipazione
2.8 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
6 ns
Ora di alzarsi
117 ns
Vgs-Gate-Source-Voltage
12 V
Id-Continuo-Scarico-Corrente
19 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Resistenza
4.6 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
34 ns
Tempo di ritardo all'accensione tipico
15 ns
Modalità canale
Aumento
Tags
BSC046N02KSG, BSC046N0, BSC046, BSC04, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descrizione Azione Prezzo
BSC046N02KSGAUMA1
DISTI # V72:2272_06384263		Infineon Technologies AGTrans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R
RoHS: Compliant		343
  • 250:$0.8211
  • 100:$0.8730
  • 25:$0.9934
  • 10:$1.0199
  • 1:$1.1493
BSC046N02KSGAUMA1
DISTI # BSC046N02KSGAUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 20V 80A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3714In Stock
  • 1000:$0.6732
  • 500:$0.8527
  • 100:$1.0995
  • 10:$1.3910
  • 1:$1.5700
BSC046N02KSGAUMA1
DISTI # BSC046N02KSGAUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 20V 80A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3714In Stock
  • 1000:$0.6732
  • 500:$0.8527
  • 100:$1.0995
  • 10:$1.3910
  • 1:$1.5700
BSC046N02KSGAUMA1
DISTI # BSC046N02KSGAUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 20V 80A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.5795
BSC046N02KSGAUMA1
DISTI # 31278753		Infineon Technologies AGTrans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.6740
BSC046N02KSGAUMA1
DISTI # 29571910		Infineon Technologies AGTrans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R
RoHS: Compliant		343
  • 250:$0.8216
  • 100:$0.8712
  • 25:$0.9911
  • 12:$1.0180
BSC046N02KSGAUMA1
DISTI # BSC046N02KSGAUMA1		Infineon Technologies AGTrans MOSFET N-CH 20V 19A 8-Pin TDSON EP - Tape and Reel (Alt: BSC046N02KSGAUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.5699
  • 10000:$0.5499
  • 20000:$0.5299
  • 30000:$0.5119
  • 50000:$0.5029
BSC046N02KS G
DISTI # 726-BSC046N02KSG		Infineon Technologies AGMOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2
RoHS: Compliant		19503
  • 1:$1.3000
  • 10:$1.1100
  • 100:$0.8520
  • 500:$0.7530
  • 1000:$0.5950
BSC046N02KSGInfineon Technologies AG19 A, 20 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET4256
  • 3789:$0.3780
  • 1779:$0.3960
  • 1:$1.4400
BSC046N02KSGAUMA1
DISTI # 7528167P		Infineon Technologies AGMOSFET N-CHANNEL 20V 19A OPTIMOS2 TDSON8, RL1540
  • 20:£0.7550
  • 40:£0.6900
  • 100:£0.6500
  • 200:£0.6400
BSC046N02KSGAUMA1
DISTI # BSC046N02KSGAUMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,20V,60A,48W,PG-TDSON-842
  • 1:$1.0273
  • 25:$0.8838
  • 100:$0.7093
  • 250:$0.6164
  • 1000:$0.5739
BSC046N02KSGInfineon Technologies AG 16998
    BSC046N02KSGAUMA1
    DISTI # C1S322000217900    		Infineon Technologies AGTrans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R
    RoHS: Compliant    		343
    • 250:$0.9407
    • 100:$0.9511
    • 25:$1.1449
    • 10:$1.1580
    BSC046N02KSGAUMA1
    DISTI # C1S322000529090    		Infineon Technologies AGTrans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R
    RoHS: Compliant    		5000
    • 5000:$0.5930
    BSC046N02KSGAUMA1
    DISTI # 2480738    		Infineon Technologies AGMOSFET, N-CH, 20V, 80A, TDSON-8
    RoHS: Compliant    		0
    • 1:$2.0600
    • 10:$1.7600
    • 100:$1.3500
    • 500:$1.1900
    • 1000:$0.9420
    • 5000:$0.8340
    • 10000:$0.8050
    BSC046N02KSGAUMA1
    DISTI # 2480738RL    		Infineon Technologies AGMOSFET, N-CH, 20V, 80A, TDSON-8
    RoHS: Compliant    		0
    • 1:$2.0600
    • 10:$1.7600
    • 100:$1.3500
    • 500:$1.1900
    • 1000:$0.9420
    • 5000:$0.8340
    • 10000:$0.8050
    Immagine Parte # Descrizione
    BSC046N02KS G

    Mfr.#: BSC046N02KS G

    OMO.#: OMO-BSC046N02KS-G

    		 MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2
    BSC046N10NS3 G

    Mfr.#: BSC046N10NS3 G

    OMO.#: OMO-BSC046N10NS3-G

    		 MOSFET N-Ch 100V 100A TDSON-8
    BSC046N10NS3GATMA1

    Mfr.#: BSC046N10NS3GATMA1

    OMO.#: OMO-BSC046N10NS3GATMA1

    		 MOSFET N-Ch 100V 100A TDSON-8
    BSC046N02KSGAUMA1

    Mfr.#: BSC046N02KSGAUMA1

    OMO.#: OMO-BSC046N02KSGAUMA1

    		 MOSFET LV POWER MOS
    BSC046N02KS G

    Mfr.#: BSC046N02KS G

    OMO.#: OMO-BSC046N02KS-G-1190

    		 MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2
    BSC046N10NS

    Mfr.#: BSC046N10NS

    OMO.#: OMO-BSC046N10NS-1190

    		 Nuovo e originale
    BSC046N10NS3 G

    Mfr.#: BSC046N10NS3 G

    OMO.#: OMO-BSC046N10NS3-G-1190

    		 Trans MOSFET N-CH 100V 17A 8-Pin TDSON T/R (Alt: BSC046N10NS3 G)
    BSC046N10NS3G

    Mfr.#: BSC046N10NS3G

    OMO.#: OMO-BSC046N10NS3G-1190

    		 POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    BSC046N02KSGAUMA1

    Mfr.#: BSC046N02KSGAUMA1

    OMO.#: OMO-BSC046N02KSGAUMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 20V 80A TDSON-8
    BSC046N10NS3GATMA1

    Mfr.#: BSC046N10NS3GATMA1

    OMO.#: OMO-BSC046N10NS3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-Ch 100V 100A TDSON-8
    Disponibilità
    Azione:
    Available
    Su ordine:
    1500
    Inserisci la quantità:
    Il prezzo attuale di BSC046N02KS G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,89 USD
    0,89 USD
    10
    0,85 USD
    8,48 USD
    100
    0,80 USD
    80,33 USD
    500
    0,76 USD
    379,30 USD
    1000
    0,71 USD
    714,00 USD
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