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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSC046N10NS3 G DISTI # BSC046N10NS3 G | Infineon Technologies AG | Trans MOSFET N-CH 100V 17A 8-Pin TDSON T/R (Alt: BSC046N10NS3 G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC046N10NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC046N10NS3GATMA1 DISTI # 50Y1804 | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, 150DEG C, 156W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes | 0 |
|
| BSC046N10NS3 G DISTI # 726-BSC046N10NS3G | Infineon Technologies AG | MOSFET N-Ch 100V 100A TDSON-8 RoHS: Compliant | 100 |
|
| BSC046N10NS3GATMA1 DISTI # 726-BSC046N10NS3GATM | Infineon Technologies AG | MOSFET N-Ch 100V 100A TDSON-8 RoHS: Compliant | 0 |
|
| BSC046N10NS3G | Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2 |
|
| BSC046N10NS3 G | Infineon Technologies AG | RoHS(ship within 1day) | 3 |
|
| BSC046N10NS3GATMA1 DISTI # 2480739 | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC046N10NS3GATMA1 DISTI # 2480739RL | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC046N10NS3GATMA1 DISTI # 2480739 | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BSC040N10NS5ATMA1 OMO.#: OMO-BSC040N10NS5ATMA1 |
MOSFET N-Ch 100V 100A TDSON-8 |
|
Mfr.#: BSC042N03LSGATMA1 , TDA7 |
Nuovo e originale |
|
|
Mfr.#: BSC042N03MSG OMO.#: OMO-BSC042N03MSG-1190 |
Nuovo e originale |
|
Mfr.#: BSC042N03S G |
MOSFET N-CH 30V 95A TDSON-8 |
|
|
Mfr.#: BSC042NE7NS3G OMO.#: OMO-BSC042NE7NS3G-1190 |
Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP |
|
|
Mfr.#: BSC046N10NS OMO.#: OMO-BSC046N10NS-1190 |
Nuovo e originale |
|
|
Mfr.#: BSC046N10NS3G OMO.#: OMO-BSC046N10NS3G-1190 |
POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
|
|
Mfr.#: BSC047N08NS3GATMA1 |
MOSFET N-CH 80V 100A TDSON-8 |
|
|
Mfr.#: BSC048N025SGATMA1 OMO.#: OMO-BSC048N025SGATMA1-1190 |
Nuovo e originale |
|
|
Mfr.#: BSC040N10NS5ATMA1 |
MOSFET N-Ch 100V 100A TDSON-8 |