HGT1S7N60B3DS

HGT1S7N60B3DS
Mfr. #:
HGT1S7N60B3DS
Produttore:
Rochester Electronics, LLC
Descrizione:
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HGT1S7N60B3DS Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
HGT1S7N60B3D, HGT1S7N60B, HGT1S7, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
HGT1S7N60B3DS9A
DISTI # 512-HGT1S7N60B3DS9A
ON SemiconductorIGBT Transistors 14A 600V UFS N-Ch
RoHS: Not compliant
0
    HGT1S7N60B3DSHarris SemiconductorInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    RoHS: Not Compliant
    1150
    • 1000:$1.0800
    • 500:$1.1400
    • 100:$1.1800
    • 25:$1.2300
    • 1:$1.3300
    Immagine Parte # Descrizione
    HGT1S7N60C3DS

    Mfr.#: HGT1S7N60C3DS

    OMO.#: OMO-HGT1S7N60C3DS

    IGBT Transistors 7A 600V TF=275NS
    HGT1S7N60A4

    Mfr.#: HGT1S7N60A4

    OMO.#: OMO-HGT1S7N60A4-1190

    Nuovo e originale
    HGT1S7N60A40S

    Mfr.#: HGT1S7N60A40S

    OMO.#: OMO-HGT1S7N60A40S-1190

    Nuovo e originale
    HGT1S7N60A4DS

    Mfr.#: HGT1S7N60A4DS

    OMO.#: OMO-HGT1S7N60A4DS-ON-SEMICONDUCTOR

    IGBT 600V 34A 125W TO263AB
    HGT1S7N60A4S9A

    Mfr.#: HGT1S7N60A4S9A

    OMO.#: OMO-HGT1S7N60A4S9A-1190

    IGBT Transistors 600V N-Channel IGBT SMPS Series
    HGT1S7N60B3

    Mfr.#: HGT1S7N60B3

    OMO.#: OMO-HGT1S7N60B3-1190

    Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
    HGT1S7N60B3D

    Mfr.#: HGT1S7N60B3D

    OMO.#: OMO-HGT1S7N60B3D-1190

    Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
    HGT1S7N60B3DS

    Mfr.#: HGT1S7N60B3DS

    OMO.#: OMO-HGT1S7N60B3DS-1190

    Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    HGT1S7N60B3S

    Mfr.#: HGT1S7N60B3S

    OMO.#: OMO-HGT1S7N60B3S-1190

    Nuovo e originale
    HGT1S7N60C3DS9A

    Mfr.#: HGT1S7N60C3DS9A

    OMO.#: OMO-HGT1S7N60C3DS9A-ON-SEMICONDUCTOR

    IGBT 600V 14A 60W TO263AB
    Disponibilità
    Azione:
    Available
    Su ordine:
    2500
    Inserisci la quantità:
    Il prezzo attuale di HGT1S7N60B3DS è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,62 USD
    1,62 USD
    10
    1,54 USD
    15,39 USD
    100
    1,46 USD
    145,80 USD
    500
    1,38 USD
    688,50 USD
    1000
    1,30 USD
    1 296,00 USD
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