MRFE6VP6300HR5

Mfr. #:: MRFE6VP6300HR5
Produttore:: NXP / Freescale
Descrizione:: RF MOSFET Transistors VHV6 300W50VISM NI780H-4
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: MRFE6VP6300HR5 Scheda dati
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Maggiori informazioni:: MRFE6VP6300HR5 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: NXP

Categoria di prodotto:: Transistor MOSFET RF

RoHS:: Y

Polarità del transistor:: Canale N

Tecnologia:: si

Id - Corrente di scarico continua:: 100 mA

Vds - Tensione di rottura Drain-Source:: 130 V

Guadagno:: 26.6 dB

Potenza di uscita:: 300 W

Temperatura di esercizio minima:: - 65 C

Temperatura massima di esercizio:: + 150 C

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: NI-780-4

Confezione:: Bobina

Configurazione:: Separare

Frequenza operativa:: 1.8 MHz to 600 MHz

Serie:: MRFE6VP6300

Tipo:: MOSFET di potenza RF

Marca:: NXP / Freescale

Pd - Dissipazione di potenza:: 1.05 kW

Tipologia di prodotto:: Transistor MOSFET RF

Quantità confezione di fabbrica:: 50

sottocategoria:: MOSFET

Vgs - Tensione Gate-Source:: 10 V

Vgs th - Tensione di soglia gate-source:: 2.2 V

Parte # Alias:: 935317343178

Unità di peso:: 0.225605 oz

Tags: MRFE6VP6300HR, MRFE6VP6300H, MRFE6VP63, MRFE6VP6, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
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Step2:
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Step3:
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MRFE6VP6300HR5 Valutazioni e recensioni

I***s

The goods came, the quality is good. Thank you!

2019-03-12

R***v

Thank you, long!

2019-04-25

MRFE6VP6300HR5 Descrizione

***W: RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHS

***ark: RF POWER FET, N CH, 125V, NI-780-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; No. of Pins:4;RoHS Compliant: Yes

***W: RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V, CFM4F, RoHS

*** Source Electronics: FET RF 2CH 130V 230MHZ NI1230 / Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R

***ure Electronics: MRFE6VPx Series 130 V 230 MHz RF Power Field Effect Transistor - NI-1230

***nell: TRANSISTOR, RF, 130V, NI-1230-4; Drain Source Voltage Vds: 130VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.667kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230; N

***W: RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V, CFM4F, RoHS

***nell: RF FET, 1.8MHZ-600MHZ, NI-1230; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: -; Power Dissipation Pd: 1.667kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230; No.

***escale Semiconductor: Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V

***W: RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1829

***ical: Trans RF MOSFET N-CH 130V 5-Pin Case 375E-04 T/R

*** Electronics: RF MOSFET Transistors VHV6 600W 50V NI1230HS

***el Electronic: IC REG LINEAR 2.5V 150MA 5TSOP

***i-Key: FET RF 2CH 130V 230MHZ NI1230S

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***ical: Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N-CH, 100V, 4.3A, TO-252AA

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No

MRFE6VP6300HR5 Maggiori informazioni

MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs: NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
MRFE6VP6300HR5 DISTI # V72:2272_07204238	NXP Semiconductors	Trans RF MOSFET N-CH 130V 5-Pin NI-780 T/R RoHS: Compliant	51	25:$94.4400 10:$97.5000 1:$103.5600
MRFE6VP6300HR5 DISTI # MRFE6VP6300HR5CT-ND	NXP Semiconductors	FET RF 2CH 130V 230MHZ NI780-4 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	964In Stock	10:$100.2110 1:$105.6600
MRFE6VP6300HR5 DISTI # MRFE6VP6300HR5DKR-ND	NXP Semiconductors	FET RF 2CH 130V 230MHZ NI780-4 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	964In Stock	10:$100.2110 1:$105.6600
MRFE6VP6300HR5 DISTI # MRFE6VP6300HR5TR-ND	NXP Semiconductors	FET RF 2CH 130V 230MHZ NI780-4 RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	950In Stock	100:$88.0261 50:$94.6446
MRFE6VP6300HR5 DISTI # 29074178	NXP Semiconductors	Trans RF MOSFET N-CH 130V 5-Pin NI-780 T/R RoHS: Compliant	605	1:$113.9500
MRFE6VP6300HR5 DISTI # 29074171	NXP Semiconductors	Trans RF MOSFET N-CH 130V 5-Pin NI-780 T/R RoHS: Compliant	380	1:$113.9500
MRFE6VP6300HR5 DISTI # 30704518	NXP Semiconductors	Trans RF MOSFET N-CH 130V 5-Pin NI-780 T/R RoHS: Compliant	100	100:$84.7374 50:$90.8588
MRFE6VP6300HR5 DISTI # 25767385	NXP Semiconductors	Trans RF MOSFET N-CH 130V 5-Pin NI-780 T/R RoHS: Compliant	51	25:$94.4400 10:$97.5000 1:$103.5600
MRFE6VP6300HR5 DISTI # 30602387	NXP Semiconductors	Trans RF MOSFET N-CH 130V 5-Pin NI-780 T/R RoHS: Compliant	35	25:$93.3300 10:$96.7725 5:$98.5575 1:$106.7175
MRFE6VP6300HR5 DISTI # MRFE6VP6300HR5	Avnet, Inc.	Trans MOSFET N-CH 130V 4-Pin NI-780 T/R - Tape and Reel (Alt: MRFE6VP6300HR5) RoHS: Compliant Min Qty: 50 Container: Reel	Americas - 0	50:$96.3900 100:$92.5900 200:$88.9900 300:$85.7900 500:$84.1900
MRFE6VP6300HR5 DISTI # MRFE6VP6300HR5	Avnet, Inc.	Trans MOSFET N-CH 130V 4-Pin NI-780 T/R (Alt: MRFE6VP6300HR5) RoHS: Compliant Min Qty: 50 Container: Tape and Reel	Asia - 0	50:$94.5500 100:$91.9236 150:$89.4392 250:$87.0855 500:$85.9545 1250:$84.8526 2500:$82.7313
MRFE6VP6300HR5 DISTI # 29X4273	NXP Semiconductors	RF POWER FET, N CHANNEL, 125V, NI-780-4, FULL REEL,Drain Source Voltage Vds:125V,Continuous Drain Current Id:100mA,Power Dissipation Pd:300W,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,No. of Pins:4Pins,MSL:-RoHS Compliant: Yes	0	1:$118.0100 10:$113.3400 25:$106.6800 50:$106.6800 100:$106.6800
MRFE6VP6300HR5 DISTI # 31AC6675	NXP Semiconductors	TRANSISTOR, RF, 130V, NI-780-4,Drain Source Voltage Vds:130VDC,Continuous Drain Current Id:-,Power Dissipation Pd:1.05kW,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,RF Transistor Case:NI-780,No. of RoHS Compliant: Yes	126	1:$105.6800 10:$100.2100 25:$95.9700
MRFE6VP6300HR5 DISTI # 841-MRFE6VP6300HR5	NXP Semiconductors	RF MOSFET Transistors VHV6 300W50VISM NI780H-4 RoHS: Compliant	165	1:$105.6800 5:$103.6300 10:$100.2100 25:$95.9700 50:$94.6500
MRFE6VP6300HR3 DISTI # 841-MRFE6VP6300HR3	NXP Semiconductors	RF MOSFET Transistors VHV6 300W50VISM NI780H-4 RoHS: Compliant	98	1:$105.6800 5:$103.6300 10:$100.2100 25:$95.9700 50:$94.6500 100:$88.0300 250:$86.0500
MRFE6VP6300HR5 DISTI # MRFE6VP6300HR5	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	2365	1:$110.6700 10:$102.2900 25:$99.2800
MRFE6VP6300HR5 DISTI # 2776250	NXP Semiconductors	TRANSISTOR, RF, 130V, NI-780-4 RoHS: Compliant	126	1:$158.1400 5:$152.8700 10:$145.5900 50:$141.1100
MRFE6VP6300HR5 DISTI # 2776250	NXP Semiconductors	TRANSISTOR, RF, 130V, NI-780-4 RoHS: Compliant	131	1:£81.4400 5:£79.8600 10:£73.9500 50:£67.8400
MRFE6VP6300HR5 DISTI # C1S537101501991	NXP Semiconductors	MOSFETs RoHS: Compliant	35	25:$73.2000 10:$75.9000 5:$77.3000 1:$83.7000
MRFE6VP6300HR5 DISTI # C1S233100197309	NXP Semiconductors	Trans RF MOSFET N-CH 130V 5-Pin NI-780 T/R RoHS: Compliant	51	25:$94.4800 10:$97.5500 1:$103.6200
MRFE6VP6300HR5 DISTI # C1S233100241284	NXP Semiconductors	Trans RF MOSFET N-CH 130V 5-Pin NI-780 T/R RoHS: Compliant	380	25:$110.0000 10:$111.0000 5:$112.0000 1:$129.0000

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Quantità
Prezzo unitario
est. Prezzo

1: ~~105,68 USD~~; ~~105,68 USD~~

5: ~~103,63 USD~~; ~~518,15 USD~~

10: ~~100,21 USD~~; ~~1 002,10 USD~~

25: ~~95,97 USD~~; ~~2 399,25 USD~~

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MRFE6VP6300HR5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

I***s

R***v

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes