HP8MA2TB1

HP8MA2TB1
Mfr. #:
HP8MA2TB1
Produttore:
Rohm Semiconductor
Descrizione:
MOSFET, N& P-CH, 30V, HSOP, Transistor Polarity:N and P Channel, Continuous Drain Current Id:18A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0075ohm, Rds(on) Test Voltage Vgs:10V,
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HP8MA2TB1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
HP8MA2TB1 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
HP8M, HP8
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array N-CH/P-CH 30V ±18A/±15A 8-Pin HSOP Emboss T/R
***i-Key
HP8MA2 IS LOW ON-RESISTANCE AND
***ark
Mosfet, N& P-Ch, 30V, Hsop; Transistor Polarity:n And P Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0075Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Parte # Mfg. Descrizione Azione Prezzo
HP8MA2TB1
DISTI # 10AC7464
ROHM SemiconductorMOSFET, N& P-CH, 30V, HSOP,Transistor Polarity:N and P Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes2383
  • 1:$1.1100
  • 10:$0.9040
  • 25:$0.7990
  • 50:$0.7120
  • 100:$0.6100
  • 250:$0.5360
  • 500:$0.4230
  • 1000:$0.4070
HP8MA2TB1ROHM Semiconductor 2401
    HP8MA2TB1
    DISTI # 2706747
    ROHM SemiconductorMOSFET, N& P-CH, 30V, HSOP
    RoHS: Compliant
    2378
    • 1:$1.2900
    • 10:$1.1200
    • 100:$0.9140
    • 250:$0.7720
    • 500:$0.6680
    • 1000:$0.6320
    HP8MA2TB1ROHM SemiconductorRoHS(ship within 1day)1887
    • 1:$1.6600
    • 10:$1.2500
    • 50:$1.0400
    • 100:$0.8300
    • 500:$0.7100
    • 1000:$0.6700
    HP8MA2TB1
    DISTI # 2706747
    ROHM SemiconductorMOSFET, N& P-CH, 30V, HSOP
    RoHS: Compliant
    2388
    • 5:£0.8110
    • 25:£0.7440
    • 100:£0.5200
    Immagine Parte # Descrizione
    HP8MA2TB1

    Mfr.#: HP8MA2TB1

    OMO.#: OMO-HP8MA2TB1

    MOSFET 30V NCH+PCH MIDDLE POWER
    HP8M51TB1

    Mfr.#: HP8M51TB1

    OMO.#: OMO-HP8M51TB1

    MOSFET 100V NCH+PCH POWER
    HP8M31TB1

    Mfr.#: HP8M31TB1

    OMO.#: OMO-HP8M31TB1

    MOSFET 60V NCH+PCH POWER
    HP8M31 , 2SB1545

    Mfr.#: HP8M31 , 2SB1545

    OMO.#: OMO-HP8M31-2SB1545-1190

    Nuovo e originale
    HP8M51TB1

    Mfr.#: HP8M51TB1

    OMO.#: OMO-HP8M51TB1-1190

    HP8M51TB1 IS LOW ON-RESISTANCE A
    HP8MA2-TB1

    Mfr.#: HP8MA2-TB1

    OMO.#: OMO-HP8MA2-TB1-1190

    Nuovo e originale
    HP8MA2TB1

    Mfr.#: HP8MA2TB1

    OMO.#: OMO-HP8MA2TB1-1190

    MOSFET, N& P-CH, 30V, HSOP, Transistor Polarity:N and P Channel, Continuous Drain Current Id:18A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0075ohm, Rds(on) Test Voltage Vgs:10V,
    Disponibilità
    Azione:
    Available
    Su ordine:
    2500
    Inserisci la quantità:
    Il prezzo attuale di HP8MA2TB1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,61 USD
    0,61 USD
    10
    0,58 USD
    5,80 USD
    100
    0,55 USD
    54,95 USD
    500
    0,52 USD
    259,45 USD
    1000
    0,49 USD
    488,40 USD
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