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PXFC193808SVV1R250XTMA1

PXFC193808SVV1R250XTMA1
Mfr. #:
PXFC193808SVV1R250XTMA1
Produttore:
Infineon Technologies
Descrizione:
RF MOSFET Transistors RFP-LD10M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PXFC193808SVV1R250XTMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PXFC193808SVV1R250XTMA1 DatasheetPXFC193808SVV1R250XTMA1 Datasheet (P4-P6)PXFC193808SVV1R250XTMA1 Datasheet (P7-P9)PXFC193808SVV1R250XTMA1 Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Alias ​​parziali
PXFC193808SV R250 SP001282074 V1
Pacchetto-Custodia
H-37275-6
Tecnologia
si
Tags
PXFC193808SVV, PXFC193, PXFC19, PXFC1, PXFC, PXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 65V 7-Pin H-37275G-6/2 T/R
***el Electronic
Buffers & Line Drivers 3.3V OCTAL BUFFER 3-S 30 OHM
*** Electronic Components
RF MOSFET Transistors RFP-LD10M
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***ure Electronics
P-Channel 20 V 38 mO 9.1 nC SMT Enhancement Mode Mosfet - SOT-23
***ical
Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R
***nell
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3
***ark
N CHANNEL MOSFET, 200V, 17A SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: No
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA
***emi
N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ
***ment14 APAC
MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance
***roFlash
Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
***emi
Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ
***ure Electronics
Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***Yang
Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r
***el Electronic
ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
***ment14 APAC
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).
*** Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
Parte # Mfg. Descrizione Azione Prezzo
PXFC193808SVV1R250XTMA1
DISTI # PXFC193808SVV1R250XTMA1-ND		Infineon Technologies AGIC AMP RF LDMOS
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$148.5849
PXFC193808SVV1R250XTMA1
DISTI # 726-PXFC193808SVV1R2		Infineon Technologies AGRF MOSFET Transistors RFP-LD10M0
    Immagine Parte # Descrizione
    PXFC193808SVV1R250XTMA1

    Mfr.#: PXFC193808SVV1R250XTMA1

    OMO.#: OMO-PXFC193808SVV1R250XTMA1-INFINEON-TECHNOLOGIES

    		 RF MOSFET Transistors RFP-LD10M
    PXFC193808SV

    Mfr.#: PXFC193808SV

    OMO.#: OMO-PXFC193808SV-1190

    		 Nuovo e originale
    PXFC193808SV V1 R250

    Mfr.#: PXFC193808SV V1 R250

    OMO.#: OMO-PXFC193808SV-V1-R250-1190

    		 Nuovo e originale
    PXFC193808SVV1

    Mfr.#: PXFC193808SVV1

    OMO.#: OMO-PXFC193808SVV1-1190

    		 Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    2500
    Inserisci la quantità:
    Il prezzo attuale di PXFC193808SVV1R250XTMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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    94 722,90 USD
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    178 301,90 USD
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