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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SPB02N60S5ATMA1 DISTI # SPB02N60S5ATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 600V 1.8A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 178In Stock |
|
| SPB02N60S5ATMA1 DISTI # SPB02N60S5ATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 600V 1.8A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 178In Stock |
|
| SPB02N60S5ATMA1 DISTI # SPB02N60S5ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 600V 1.8A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPB02N60S5 | Infineon Technologies AG | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 700 |
|
| SPB02N60S5 DISTI # 726-SPB02N60S5 | Infineon Technologies AG | MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS S5 RoHS: Compliant | 0 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SPB02N60C3 OMO.#: OMO-SPB02N60C3-126 |
IGBT Transistors MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3 |
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|
Mfr.#: SPB021N04N OMO.#: OMO-SPB021N04N-1190 |
Nuovo e originale |
|
Mfr.#: SPB02N60C3ATMA1 |
MOSFET N-CH 650V 1.8A D2PAK |
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Mfr.#: SPB02N60S5 OMO.#: OMO-SPB02N60S5-1190 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: SPB02N60S5ATMA1 |
MOSFET N-CH 600V 1.8A TO-263 |
|
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Mfr.#: SPB02N60S5E3045A OMO.#: OMO-SPB02N60S5E3045A-1190 |
Nuovo e originale |
|
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Mfr.#: SPB02N6OC3 OMO.#: OMO-SPB02N6OC3-1190 |
Nuovo e originale |
