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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SPB02N60C3ATMA1 DISTI # SPB02N60C3ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 650V 1.8A D2PAK RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPB02N60C3 DISTI # 30577100 | Infineon Technologies AG | Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-263 RoHS: Compliant | 40 |
|
| SPB02N60C3 DISTI # SP000013516 | Infineon Technologies AG | Trans MOSFET N-CH 600V 1.8A 3-Pin TO-263 T/R (Alt: SP000013516) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 15 |
|
| SPB02N60C3 DISTI # 726-SPB02N60C3 | Infineon Technologies AG | MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3 RoHS: Compliant | 0 | |
| SPB02N60C3 | Infineon Technologies AG | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 11500 |
|
| SPB02N60C3ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 36000 |
|
| SPB02N60C3 DISTI # 1471779 | Infineon Technologies AG | RoHS: Compliant | 0 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SPB02N60C3 OMO.#: OMO-SPB02N60C3-126 |
IGBT Transistors MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3 |
|
Mfr.#: SPB02N60C3ATMA1 |
MOSFET N-CH 650V 1.8A D2PAK |
|
|
Mfr.#: SPB02N60S5 OMO.#: OMO-SPB02N60S5-1190 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: SPB02N60S5ATMA1 |
MOSFET N-CH 600V 1.8A TO-263 |
|
|
Mfr.#: SPB02N60S5E3045A OMO.#: OMO-SPB02N60S5E3045A-1190 |
Nuovo e originale |
|
|
Mfr.#: SPB02N6OC3 OMO.#: OMO-SPB02N6OC3-1190 |
Nuovo e originale |
