SIE810DF-T1-GE3

SIE810DF-T1-GE3
Mfr. #:
SIE810DF-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 20V 236A 125W 1.4mohm @ 10V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIE810DF-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIE810DF-T1-GE3 DatasheetSIE810DF-T1-GE3 Datasheet (P4-P6)SIE810DF-T1-GE3 Datasheet (P7-P9)SIE810DF-T1-GE3 Datasheet (P10)
ECAD Model:
Maggiori informazioni:
SIE810DF-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PolarPAK-10
Nome depositato:
TrenchFET, PolarPAK
Confezione:
Bobina
Altezza:
0.8 mm
Lunghezza:
6.15 mm
Serie:
SIE
Larghezza:
5.16 mm
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Parte # Alias:
SIE810DF-GE3
Tags
SIE81, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R
***ure Electronics
MOSFET 20V 236A 125W 1.4mohm @ 10V
***i-Key
MOSFET N-CH 20V 60A POLARPAK
***
N-CHANNEL 20-V (D-S) MOSFET
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
Parte # Mfg. Descrizione Azione Prezzo
SIE810DF-T1-GE3
DISTI # SIE810DF-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 60A POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.8141
SIE810DF-T1-GE3
DISTI # SIE810DF-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE810DF-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.7900
  • 6000:$1.6900
  • 12000:$1.5900
  • 18000:$1.5900
  • 30000:$1.4900
SIE810DF-T1-GE3
DISTI # 781-SIE810DF-GE3
Vishay IntertechnologiesMOSFET 20V 236A 125W 1.4mohm @ 10V
RoHS: Compliant
0
  • 1:$3.4800
  • 10:$2.8800
  • 100:$2.3700
  • 250:$2.3000
  • 500:$2.0900
  • 1000:$2.0800
  • 3000:$2.0700
SIE810DF-T1-GE3Vishay IntertechnologiesMOSFET 20V 236A 125W 1.4mohm @ 10VAmericas -
    Immagine Parte # Descrizione
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3

    MOSFET 20V 60A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3

    MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3-VISHAY

    RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V
    Disponibilità
    Azione:
    Available
    Su ordine:
    1500
    Inserisci la quantità:
    Il prezzo attuale di SIE810DF-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    3,47 USD
    3,47 USD
    10
    2,87 USD
    28,70 USD
    100
    2,36 USD
    236,00 USD
    250
    2,29 USD
    572,50 USD
    500
    2,05 USD
    1 025,00 USD
    1000
    1,73 USD
    1 730,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
    Iniziare con
    Prodotti più recenti
    • SUM70101EL 100 V P-Channel MOSFET
      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
    • SIRA20DP TrenchFET® Gen IV MOSFET
      Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
    • Compare SIE810DF-T1-GE3
      SIE810DFT1E3 vs SIE810DFT1GE3 vs SIE812DF
    • P-Channel MOSFETs
      Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
    • SiP32452, SiP32453 Load Switch
      Vishay's load switches have a low input logic control threshold and a fast turn on time.
    • PowerPAIR®
      Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
    Top