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IRF6629TR1PBF

IRF6629TR1PBF
Mfr. #:
IRF6629TR1PBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 25V 29A DIRECTFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF6629TR1PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6629TR1PBF DatasheetIRF6629TR1PBF Datasheet (P4-P6)IRF6629TR1PBF Datasheet (P7-P9)IRF6629TR1PBF Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
IRF6629, IRF662, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 25V 29A 7-Pin Direct-FET MX T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number
***ment14 APAC
MOSFET, N, DIRECTFET, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Transistor Case Style:MX; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:1170mJ; Base Number:6629; Cont Current Id @ 70°C:23; Current Id Max:23A; Fall Time tf:7.4ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MX; Power Dissipation Pd:2.8mW; Pulse Current Idm:230A; Rise Time:67ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descrizione Azione Prezzo
IRF6629TR1PBF
DISTI # IRF6629TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 25V 29A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6629TR1PBF
    DISTI # IRF6629TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 25V 29A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6629TR1PBF
      DISTI # IRF6629TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 25V 29A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6629TR1PBF
        DISTI # 70018836        		Infineon Technologies AG25V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET MX PKG
        RoHS: Compliant        		0
        • 1000:$1.9300
        • 2000:$1.7600
        IRF6629TR1PBF
        DISTI # 942-IRF6629TR1PBF        		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 2.1mOhms 34nC
        RoHS: Compliant        		0
          IRF6629TR1PBFInternational Rectifier 559
          • 339:$1.5840
          • 157:$1.7760
          • 1:$3.8400
          IRF6629TR1PBFInternational Rectifier 2400
          • 834:$1.0560
          • 482:$1.2000
          • 1:$3.8400
          IRF6629TR1PBF
          DISTI # 1388584          		Infineon Technologies AGMOSFET, N, DIRECTFET, MX
          RoHS: Compliant          		0
          • 1000:$2.2700
          • 500:$2.4400
          • 250:$2.7500
          • 100:$3.0800
          • 10:$3.8100
          • 1:$4.6200
          Immagine Parte # Descrizione
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          Mfr.#: IRF6621TRPBF.

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          		 Nuovo e originale
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          Mfr.#: IRF6620TR1

          OMO.#: OMO-IRF6620TR1-INFINEON-TECHNOLOGIES

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          Mfr.#: IRF6620TRPBF

          OMO.#: OMO-IRF6620TRPBF-INFINEON-TECHNOLOGIES

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          IRF6621TRBF

          Mfr.#: IRF6621TRBF

          OMO.#: OMO-IRF6621TRBF-1190

          		 Nuovo e originale
          IRF6629TRPBF

          Mfr.#: IRF6629TRPBF

          OMO.#: OMO-IRF6629TRPBF-INFINEON-TECHNOLOGIES

          		 MOSFET 25V 1 N-CH HEXFET 2.1mOhms 34nC
          IRF6628TRPBF

          Mfr.#: IRF6628TRPBF

          OMO.#: OMO-IRF6628TRPBF-INFINEON-TECHNOLOGIES

          		 RF Bipolar Transistors MOSFET 25V 1 N-CH HEXFET 2.5mOhms 31nC
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          Mfr.#: IRF6622TRPBF

          OMO.#: OMO-IRF6622TRPBF-INFINEON-TECHNOLOGIES

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          Disponibilità
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          Available
          Su ordine:
          5500
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