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IDM08G120C5XTMA1

IDM08G120C5XTMA1
Mfr. #:
IDM08G120C5XTMA1
Produttore:
Infineon Technologies
Descrizione:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IDM08G120C5XTMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IDM08G120C5XTMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Diodi, Raddrizzatori - Singoli
Serie
thinQ!
Prodotto
Diodi Schottky al carburo di silicio
Confezione
Nastro e bobina (TR)
Alias ​​parziali
IDM08G120C5 SP001162122
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-252-3, DPak (2 Leads + Tab), SC-63
Tecnologia
SiC
Tipo di montaggio
Montaggio superficiale
Pacchetto-dispositivo-fornitore
PG-TO252-2
Configurazione
Separare
Velocità
Fast Recovery = 200mA (Io)
Tipo diodo
Carburo di silicio Schottky
Corrente-Inversa-Dispersione-Vr
40μA @ 1200V
Tensione-Forward-Vf-Max-If
1.95V @ 8A
Tensione-DC-Reverse-Vr-Max
1200V (1.2kV)
Corrente-Media-Rettificata-Io
8A (DC)
Reverse-Tempo di ripristino-trr
-
Capacità-Vr-F
365pF @ 1V, 1MHz
Giunzione-temperatura di esercizio
-55°C ~ 175°C
Pd-Power-Dissipazione
167 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Vf-Forward-Voltage
1.65 V
Vr-tensione inversa
1.2 kV
Ir-corrente-inversa
3 uA
Se-Forward-Current
8 A
Vrrm-ripetitivo-tensione inversa
1.2 kV
Ifsm-Forward-Surge-Current
70 A
Tags
IDM0, IDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IDM08G120C5 Series 1200 V 27 A 5th Generation ThinQ!™SiC Schottky Diode-TO-252-3
***ark
Sic Schottky Diode, 1.2Kv, 27A, To-252; Product Range:thinq 5G 1200V Series; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Continuous Forward Current If:27A; Total Capacitive Charge Qc:28Nc; Diode Case Rohs Compliant: Yes
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Parte # Mfg. Descrizione Azione Prezzo
IDM08G120C5XTMA1
DISTI # V72:2272_09156853		Infineon Technologies AGDiode Schottky 1.2KV 27A 3-Pin(2+Tab) DPAK T/R2480
  • 1000:$3.4910
  • 500:$3.9620
  • 250:$4.3670
  • 100:$4.5430
  • 25:$5.0240
  • 10:$5.3210
  • 1:$5.7810
IDM08G120C5XTMA1
DISTI # IDM08G120C5XTMA1CT-ND		Infineon Technologies AGDIODE SCHOTTKY 1200V 8A TO252-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		872In Stock
  • 1000:$4.0508
  • 500:$4.6510
  • 100:$5.3411
  • 10:$6.4510
  • 1:$7.1400
IDM08G120C5XTMA1
DISTI # IDM08G120C5XTMA1DKR-ND		Infineon Technologies AGDIODE SCHOTTKY 1200V 8A TO252-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		872In Stock
  • 1000:$4.0508
  • 500:$4.6510
  • 100:$5.3411
  • 10:$6.4510
  • 1:$7.1400
IDM08G120C5XTMA1
DISTI # IDM08G120C5XTMA1TR-ND		Infineon Technologies AGDIODE SCHOTTKY 1200V 8A TO252-2
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$3.8843
IDM08G120C5XTMA1
DISTI # 26196085		Infineon Technologies AGDiode Schottky 1.2KV 27A 3-Pin(2+Tab) DPAK T/R2480
  • 1000:$3.4910
  • 500:$3.9620
  • 250:$4.3670
  • 100:$4.5430
  • 25:$5.0240
  • 10:$5.3210
  • 2:$5.7810
IDM08G120C5XTMA1
DISTI # IDM08G120C5XTMA1		Infineon Technologies AGDiode Schottky Diode 1200V 27A 2-Pin TO-252 T/R - Tape and Reel (Alt: IDM08G120C5XTMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$3.8900
  • 5000:$3.7900
  • 10000:$3.6900
  • 15000:$3.4900
  • 25000:$3.4900
IDM08G120C5XTMA1
DISTI # 34AC1582		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 27A, TO-252,Product Range:thinQ 5G 1200V Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:27A,Total Capacitive Charge Qc:28nC,Diode Case , RoHS Compliant: Yes2445
  • 1:$6.6000
  • 10:$5.9700
  • 25:$5.6900
  • 50:$5.3200
  • 100:$4.9400
  • 250:$4.7200
  • 500:$4.3100
  • 1000:$3.7500
IDM08G120C5XTMA1Infineon Technologies AG 
RoHS: Not Compliant		2210
  • 1000:$4.2500
  • 500:$4.4700
  • 100:$4.6600
  • 25:$4.8600
  • 1:$5.2300
IDM08G120C5XTMA1
DISTI # 726-IDM08G120C5XTMA1		Infineon Technologies AGSchottky Diodes & Rectifiers SIC CHIP/DISCRETE
RoHS: Compliant		2018
  • 1:$6.6000
  • 10:$5.9700
  • 25:$5.6900
  • 100:$4.9400
  • 250:$4.7200
  • 500:$4.3100
  • 1000:$3.7500
  • 2500:$3.6100
IDM08G120C5XTMA1
DISTI # C1S322000624474		Infineon Technologies AGRectifier Diodes
RoHS: Compliant		2480
  • 250:$4.3670
  • 100:$4.5430
  • 25:$5.0240
  • 10:$5.3210
  • 1:$5.7810
IDM08G120C5XTMA1
DISTI # 2780806		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 27A, TO-252
RoHS: Compliant		2460
  • 1:£5.2000
  • 5:£4.8400
  • 10:£4.4700
  • 50:£4.1800
  • 100:£3.8900
IDM08G120C5XTMA1
DISTI # 2780806		Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 27A, TO-252
RoHS: Compliant		2445
  • 1:$8.5700
  • 5:$8.0100
  • 10:$7.0800
  • 50:$6.7000
  • 100:$6.3500
  • 250:$6.0400
Immagine Parte # Descrizione
IDM08G120C5XTMA1

Mfr.#: IDM08G120C5XTMA1

OMO.#: OMO-IDM08G120C5XTMA1

 Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
IDM08G120C5XTMA1

Mfr.#: IDM08G120C5XTMA1

OMO.#: OMO-IDM08G120C5XTMA1-INFINEON-TECHNOLOGIES

 Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Disponibilità
Azione:
Available
Su ordine:
2000
Inserisci la quantità:
Il prezzo attuale di IDM08G120C5XTMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
5,24 USD
5,24 USD
10
4,97 USD
49,73 USD
100
4,71 USD
471,15 USD
500
4,45 USD
2 224,90 USD
1000
4,19 USD
4 188,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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