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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI7858ADP-T1-GE3 DISTI # SI7858ADP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 12V 20A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI7858ADP-T1-GE3 DISTI # SI7858ADP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 12V 20A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI7858ADP-T1-GE3 DISTI # SI7858ADP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 12V 20A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI7858ADP-T1-GE3 DISTI # SI7858ADP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 12V 20A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7858ADP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI7858ADP-T1-GE3 DISTI # 33P5434 | Vishay Intertechnologies | N CHANNEL MOSFET, 12V, 20A, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:950mV RoHS Compliant: Yes | 0 |
|
| SI7858ADP-T1-GE3 DISTI # 26R1939 | Vishay Intertechnologies | N CHANNEL MOSFET, 12V, 20A,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:950mV,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| SI7858ADP-T1-GE3 DISTI # 781-SI7858ADP-T1-GE3 | Vishay Intertechnologies | MOSFET 12V 29A 5.4W 2.6mohm @ 4.5V RoHS: Compliant | 1416 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: X9313ZSIZ OMO.#: OMO-X9313ZSIZ |
Digital Potentiometer ICs 1KOHM EEPOT(TMPOT CMOS 8LD IND |
|
Mfr.#: SI4800BDY-T1-E3 OMO.#: OMO-SI4800BDY-T1-E3 |
MOSFET 30V 9A 2.5W |
|
Mfr.#: SI4800BDY-T1-E3 OMO.#: OMO-SI4800BDY-T1-E3-VISHAY |
MOSFET N-CH 30V 6.5A 8-SOIC |
|
|
Mfr.#: X9313ZSIZ OMO.#: OMO-X9313ZSIZ-INTERSIL |
Digital Potentiometer ICs 1KOHM EEPOT(TMPOT CMOS 8LD IND |
