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IRF6631TR1PBF

IRF6631TR1PBF
Mfr. #:
IRF6631TR1PBF
Produttore:
Infineon / IR
Descrizione:
MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF6631TR1PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6631TR1PBF DatasheetIRF6631TR1PBF Datasheet (P4-P6)IRF6631TR1PBF Datasheet (P7-P9)IRF6631TR1PBF Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
DirectFET-SQ
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
13 A
Rds On - Resistenza Drain-Source:
10.8 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
12 nC
Pd - Dissipazione di potenza:
42 W
Configurazione:
Separare
Confezione:
Bobina
Altezza:
0.7 mm
Lunghezza:
4.85 mm
Tipo di transistor:
1 N-Channel
Larghezza:
3.95 mm
Marca:
Infineon / IR
Sensibile all'umidità:
sì
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Parte # Alias:
SP001529226
Tags
IRF6631, IRF663, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 13A 6-Pin Direct-FET SQ T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):7.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET SQ ;RoHS Compliant: Yes
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 57 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N, DIRECTFET, SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.2mW; Transistor Case Style:DirectFET SQ; No. of Pins:5Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:13mJ; Base Number:6631; Cont Current Id @ 70°C:10A; Current Id Max:10A; Fall Time tf:4.9ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Pulse Current Idm:100A; Rise Time:18ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:Surface Mount Device; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descrizione Azione Prezzo
IRF6631TR1PBF
DISTI # IRF6631TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 13A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6631TR1PBF
    DISTI # IRF6631TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 30V 13A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6631TR1PBF
      DISTI # IRF6631TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 30V 13A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6631TR1PBF
        DISTI # 70018837        		Infineon Technologies AG30V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET SQ PKG
        RoHS: Compliant        		0
        • 1000:$1.0900
        • 2000:$0.9900
        • 3000:$0.9100
        • 4000:$0.8400
        • 5000:$0.7800
        IRF6631TR1PBF
        DISTI # 942-IRF6631TR1PBF        		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET DIRECTFET SQ
        RoHS: Compliant        		0
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          Disponibilità
          Azione:
          Available
          Su ordine:
          2500
          Inserisci la quantità:
          Il prezzo attuale di IRF6631TR1PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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