IRFW520ATM

IRFW520ATM
Mfr. #:
IRFW520ATM
Produttore:
Rochester Electronics, LLC
Descrizione:
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFW520ATM Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
IRFW5, IRFW, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
MOSFETs 100V N-Channel A-FET
***i-Key
N-CHANNEL POWER MOSFET
***icroelectronics
N-channel 525 V, 0.41 Ohm, 10 A SuperMESH3(TM) Power MOSFET in D2PAK package
***et
Trans MOSFET N-CH 525V 10A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 10A I(D), 525V, 0.51ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 525V, 10A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 525V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***ser
MOSFETs N-Ch/600V/7a/1.2Ohm
***i-Key
N-CHANNEL POWER MOSFET
Parte # Mfg. Descrizione Azione Prezzo
IRFW520ATMFairchild Semiconductor CorporationPower Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
774
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
Immagine Parte # Descrizione
IRFW510ATM

Mfr.#: IRFW510ATM

OMO.#: OMO-IRFW510ATM-1190

MOSFET
IRFW520ATM

Mfr.#: IRFW520ATM

OMO.#: OMO-IRFW520ATM-1190

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IRFW520ATMFSC

Mfr.#: IRFW520ATMFSC

OMO.#: OMO-IRFW520ATMFSC-1190

Nuovo e originale
IRFW530

Mfr.#: IRFW530

OMO.#: OMO-IRFW530-1190

Nuovo e originale
IRFW530ATM

Mfr.#: IRFW530ATM

OMO.#: OMO-IRFW530ATM-1190

MOSFET 100V N-Channel A-FET
IRFW530ATM-NL

Mfr.#: IRFW530ATM-NL

OMO.#: OMO-IRFW530ATM-NL-1190

Nuovo e originale
IRFW540

Mfr.#: IRFW540

OMO.#: OMO-IRFW540-1190

Nuovo e originale
IRFW540ATM_NL

Mfr.#: IRFW540ATM_NL

OMO.#: OMO-IRFW540ATM-NL-1190

Nuovo e originale
IRFW550A

Mfr.#: IRFW550A

OMO.#: OMO-IRFW550A-1190

Nuovo e originale
IRFW550ATM

Mfr.#: IRFW550ATM

OMO.#: OMO-IRFW550ATM-1190

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di IRFW520ATM è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,57 USD
0,57 USD
10
0,54 USD
5,42 USD
100
0,51 USD
51,30 USD
500
0,48 USD
242,25 USD
1000
0,46 USD
456,00 USD
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