SIHB24N65E-GE3

Mfr. #:: SIHB24N65E-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIHB24N65E-GE3 Scheda dati
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HTML Datasheet:: SIHB24N65E-GE3 Datasheet SIHB24N65E-GE3 Datasheet (P4-P6)SIHB24N65E-GE3 Datasheet (P7-P9)
ECAD Model:
Maggiori informazioni:: SIHB24N65E-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-263-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 700 V

Id - Corrente di scarico continua:: 24 A

Rds On - Resistenza Drain-Source:: 145 mOhms

Vgs th - Tensione di soglia gate-source:: 4 V

Vgs - Tensione Gate-Source:: 30 V

Qg - Carica cancello:: 81 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 250 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Tubo

Serie:: E

Marca:: Vishay / Siliconix

Tempo di caduta:: 69 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 84 ns

Quantità confezione di fabbrica:: 1000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 70 ns

Tempo di ritardo di accensione tipico:: 24 ns

Unità di peso:: 0.050717 oz

Tags: SIHB24, SIHB2, SIHB, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHB24N65E-GE3 Descrizione

***ure Electronics: E-Series N-Channel 650 V 0.145 O 122 nC Surface Mount Power Mosfet - D2PAK

***et: Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK

***nell: MOSFET, N-CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

SIHB24N65E-GE3 Maggiori informazioni

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIHB24N65E-GE3 DISTI # 26884872	Vishay Intertechnologies	Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK RoHS: Compliant	272	22:$3.6462
SIHB24N65E-GE3 DISTI # SIHB24N65E-GE3-ND	Vishay Siliconix	MOSFET N-CH 650V 24A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube	992In Stock	3000:$2.9745 1000:$3.1311 100:$4.3612 25:$5.0320 10:$5.3230 1:$5.9300
SIHB24N65E-GE3 DISTI # V36:1790_09219020	Vishay Intertechnologies	Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK RoHS: Compliant	0	1000:$2.9040
SIHB24N65E-GE3 DISTI # SIHB24N65E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SIHB24N65E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$2.7308 6000:$2.8063 4000:$2.8862 2000:$3.0085 1000:$3.1004
SIHB24N65E-GE3 DISTI # SIHB24N65E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK (Alt: SIHB24N65E-GE3) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€2.1900 100:€2.2900 500:€2.2900 50:€2.3900 25:€2.6900 10:€3.2900 1:€4.1900
SIHB24N65E-GE3 DISTI # 68W7035	Vishay Intertechnologies	Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK - Product that comes on tape, but is not reeled (Alt: 68W7035) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	500:$4.4500 250:$4.9400 100:$5.0900 50:$5.4500 25:$5.8300 10:$6.1900 1:$7.4600
SIHB24N65E-GE3 DISTI # 68W7036	Vishay Intertechnologies	MOSFET, N CH, 650V, 24A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes	0	20000:$2.6200 12000:$2.6700 8000:$2.7700 4000:$2.9900 2000:$3.2000 1:$3.3500
SIHB24N65E-GE3 DISTI # 68W7035	Vishay Intertechnologies	MOSFET, N CHANNEL, 650V, 24A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes	272	1:$2.3700 10:$2.3700 25:$2.3700 50:$2.3700 100:$2.3700 250:$2.3700
SIHB24N65E-GE3 DISTI # 78-SIHB24N65E-GE3	Vishay Intertechnologies	MOSFET 650V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	2950	1:$5.9600 10:$4.9400 100:$4.0600 250:$3.9400 500:$3.5300 1000:$2.9800 2000:$2.8300
SIHB24N65E-E3 DISTI # 781-SIHB24N65E-E3	Vishay Intertechnologies	MOSFET 650V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	0	1000:$2.9800 2000:$2.8300
SIHB24N65E-GE3 DISTI # 2283632	Vishay Intertechnologies	MOSFET, N-CH, 650V, 24A, D2PAK RoHS: Compliant	1258	3000:$4.5000 1000:$4.7200 100:$6.5800 25:$7.5900 10:$8.0300 1:$8.9400
SIHB24N65E-GE3 DISTI # 2283632	Vishay Intertechnologies	MOSFET, N-CH, 650V, 24A, D2PAK	1269	500:£2.8200 250:£3.0400 100:£3.1300 10:£3.8100 1:£5.0700
SIHB24N65E-GE3	Vishay Intertechnologies	MOSFET 650V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	Americas -	10:$3.8640

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Disponibilità

Azione:: Available
Su ordine:: 1985
Inserisci la quantità:

Il prezzo attuale di SIHB24N65E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~5,96 USD~~; ~~5,96 USD~~

10: ~~4,94 USD~~; ~~49,40 USD~~

100: ~~4,06 USD~~; ~~406,00 USD~~

250: ~~3,94 USD~~; ~~985,00 USD~~

500: ~~3,53 USD~~; ~~1 765,00 USD~~

1000: ~~2,98 USD~~; ~~2 980,00 USD~~

2000: ~~2,83 USD~~; ~~5 660,00 USD~~

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SIHB24N65E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes