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ZXMN6A08KTC

ZXMN6A08KTC
Mfr. #:
ZXMN6A08KTC
Produttore:
Diodes Incorporated
Descrizione:
MOSFET 60V N-Channel MOSFET 20V VGS 24.3A IDM
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
ZXMN6A08KTC Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Diodi incorporati
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
7.9 A
Rds On - Resistenza Drain-Source:
80 mOhms
Vgs th - Tensione di soglia gate-source:
1 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
5.8 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
4.13 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Serie:
ZXMN6
Tipo di transistor:
1 N-Channel
Marca:
Diodi incorporati
Transconduttanza diretta - Min:
6.6 S
Tempo di caduta:
4.6 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
2.1 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
12.3 ns
Tempo di ritardo di accensione tipico:
2.6 ns
Unità di peso:
0.011993 oz
Tags
ZXMN6A08, ZXMN6A0, ZXMN6A, ZXMN6, ZXMN, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 0.15 Ohm 3.8 nC 8.94 mW Silicon SMT Mosfet - TO-252-3
***ark
Mosfet, N-Ch, 60V, 5.36A, To-252 Rohs Compliant: Yes
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
*** Services
CoC and 2-years warranty / RFQ for pricing
***ure Electronics
N-Channel 60 V 68 mOhm Surface Mount Enhancement Mode Mosfet - TO252-3L
***p One Stop
Trans MOSFET N-CH 60V 8.5A Automotive 3-Pin(2+Tab) TO-252 T/R
***nell
MOSFET, N-CH, 60V, 6A, TO252; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 4.12W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***des Inc SCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***(Formerly Allied Electronics)
MOSFET N-Channel 60V 8.5A TO252
***p One Stop Global
Trans MOSFET N-CH 60V 16A 3-Pin(2+Tab) TO-252
*** Electronics
OPTLMOS N-CHANNEL POWER MOSFET
***et
N-KANAL POWER MOS
***ical
Trans MOSFET P-CH 60V 8.2A Automotive 3-Pin(2+Tab) DPAK T/R
***ure Electronics
P-Channel 60 V 0.085 O Surface Mount Power MOSFET - TO-252
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGS
***(Formerly Allied Electronics)
MOSFET P-Channel 60V 8.2A DPAK
***ark
MOSFET, P, 60V, D-PAK ;ROHS COMPLIANT: YES
***el Electronic
DIODES INC. - ZXMP6A16KTC - MOSFET, P, 60V, D-PAK
***ment14 APAC
MOSFET, P, 60V, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:8.2A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:9.76W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; Current Id Max:-8.2A; Package / Case:DPAK; Power Dissipation Pd:9.76W; Termination Type:SMD; Voltage Vds Typ:-60V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
***Yang
PWR MOS ULTRAFET 60V/17A/0.088 OHMS N-CH LL TO-252AA - Bulk
***i-Key Marketplace
MOSFET N-CH 60V 18A TO252AA
***ser
MOSFETs 17a, 60V N-Channel Logic Level
***el Nordic
Contact for details
***ure Electronics
Single N-Channel 55V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA
***klin Elektronik
INFINEON SMD MOSFET NFET 55V 17A 75mΩ 175°C TO-252 IRFR024NTRPBF
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N-CH, 55V, 17A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 27 / Rise Time ns = 34 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 4.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 45
***ponent Stockers USA
19 A 55 V 0.07 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ser
MOSFETs 19a, 55V N-Channel UltraFET
***et
PWR MOS ULTRAFET 55V/19A/0.070OHMS N-CHANNEL TO-252AA
Parte # Mfg. Descrizione Azione Prezzo
ZXMN6A08KTC
DISTI # 26572885		Zetex / Diodes IncTrans MOSFET N-CH 60V 7.9A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		20000
  • 2500:$0.2062
ZXMN6A08KTC
DISTI # ZXMN6A08KTCCT-ND		Diodes IncorporatedMOSFET N-CH 60V 5.36A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8611In Stock
  • 1000:$0.2991
  • 500:$0.3739
  • 100:$0.5048
  • 10:$0.6540
  • 1:$0.7500
ZXMN6A08KTC
DISTI # ZXMN6A08KTCDKR-ND		Diodes IncorporatedMOSFET N-CH 60V 5.36A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8611In Stock
  • 1000:$0.2991
  • 500:$0.3739
  • 100:$0.5048
  • 10:$0.6540
  • 1:$0.7500
ZXMN6A08KTC
DISTI # ZXMN6A08KTCTR-ND		Diodes IncorporatedMOSFET N-CH 60V 5.36A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		7500In Stock
  • 2500:$0.2632
ZXMN6A08KTC
DISTI # 70550626		Diodes Incorporated60V N-Ch Enhancement Mode MOSFET DPAK
RoHS: Compliant		0
  • 125:$0.4300
  • 250:$0.3800
  • 1250:$0.3400
  • 2500:$0.3000
ZXMN6A08KTC
DISTI # 522-ZXMN6A08KTC		Diodes IncorporatedMOSFET 60V N-Channel MOSFET 20V VGS 24.3A IDM
RoHS: Compliant		3589
  • 1:$0.6200
  • 10:$0.5120
  • 100:$0.3300
  • 1000:$0.2640
ZXMN6A08KTC
DISTI # 8231889P		Zetex / Diodes Inc60V N-CH ENHANCEMENT MODE MOSFET DPAK, RL7100
  • 250:£0.1650
Immagine Parte # Descrizione
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IXDN609SIATR

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Mfr.#: L6385ED

OMO.#: OMO-L6385ED

 Gate Drivers HV H-Bridge driver
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Mfr.#: ISO7421FEDR

OMO.#: OMO-ISO7421FEDR

 Digital Isolators Lo-Pwr Dual Channel Dig Iso
ISO7420FEDR

Mfr.#: ISO7420FEDR

OMO.#: OMO-ISO7420FEDR

 Digital Isolators Lo-Pwr Dual Channel Dig Iso
LP38690DT-3.3/NOPB

Mfr.#: LP38690DT-3.3/NOPB

OMO.#: OMO-LP38690DT-3-3-NOPB

 LDO Voltage Regulators 1A LDO CMOS Linear Reg
ATSAMD21J18A-AUT

Mfr.#: ATSAMD21J18A-AUT

OMO.#: OMO-ATSAMD21J18A-AUT

 ARM Microcontrollers - MCU 256KB 32KB 64TQFP GRN1.6-3.6V48MHz
E3A-T220-25E

Mfr.#: E3A-T220-25E

OMO.#: OMO-E3A-T220-25E

 Heat Sinks Black Anodized Heatsink for D34
IXDN609SIATR

Mfr.#: IXDN609SIATR

OMO.#: OMO-IXDN609SIATR-IXYS-INTEGRATED-CIRCUITS-DIVIS

 Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
L6385ED

Mfr.#: L6385ED

OMO.#: OMO-L6385ED-STMICROELECTRONICS

 Gate Drivers HV H-Bridge drive
Disponibilità
Azione:
Available
Su ordine:
1986
Inserisci la quantità:
Il prezzo attuale di ZXMN6A08KTC è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,61 USD
0,61 USD
10
0,51 USD
5,12 USD
100
0,33 USD
33,00 USD
1000
0,26 USD
264,00 USD
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