FDT86113LZ

FDT86113LZ
Mfr. #:
FDT86113LZ
Produttore:
ON Semiconductor
Descrizione:
MOSFET N-CH 100V 3.3A SOT223
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDT86113LZ Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
FDT86113LZ maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Fairchild Semiconductor
categoria di prodotto
FET - Single
Serie
PowerTrenchR
Confezione
Imballaggio alternativo Digi-ReelR
Unità di peso
0.008826 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-261-4, TO-261AA
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
SOT-223-4
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
1W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
100V
Ingresso-Capacità-Ciss-Vds
315pF @ 50V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
3.3A (Tc)
Rds-On-Max-Id-Vgs
100 mOhm @ 3.3A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Carica-Qg-Vgs
6.8nC @ 10V
Pd-Power-Dissipazione
2.2 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
1.5 ns
Ora di alzarsi
1.3 ns
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuo-Scarico-Corrente
3.3 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.7 V
Rds-On-Drain-Source-Resistenza
100 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
10 ns
Tempo di ritardo all'accensione tipico
3.8 ns
Qg-Gate-Carica
4.1 nC
Transconduttanza diretta-Min
8 S
Tags
FDT861, FDT8, FDT
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 0.1 ohm Surface Mount PowerTrench Mosfet - SOT-223
***Semiconductor
N-Channel PowerTrench® MOSFET 100V, 3.3A, 100mΩ
***et Europe
Trans MOSFET N-CH 100V 3.3A 4-Pin(3+Tab) SOT-223 T/R
***nell
MOSFET, N CH, 100V, 3.3A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:2.5V
***rchild Semiconductor
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descrizione Azione Prezzo
FDT86113LZ
DISTI # FDT86113LZCT-ND
ON SemiconductorMOSFET N-CH 100V 3.3A SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6120In Stock
  • 1000:$0.3626
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
FDT86113LZ
DISTI # FDT86113LZDKR-ND
ON SemiconductorMOSFET N-CH 100V 3.3A SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6120In Stock
  • 1000:$0.3626
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
FDT86113LZ
DISTI # FDT86113LZTR-ND
ON SemiconductorMOSFET N-CH 100V 3.3A SOT223
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
4000In Stock
  • 4000:$0.3190
FDT86113LZ
DISTI # FDT86113LZ
ON SemiconductorTrans MOSFET N-CH 100V 3.3A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FDT86113LZ)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 0
  • 4000:$0.2609
  • 8000:$0.2589
  • 16000:$0.2559
  • 24000:$0.2529
  • 40000:$0.2459
FDT86113LZ
DISTI # FDT86113LZ
ON SemiconductorTrans MOSFET N-CH 100V 3.3A 4-Pin(3+Tab) SOT-223 T/R (Alt: FDT86113LZ)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Asia - 0
    FDT86113LZ
    DISTI # 88T3370
    ON SemiconductorTrans MOSFET N-CH 100V 3.3A 3-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 88T3370)
    RoHS: Compliant
    Min Qty: 5
    Container: Ammo Pack
    Americas - 0
    • 1:$0.7500
    • 10:$0.6200
    • 25:$0.5470
    • 50:$0.4730
    • 100:$0.4000
    • 250:$0.3730
    • 500:$0.3470
    FDT86113LZ
    DISTI # 54T8362
    ON SemiconductorMOSFET Transistor, N Channel, 3.3 A, 100 V, 0.075 ohm, 10 V, 1.7 V0
    • 1:$0.2720
    • 4000:$0.2720
    • 8000:$0.2700
    • 12000:$0.2660
    • 20000:$0.2540
    FDT86113LZ
    DISTI # 88T3370
    ON SemiconductorMOSFET, N CHANNEL, 100V, 3.3A, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:3.3A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes6255
    • 1:$0.7500
    • 10:$0.6200
    • 25:$0.5470
    • 50:$0.4730
    • 100:$0.4000
    • 250:$0.3730
    • 500:$0.3470
    • 1000:$0.3200
    FDT86113LZ
    DISTI # 512-FDT86113LZ
    ON SemiconductorMOSFET 100V N-Channel PowerTrench MOSFET
    RoHS: Compliant
    0
    • 1:$0.7500
    • 10:$0.6200
    • 100:$0.4000
    • 1000:$0.3200
    • 4000:$0.2710
    FDT86113LZ
    DISTI # 7599715P
    ON SemiconductorMOSFET N-CHANNEL 100V 3.3A SOT223, RL1795
    • 50:£0.3480
    • 500:£0.2080
    • 2500:£0.1900
    • 5000:£0.1840
    FDT86113LZON Semiconductor 23500
      FDT86113LZ
      DISTI # 2083343RL
      ON SemiconductorMOSFET, N CH, 100V, 3.3A, SOT-223
      RoHS: Compliant
      0
      • 1:$1.1900
      • 10:$0.9810
      • 100:$0.6340
      • 1000:$0.5070
      • 4000:$0.4290
      • 8000:$0.4130
      • 24000:$0.3960
      • 48000:$0.3910
      FDT86113LZ
      DISTI # 2083343
      ON SemiconductorMOSFET, N CH, 100V, 3.3A, SOT-223
      RoHS: Compliant
      6255
      • 1:$1.1900
      • 10:$0.9810
      • 100:$0.6340
      • 1000:$0.5070
      • 4000:$0.4290
      • 8000:$0.4130
      • 24000:$0.3960
      • 48000:$0.3910
      FDT86113LZ
      DISTI # 2083343
      ON SemiconductorMOSFET, N CH, 100V, 3.3A, SOT-223
      RoHS: Compliant
      7105
      • 5:£0.5280
      • 25:£0.4860
      • 100:£0.3030
      • 250:£0.2700
      • 500:£0.2380
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      OMO.#: OMO-FDT86244-CUT-TAPE-1190

      Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      2500
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