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SIHB100N60E-GE3

SIHB100N60E-GE3
Mfr. #:
SIHB100N60E-GE3
Produttore:
Vishay
Descrizione:
E Series Power MOSFET D2PAK (TO-263), 100 m @ 10V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHB100N60E-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIHB100N60E-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SIHB10, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHB100N60E-GE3
DISTI # V72:2272_22759358		Vishay IntertechnologiesE Series Power MOSFET D2PAK (TO-263), 100 m @ 10V997
  • 75000:$2.4230
  • 30000:$2.4970
  • 15000:$2.5709
  • 6000:$2.6450
  • 3000:$2.7190
  • 1000:$2.7930
  • 500:$2.8670
  • 250:$3.0950
  • 100:$3.1840
  • 50:$3.7040
  • 25:$4.1110
  • 10:$4.1960
  • 1:$5.5286
SIHB100N60E-GE3
DISTI # SIHB100N60E-GE3-ND		Vishay SiliconixMOSFET E SERIES 600V D2PAK (TO-2
RoHS: Compliant
Min Qty: 1
Container: Tube		1002In Stock
  • 3000:$2.5444
  • 1000:$2.6783
  • 100:$3.7305
  • 25:$4.3044
  • 10:$4.5530
  • 1:$5.0700
SIHB100N60E-GE3
DISTI # 31697667		Vishay IntertechnologiesE Series Power MOSFET D2PAK (TO-263), 100 m @ 10V997
  • 6000:$2.6450
  • 3000:$2.7190
  • 1000:$2.7930
  • 500:$2.8670
  • 250:$3.0950
  • 100:$3.1840
  • 50:$3.7040
  • 25:$4.1110
  • 10:$4.1960
  • 3:$5.5286
SIHB100N60E-GE3
DISTI # SIHB100N60E-GE3		Vishay IntertechnologiesN-CHANNEL 600V - Tape and Reel (Alt: SIHB100N60E-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$2.2900
  • 4000:$2.3900
  • 6000:$2.3900
  • 2000:$2.4900
  • 1000:$2.5900
SIHB100N60E-GE3
DISTI # 03AH2966		Vishay IntertechnologiesMOSFET, N-CH, 30A, 600V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.086ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes50
  • 500:$3.0500
  • 100:$3.5100
  • 50:$3.7600
  • 25:$4.0100
  • 10:$4.2600
  • 1:$5.1500
SIHB100N60E-GE3
DISTI # 78-SIHB100N60E-GE3		Vishay IntertechnologiesMOSFET 650V Vds,30V Vgs D2PAK (TO-263)
RoHS: Compliant		985
  • 1:$5.1000
  • 10:$4.2200
  • 100:$3.4700
  • 250:$3.3700
  • 500:$3.0200
  • 1000:$2.5500
  • 2000:$2.4200
SIHB100N60E-GE3
DISTI # 3019075		Vishay IntertechnologiesMOSFET, N-CH, 30A, 600V, TO-263
RoHS: Compliant		50
  • 1000:$3.2300
  • 500:$3.5500
  • 250:$3.7900
  • 100:$3.9200
  • 10:$4.7700
  • 1:$5.9600
SIHB100N60E-GE3
DISTI # 3019075		Vishay IntertechnologiesMOSFET, N-CH, 30A, 600V, TO-26350
  • 500:£2.2600
  • 250:£2.5200
  • 100:£2.6000
  • 10:£3.1500
  • 1:£4.2400
Immagine Parte # Descrizione
SIHB100N60E-GE3

Mfr.#: SIHB100N60E-GE3

OMO.#: OMO-SIHB100N60E-GE3

 MOSFET 650V Vds; 30V Vgs D2PAK (TO-263)
SIHB100N60E-GE3

Mfr.#: SIHB100N60E-GE3

OMO.#: OMO-SIHB100N60E-GE3-VISHAY

 E Series Power MOSFET D2PAK (TO-263), 100 m @ 10V
Disponibilità
Azione:
Available
Su ordine:
3500
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