SIHB100N60E-GE3

Mfr. #:: SIHB100N60E-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 650V Vds; 30V Vgs D2PAK (TO-263)
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIHB100N60E-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:
Maggiori informazioni:: SIHB100N60E-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-263-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 600 V

Id - Corrente di scarico continua:: 30 A

Rds On - Resistenza Drain-Source:: 100 mOhms

Vgs th - Tensione di soglia gate-source:: 3 V

Vgs - Tensione Gate-Source:: 30 V

Qg - Carica cancello:: 50 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 208 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Bobina

Serie:: E

Tipo di transistor:: 1 N-Channel

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 11 S

Tempo di caduta:: 20 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 34 ns

Quantità confezione di fabbrica:: 1000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 33 ns

Tempo di ritardo di accensione tipico:: 21 ns

Tags: SIHB10, SIHB1, SIHB, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHB100N60E-GE3 Maggiori informazioni

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIHB100N60E-GE3 DISTI # V72:2272_22759358	Vishay Intertechnologies	E Series Power MOSFET D2PAK (TO-263), 100 m @ 10V	997	75000:$2.4230 30000:$2.4970 15000:$2.5709 6000:$2.6450 3000:$2.7190 1000:$2.7930 500:$2.8670 250:$3.0950 100:$3.1840 50:$3.7040 25:$4.1110 10:$4.1960 1:$5.5286
SIHB100N60E-GE3 DISTI # SIHB100N60E-GE3-ND	Vishay Siliconix	MOSFET E SERIES 600V D2PAK (TO-2 RoHS: Compliant Min Qty: 1 Container: Tube	1002In Stock	3000:$2.5444 1000:$2.6783 100:$3.7305 25:$4.3044 10:$4.5530 1:$5.0700
SIHB100N60E-GE3 DISTI # 31697667	Vishay Intertechnologies	E Series Power MOSFET D2PAK (TO-263), 100 m @ 10V	997	6000:$2.6450 3000:$2.7190 1000:$2.7930 500:$2.8670 250:$3.0950 100:$3.1840 50:$3.7040 25:$4.1110 10:$4.1960 3:$5.5286
SIHB100N60E-GE3 DISTI # SIHB100N60E-GE3	Vishay Intertechnologies	N-CHANNEL 600V - Tape and Reel (Alt: SIHB100N60E-GE3) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$2.2900 4000:$2.3900 6000:$2.3900 2000:$2.4900 1000:$2.5900
SIHB100N60E-GE3 DISTI # 03AH2966	Vishay Intertechnologies	MOSFET, N-CH, 30A, 600V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.086ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes	50	500:$3.0500 100:$3.5100 50:$3.7600 25:$4.0100 10:$4.2600 1:$5.1500
SIHB100N60E-GE3 DISTI # 78-SIHB100N60E-GE3	Vishay Intertechnologies	MOSFET 650V Vds,30V Vgs D2PAK (TO-263) RoHS: Compliant	985	1:$5.1000 10:$4.2200 100:$3.4700 250:$3.3700 500:$3.0200 1000:$2.5500 2000:$2.4200
SIHB100N60E-GE3 DISTI # 3019075	Vishay Intertechnologies	MOSFET, N-CH, 30A, 600V, TO-263 RoHS: Compliant	50	1000:$3.2300 500:$3.5500 250:$3.7900 100:$3.9200 10:$4.7700 1:$5.9600
SIHB100N60E-GE3 DISTI # 3019075	Vishay Intertechnologies	MOSFET, N-CH, 30A, 600V, TO-263	50	500:£2.2600 250:£2.5200 100:£2.6000 10:£3.1500 1:£4.2400

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	Mfr.#: QH08TZ600 OMO.#: OMO-QH08TZ600-POWER-INTEGRATIONS	Schottky Diodes & Rectifiers H-Series 600V 8A Super-Low Q
	Mfr.#: STTH12R06D OMO.#: OMO-STTH12R06D-STMICROELECTRONICS	DIODE GEN PURP 600V 12A TO220AC
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Disponibilità

Azione:: 985
Su ordine:: 2968
Inserisci la quantità:

Il prezzo attuale di SIHB100N60E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~5,10 USD~~; ~~5,10 USD~~

10: ~~4,22 USD~~; ~~42,20 USD~~

100: ~~3,47 USD~~; ~~347,00 USD~~

250: ~~3,37 USD~~; ~~842,50 USD~~

500: ~~3,02 USD~~; ~~1 510,00 USD~~

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SIHB10 3
SIHB1 27
SIHB 76
SIH 797

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SIHB100N60E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes