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SI7772DP-T1-GE3

SI7772DP-T1-GE3
Mfr. #:
SI7772DP-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 30V 35.6A PPAK SO-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI7772DP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
SI7772DP-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
VIS
categoria di prodotto
FET - Single
Confezione
Bobina
Alias ​​parziali
SI7772DP-GE3
Unità di peso
0.017870 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
SO-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Singolo con diodo Schottky
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
29.8 W
Vgs-Gate-Source-Voltage
2.5 V
Id-Continuo-Scarico-Corrente
35.6 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistenza
13 mOhms
Polarità del transistor
Canale N
Tags
SI77, SI7
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 13 mOhm SMT TrenchFET Gen III Power Mosfet - PowerPAK SO-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35.6A; On Resistance Rds(On):0.0105Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
***ment14 APAC
MOSFET,N CH,SC DIO,30V,35.6A,SO8PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):10500µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.9A; Power Dissipation Pd:3.9W; Voltage Vgs Max:20V
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Parte # Mfg. Descrizione Azione Prezzo
SI7772DP-T1-GE3
DISTI # V72:2272_09215678		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R
RoHS: Compliant		5930
  • 3000:$0.2938
  • 1000:$0.3135
  • 500:$0.3648
  • 250:$0.4058
  • 100:$0.4252
  • 25:$0.5137
  • 10:$0.5241
  • 1:$0.6158
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 35.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8242In Stock
  • 1000:$0.3716
  • 500:$0.4645
  • 100:$0.6271
  • 10:$0.8130
  • 1:$0.9300
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 35.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8242In Stock
  • 1000:$0.3716
  • 500:$0.4645
  • 100:$0.6271
  • 10:$0.8130
  • 1:$0.9300
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 35.6A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.3270
SI7772DP-T1-GE3
DISTI # 26730596		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R
RoHS: Compliant		5930
  • 3000:$0.2975
  • 1000:$0.3008
  • 500:$0.3273
  • 250:$0.3609
  • 100:$0.3648
  • 25:$0.3925
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7772DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 21000
  • 3000:$0.3199
  • 6000:$0.3189
  • 12000:$0.3179
  • 18000:$0.3169
  • 30000:$0.3169
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R (Alt: SI7772DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI7772DP-T1-GE3
    DISTI # 35R6247    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35.6A,Transistor Polarity:N Channel,Continuous Drain Current Id:35.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Product Range:- RoHS Compliant: Yes0
    • 1:$0.8200
    • 25:$0.6540
    • 50:$0.5760
    • 100:$0.4970
    • 250:$0.4540
    • 500:$0.4100
    • 1000:$0.3430
    SI7772DP-T1-GE3.
    DISTI # 15AC0304    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:35.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:3.9W,No. of Pins:8Pins RoHS Compliant: Yes21000
    • 1:$0.3420
    • 3000:$0.3420
    SI7772DP-T1-GE3
    DISTI # 781-SI7772DP-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		1843
    • 1:$0.8200
    • 10:$0.6540
    • 100:$0.4970
    • 500:$0.4100
    • 1000:$0.3430
    • 3000:$0.3420
    SI7772DP-T1-GE3Vishay Siliconix 2988
      SI7772DP-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant      		Americas - Stock
        SI7772DP-T1-GE3
        DISTI # C1S803604553529        		Vishay IntertechnologiesMOSFETs
        RoHS: Compliant        		5930
        • 250:$0.3609
        • 100:$0.3648
        • 25:$0.3925
        • 10:$0.4361
        Immagine Parte # Descrizione
        SI7772DP-T1-GE3

        Mfr.#: SI7772DP-T1-GE3

        OMO.#: OMO-SI7772DP-T1-GE3

        		 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
        SI7772DP-T1-GE3

        Mfr.#: SI7772DP-T1-GE3

        OMO.#: OMO-SI7772DP-T1-GE3-VISHAY

        		 MOSFET N-CH 30V 35.6A PPAK SO-8
        Disponibilità
        Azione:
        Available
        Su ordine:
        4000
        Inserisci la quantità:
        Il prezzo attuale di SI7772DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        0,44 USD
        0,44 USD
        10
        0,42 USD
        4,19 USD
        100
        0,40 USD
        39,66 USD
        500
        0,37 USD
        187,30 USD
        1000
        0,35 USD
        352,60 USD
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