SI7772DP-T1-GE3

Mfr. #:: SI7772DP-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI7772DP-T1-GE3 Scheda dati
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HTML Datasheet:: SI7772DP-T1-GE3 Datasheet SI7772DP-T1-GE3 Datasheet (P4-P6)SI7772DP-T1-GE3 Datasheet (P7-P9)SI7772DP-T1-GE3 Datasheet (P10-P12)SI7772DP-T1-GE3 Datasheet (P13)
ECAD Model:
Maggiori informazioni:: SI7772DP-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: E

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: PowerPAK-SO-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 30 V

Id - Corrente di scarico continua:: 35.6 A

Rds On - Resistenza Drain-Source:: 13 mOhms

Vgs th - Tensione di soglia gate-source:: 1.2 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 28 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 29.8 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: TrenchFET

Confezione:: Bobina

Altezza:: 1.04 mm

Lunghezza:: 6.15 mm

Serie:: SI7

Tipo di transistor:: 1 N-Channel

Larghezza:: 5.15 mm

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 37 S

Tempo di caduta:: 10 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 18 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 15 ns

Tempo di ritardo di accensione tipico:: 16 ns

Parte # Alias:: SI7772DP-GE3

Unità di peso:: 0.017870 oz

Tags: SI77, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7772DP-T1-GE3 Descrizione

***ure Electronics: Single N-Channel 30 V 13 mOhm SMT TrenchFET Gen III Power Mosfet - PowerPAK SO-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35.6A; On Resistance Rds(On):0.0105Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes

***ment14 APAC: MOSFET,N CH,SC DIO,30V,35.6A,SO8PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):10500µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.9A; Power Dissipation Pd:3.9W; Voltage Vgs Max:20V

SI7772DP-T1-GE3 Maggiori informazioni

SkyFET® Power MOSFETs: Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI7772DP-T1-GE3 DISTI # V72:2272_09215678	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R RoHS: Compliant	5930	3000:$0.2938 1000:$0.3135 500:$0.3648 250:$0.4058 100:$0.4252 25:$0.5137 10:$0.5241 1:$0.6158
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 35.6A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8242In Stock	1000:$0.3716 500:$0.4645 100:$0.6271 10:$0.8130 1:$0.9300
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 35.6A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8242In Stock	1000:$0.3716 500:$0.4645 100:$0.6271 10:$0.8130 1:$0.9300
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 35.6A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.3270
SI7772DP-T1-GE3 DISTI # 26730596	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R RoHS: Compliant	5930	3000:$0.2975 1000:$0.3008 500:$0.3273 250:$0.3609 100:$0.3648 25:$0.3925
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7772DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 21000	3000:$0.3199 6000:$0.3189 12000:$0.3179 18000:$0.3169 30000:$0.3169
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R (Alt: SI7772DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI7772DP-T1-GE3 DISTI # 35R6247	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 35.6A,Transistor Polarity:N Channel,Continuous Drain Current Id:35.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Product Range:- RoHS Compliant: Yes	0	1:$0.8200 25:$0.6540 50:$0.5760 100:$0.4970 250:$0.4540 500:$0.4100 1000:$0.3430
SI7772DP-T1-GE3. DISTI # 15AC0304	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:35.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:3.9W,No. of Pins:8Pins RoHS Compliant: Yes	21000	1:$0.3420 3000:$0.3420
SI7772DP-T1-GE3 DISTI # 781-SI7772DP-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	1843	1:$0.8200 10:$0.6540 100:$0.4970 500:$0.4100 1000:$0.3430 3000:$0.3420
SI7772DP-T1-GE3	Vishay Siliconix		2988
SI7772DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas - Stock
SI7772DP-T1-GE3 DISTI # C1S803604553529	Vishay Intertechnologies	MOSFETs RoHS: Compliant	5930	250:$0.3609 100:$0.3648 25:$0.3925 10:$0.4361

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Disponibilità

Azione:: Available
Su ordine:: 1987
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Il prezzo attuale di SI7772DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,81 USD~~; ~~0,81 USD~~

10: ~~0,65 USD~~; ~~6,53 USD~~

100: ~~0,50 USD~~; ~~49,60 USD~~

500: ~~0,41 USD~~; ~~205,00 USD~~

1000: ~~0,33 USD~~; ~~328,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

SI77 66
SI7 1547

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SI7772DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes